Diodes-Incorporated-FMMT596TA
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FMMT596
SOT 23 PNP silicon planar high voltage transistor
Ordering information
Device
Reel size
(inches
T
a
pe width
(mm)
Quantity
per reel
FMMT596TA
7
8
3,000
Device marking
C
E
E
B
596
C
B
Pinout – top view
Absolute maximum ratings
Parameter
Symbol
Value
Unit
Collector-base voltage
V
V
V
I
-220
V
CBO
CEO
EBO
CM
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
-200
-5
V
V
-1
A
Continuous collector current
Base current
I
I
-0.3
A
C
-200
mA
mW
°C
B
Power dissipation at T
=25°C
P
500
amb
tot
Operating and storage temperature range
T :T
-55 to +150
j
stg
© Zetex Semiconductors plc 2007
FMMT596
Electrical characteristics (T
= 25°C)
amb
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown
voltage
V
V
V
-220
-200
-5
V
V
V
I =-100
A
(BR)CBO
(BR)CEO
(BR)EBO
C
(*)
Collector-emitter breakdown
voltage
I =-10mA
C
Emitter-base breakdown
voltage
I =-100
A
E
Collector cut-off current
Emitter cut-off current
I
I
I
-100
-100
-100
nA
nA
nA
V
V
V
=-200V
CB
CBO
EBO
CES
=-4V
EB
Collector-emitter cut-off
current
=-200V
CES
Collector-emitter saturation
voltage
V
-0.2
-0.35
V
V
I =-100mA,
I =-10mA,
C B
CE(sat)
I =-250mA,
B
(*)
I =-25mA
B
(*)
Base-emitter saturation
voltage
V
V
-1.0
-0.9
V
V
I =-250mA,
I =-25mA
BE(sat)
C
B
Base-emitter turn-on voltage
I =-250mA,
BE(on)
C
(*)
V
=-10V
CE
Static forward current
transfer ratio
h
100
100
I =-1mA,
V =-10V
C CE
FE
(*)
(*)
(*)
I =-100mA,
V =-10V
C
CE
85
35
300
10
I =-250mA,
V =-10V
C
CE
I =-400mA,
V =-10V
C
CE
T
r
ansition frequency
f
150
MHz I
=-50mA, V
=-10
V
,
T
C
CE
f=100MHz
Output capacitance
Switching times
C
pF
V
=-10V, f=1MHz
CB
obo
td
tr
ts
tf
22
19
ns I
=-200mA, V
=-80V
C
CC
I =I =-20mA
b1 b2
472
70
Switching times
td
tr
ts
tf
44
ns I
=-100mA, V
=-80V
C CC
I =I =-10mA
31
b1 b2
665
76
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
s. Duty cycle
Յ
2%.
© Zetex Semiconductors plc 2007
FMMT596
Typucal characteristics
0.4
0.4
I
C
/I
B
=10
+25°C
0.3
0.3
0.2
I
C
/I =10
I
C
/I
B
B
=50
-55°C
+25°C
+100°C
0.2
0.1
0
0.1
0
1mA
10mA
I
C
-collector current
100mA
1A
1mA
10mA
I
C
-collector current
CE(sat)
v I
C
100mA
1mA
V
CE(sat)
v I
C
V
320
1.0
0.8
V
CE
=10V
I
C
/I
B
=10
+100°C
+25°C
240
160
0.6
0.4
-55°C
+25°C
+100°C
-55°C
80
0
0.2
0
1mA
10mA
100mA
1A
1mA
10mA
100mA
1mA
I
C
-collector current
FE
v I
C
I
C
-collector current
BE(sat)
v I
C
h
V
1
V
CE
=10V
1.0
0.8
0.6
0.1
DC
1s
100ms
1ms
0.4
0.2
0
-55°C
+25°C
+100°C
0.01
100
s
0.001
1mA
10mA
I
C
-collector current
BE(on)
v I
C
100mA
1A
0.1V
1V
10V
100V
1000V
V
CE
-collector emitter voltage (V)
V
Safe operating area
© Zetex Semiconductors plc 2007
FMMT596
Package outline – SOT23
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Min. Max.
Inches
Dim.
Millimeters
Min. Max.
1.90 NOM
Inches
Min.
–
Max.
0.044
0.004
0.020
0.008
0.120
Min.
Max.
A
A1
b
–
1.12
0.10
0.50
0.20
3.04
e1
E
0.075 NOM
0.01
0.30
0.085
2.80
0.0004
0.012
0.003
0.110
2.10
2.64
1.40
0.60
0.62
–
0.083
0.047
0.104
0.055
E1
L
1.20
0.25
0.45
–
c
0.0098 0.0236
D
e
L1
–
0.018
–
0.024
–
0.95 NOM
0.037 NOM
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
© Zetex Semiconductors plc 2007
FMMT596
Definitions
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support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
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nsure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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Future device intended for production at some point. Samples may be available
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Device will be discontinued and last time buy period and delivery is in effect
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Device is still in production to support existing designs and production
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Production has been discontinued
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This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
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e
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© 2007 Published by Zetex Semiconductors plc
© Zetex Semiconductors plc 2007
