Diodes-Incorporated-HBDM60V600W-7
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HBDM60V600W
COMPLEX TRANSISTOR ARRAY FOR BIPOLAR
Features
Mechanical Data
•
•
•
Epitaxial Planar Die Construction
Lead Free By Design/RoHS Compliant (Note 1)
“Green” Device (Note 2)
•
•
Case: SOT-363
Case Material: Molded Plastic, “Green” Molding Compound.
UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminal Connections: See Schematic & Pin Configuration
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.016 grams (approximate)
•
•
•
Sub-Component P/N
MMBT2907A_DIE
MMBTA06_DIE
Reference
Device Type
PNP Transistor
NPN Transistor
Q1
Q2
•
•
•
CQ1
EQ1
EQ2
Q1
Q2
MMBT2907A
MMBTA06
BQ1
BQ2
CQ2
Top View
Device Schematic
Maximum Ratings: Total Device
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Operating and Storage Junction Temperature Range
-55 to +150
°C
V
EBO
Thermal Characteristics: Total Device
Characteristic
Power Dissipation (Note 3)
Symbol
Value
200
Unit
mW
P
D
Thermal Resistance, Junction to Ambient Air (Note 3)
625
°C/W
R
θ
JA
Maximum Ratings: Sub-Component Devices
@T
A
= 25°C unless otherwise specified
Q1-PNP Transistor
(MMBT2907A)
Q2-NPN Transistor
Characteristic
Symbol
Unit
(MMBTA06)
-60
-60
80
65
6
V
V
V
CBO
V
CEO
V
EBO
I
C
Collector-Base Voltage
Collector-Emitter Voltage
-5.5
-600
V
Emitter-Base Voltage
Collector Current – Continuous (Note 3)
500
mA
Notes:
1. No
purposefully added lead.
2. Diodes
Inc.’s “Green” policy can be found on our w
ebsite at http://www.diodes.com/products/lead_free/index.php.
3. Device
mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on page 7 or on Diodes Inc. suggested pad layout document
1 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
Electrical Characteristics: PNP (MMBT2907A) Transistor (Q1)
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Collector Cutoff Current
Base Cutoff Current
-60
-60
-5.5
⎯
⎯
⎯
V
V
V
nA
nA
nA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEX
I
BL
⎯
⎯
⎯
-10
-50
-50
I
C
= -10
μ
A, I
E
= 0
I
C
= -10mA, I
B
= 0
I
E
= -10
μ
A, I
C
= 0
V
CB
= -50V, I
E
= 0
V
CE
= -30V, V
EB(OFF)
= -0.5V
V
CE
= -30V, V
EB(OFF)
= -0.5V
ON CHARACTERISTICS (Note 4)
I
C
= -100
μ
A, V
CE
= -10V
I
C
= -1.0mA,
V
CE
= -10V
I
C
= -10mA,
V
CE
= -10V
I
C
= -150mA, V
CE
= -10V
I
C
= -500mA, V
CE
= -10V
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
I
C
= -150mA, I
B
= -15mA
I
C
= -500mA, I
B
= -50mA
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
300
⎯
100
100
100
100
50
DC Current Gain
h
FE
-0.3
-0.5
Collector-Emitter Saturation Voltage
V
V
V
CE(SAT)
V
BE(SAT)
⎯
⎯
-0.95
-1.3
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Current Gain-Bandwidth Product
V
CE
= -2.0V, I
C
= -10mA,
f = 100MHz
100
MHz
f
T
⎯
SWITCHING CHARACTERISTICS
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
45
10
40
100
80
30
ns
ns
ns
ns
ns
ns
t
on
t
d
t
r
t
off
t
s
t
r
⎯
⎯
⎯
⎯
⎯
⎯
V
CE
= -30V, I
C
= -150mA,
I
B1
= -15mA
V
CC
= -6.0V, I
C
= -150mA,
I
B1
= I
B2
= -15mA
Fall Time
Electrical Characteristics: NPN (MMBTA06) Transistor (Q2)
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector Cutoff Current
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 4)
DC Current Gain
Symbol
Min
Typ
Max
Unit
Test Condition
80
65
6
V
V
V
nA
nA
nA
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CES
I
EBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
100
100
100
I
C
= 100
μ
A, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 80V, I
E
= 0
V
CE
= 90V, V
BE
= 0
V
EB
= 5V, I
C
= 0
⎯
⎯
⎯
250
100
⎯
⎯
⎯
0.2
0.75
⎯
⎯
⎯
0.4
0.8
0.95
⎯
⎯
V
V
V
V
CE
= 1V, I
C
= 10mA
h
FE
V
CE
= 1V, I
C
= 100mA
I
C
= 100mA, I
B
= 10mA
V
CE
= 1V, I
C
= 100mA
I
C
= 100mA, I
B
= 5mA
Collector-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
V
CE(SAT)
V
BE(ON)
V
BE(SAT)
0.7
⎯
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
Current Gain-Bandwidth Product
100
MHz
f
T
⎯
⎯
Notes: 4.
Short duration pulse test used to minimize self-heating effect.
