Diodes-Incorporated-FCX718TA
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SOT89 PNP SILICON POWER
FCX718
(SWITCHING) TRANSISTOR
ISSSUE 1 – DECEMBER 1998
FEATURES
*
*
*
*
*
2W POWER DISSIPATION
C
6A Peak Pulse Current
Excellent H
FE
Characteristics up to 6Amps
Extremely Low Saturation Voltage E.g. 16mv Typ.
Extremely Low Equivalent On-resistance;
R
CE(sat)
96m
Ω
at 2.5A
E
C
B
Partmarking Detail –
718
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
V
A
LUE
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-20
-20
-5
V
V
Peak Pulse Current **
-6
A
Continuous Collector Current
Base Current
I
C
-2.5
-500
A
I
B
mA
Power Dissipation at T
am
b
=25°C
P
tot
1 †
2 ‡
W
W
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
†
‡
recommended P
tot
calculated using FR4 measuring 15x15x0.6mm
Maximum power dissipation is calculated assuming that the device is mounted on FR4
substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by
other suppliers.
**Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
Spice parameter data is available upon request for these devices
Refer to the handling instructions for soldering surface mount components.
FCX718
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V
(BR)CBO
MIN.
TYP.
MAX. UNIT
V
CONDITIONS.
Collector-Base
Breakdown Voltage
-20
-20
-5
-65
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
-55
V
V
I
C
=-10mA*
I
E
=-100
µ
A
V
C
B
=-15V
Emitter-Base
Breakdown Voltage
-8.8
Collector Cut-Off
Current
-100
nA
Emitter Cut-Off Current
I
EBO
-100
-100
nA
nA
V
E
B
=-4V
Collector Emitter
Cut-Off Current
I
CES
V
CES
=-15V
Collector-Emitter
Saturation Voltage
V
CE(sat)
-16
-130
-145
-40
mV
mV
mV
mV
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=-20mA*
I
C
=-1.5A, I
B
=-50mA*
I
C
=-2.5A, I
B
=-200mA*
-200
-220
-300
Base-Emitter
V
BE(sat)
V
BE(on)
-0.98
-0.85
-1.1
V
I
C
=-2.5A, I
B
=-200mA*
Saturation Voltage
Base-Emitter Turn-On
Voltage
-0.95
V
I
C
=-2.5A, V
C
E
=-2V*
Static Forward Current
h
FE
Transfer
Ratio
300
300
150
35
475
450
230
70
I
C
=-10mA, V
C
E
=-2V*
I
C
=-0.1A, V
C
E
=-2V*
I
C
=-2A, V
C
E
=-2V*
I
C
=-4A, V
C
E
=-2V*
I
C
=-6A, V
C
E
=-2V*
15
30
Transition
Frequency
f
T
150
180
MHz
I
C
=-50mA, V
C
E
=-10V
f=100MHz
Output Capacitance
Turn-On Time
C
obo
t
(on)
t
(off)
21
30
pF
ns
ns
V
C
B
=-10V, f=1MHz
V
C
C
=-15V, I
C
=-0.75A
I
B
1
=I
B
2
=15mA
40
Turn-Off Time
670
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
FCX718
TYPICAL CHARACTERISTICS
0.8
0.6
0.4
0.2
0
0.8
+25°C
IC/IB=50
0.6
-55°C
+25°C
+100°C
+150°C
IC/IB=10
IC/IB=50
IC/IB=100
0.4
0.2
0
1m
10m
100m
1
10
1m
10m
100m
1
10
I
C
– Collector Current (A)
I
C
– Collector Current (A)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
900
750
600
450
300
150
0
IC/IB=50
VCE=2V
+100°C
+25°C
0.8
0.6
04
0.2
0
-55°C
+25°C
+100°C
+150°C
-55°C
1m
10m
100m
1
10
1m
10m
100m
1
10
I
C
– Collector Current (A)
I
C
– Collector Current (A)
h
FE
v I
C
V
BE(sat)
v I
C
1.0
0.8
0.6
0.4
0.2
0
10
1
DC
1s
100ms
10ms
1ms
-55°C
+25°C
+100°C
+150°C
0.1
100
µ
s
0.01
100m
1
10
100
1m
10m
100m
1
10
I
C
– Collector Current (A)
V
CE
– Collector Emitter
V
o
ltage (V)
V
BE(on)
v I
C
Safe Operating Area