2 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
Typical Characteristics
@T
A
= 25°C unless otherwise specified
200
150
100
50
0
200
0
175
25
50
150
75 100
125
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1
Power Derating Curve
PNP (MMBT2907A) Transistor (Q1) Plots:
30
1.6
1.4
I
= 300mA
C
I
= 10mA
C
20
I
= 100mA
C
I
= 1mA
1.2
10
C
I
= 30mA
Cibo
C
1.0
0.8
5.0
0.6
0.4
Cobo
0.2
0
1.0
0.1
1
0.001
0.01
0.1
10
100
1.0
30
10
-I
B
, BASE CURRENT (mA)
Fig. 3 Typical Collector Saturation Region
REVERSE VOLTAGE (V)
Fig. 2 Typical Capacitance
0.6
1,000
V
= 5V
CE
I
I
C
B
= 10
0.5
0.4
T
= 150°C
A
100
T
= 25°C
A
0.3
T
= -50°C
T
= 150°C
A
A
T
= 25°C
0.2
0.1
0
A
10
1
T
= -50°C
A
1
10
1,000
1,000
100
1
10
-I
C
, COLLECTOR CURRENT (mA)
Fig. 5
Typical DC Current Gain vs. Collector Current
July 2008
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 4
Collector Emitter Saturation Voltage vs. Collector Current
3 of 7
HBDM60V600W
© Diodes Incorporated
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
1.0
0.9
1,000
V
= 5V
CE
T
= -50°C
A
0.8
0.7
100
0.6
T
= 25°C
A
0.5
0.4
10
1
T
= 150°C
A
0.3
0.2
0.1
1
10
100
1
10
-I
C
, COLLECTOR CURRENT (mA)
100
-I
C
, COLLECTOR CURRENT (mA)
Fig. 6
Typical Base Emitter Voltage vs. Collector Current
Fig. 7 Typical Gain Bandwidth Product vs. Collector Current
NPN (MMBTA06) Transistor (Q2) Plots
10
2.0
1.8
1.6
1.4
1
I
= 30mA
C
1.2
I
= 10mA
C
1.0
0.8
0.1
0.6
0.4
0.2
0
I
= 100mA
C
I
= 1mA
C
0.01
25
50
75
100
125
1
0.001
0.01
0.1
I
B,
BASE CURRENT (mA)
10
100
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 9 Typical Collector Saturation Region
Fig. 8
Typical Collector-Cutoff Current vs. Ambient
T
emperature
0.500
10,000
1,000
100
I
C
0.450
= 10
I
B
0.400
0.350
0.300
0.250
0.200
0.150
T
= 25°C
A
T
= 150°C
A
10
1
0.100
0.050
0
T
= -50°C
A
10
1,000
1
100
1,000
1
10
I
C
, COLLECTOR CURRENT (mA)
Fig. 10
Typical Collector Emitter Saturation Voltage vs. Collector Current
100
I
C
, COLLECTOR CURRENT (mA)
Fig. 11 Typical DC Current Gain vs. Collector Current
4 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
1.0
0.9
1,000
100
0.8
0.7
0.6
0.5
10
0.4
0.3
0.2
0.1
1
1
1
10
100
0.1
10
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 12 Typical Base Emitter Voltage vs. Collector Current
Fig. 13 Typical Gain Bandwidth Product vs. Collector Current
Current Schematic along with Application Example:
9 V – 1 2 V
3 6
R 1
H B D M 6 0 V 6 0 0 W
M M B T 2 9 0 7 A
H B D M 6 0 V 6 0 0 W
E Q 1
M M B T 2 9 0 7 A
Q 1
C 1
Q 1
D 1
D 2
R 3
R 4
Q 4
B Q 1
B Q 1
0
C Q 1
C Q 1
Q 3
H a l f
H – B r i d g e
C Q 2
H a l f
H – B r i d g e
M o t o r
C Q 2
Q 2
R 5
1 k
R 8
1 k
M M B T A 0 6
M M B T A 0 6
B Q 2
C 2
Q 2
D 4
D 3
B Q 2
E Q 2
R e v e r s e
F o r w a r d
0
Note:
D1, D2, D3, D4:
Switching Diodes (MMBD4448)
Q3, Q4:
NPN Transistors (MMBTA06)
5 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
Application Example Schematic: (with Package Pinouts)
9 V – 1 2 V
R 1
3 6
C 1
R 2
U 1
C 1
A 1
3 3 k
1
2
3
6
5
4
N C
N C
R 3
C 2
A 2
U 2
4 7 0
M M B D 4 4 4 8 D W
U 3
C Q 1
E Q 1
E Q 2
B Q 1
B Q 2
C Q 2
1
6
5
4
E Q 1
B Q 2
C Q 2
C Q 1
B Q 1
E Q 2
1
2
3
6
5
4
U 4
2
3
B Q 1
B Q 2
C Q 2
C Q 1
E Q 1
M o t o r
C 2
1
6
I N V 5 V 0 W
R 4
H B D M 6 0 V 6 0 0 W
2
5
4
E Q 2
4 7 0
3
R 5
1 k
U 5
H B D M 6 0 V 6 0 0 W
C 1
C 2
A 1
A 2
1
2
3
6
5
4
Q 1
R 6
1 k
A 3
C 3
M M B D 4 4 4 8 H T W
R e v e r s e
F o r w a r d
C o n t r o l
I n p u t
5 V / 0 V
Ordering Information
(Note 5)
Part Number
HBDM60V600W-7
Case
SOT-363
Packaging
3000/Tape & Reel
Notes:
Marking Information
HB01 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
HB01
M = Month (ex: 9 = September)
Date Code Key
Year
2006
2007
2008
2009
2010
2011
2012
2013
2014
2015
Code
T
U
V
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
6 of 7
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
HBDM60V600W
Package Outline Dimensions
A
SOT-363
Min
0.10
1.15
2.00
Dim
A
B
C
D
F
H
J
K
L
Max
0.30
1.35
2.20
B C
0.65 Typ
0.40
1.80
0
0.90
0.25
0.10
0°
0.45
2.20
0.10
1.00
0.40
0.22
8°
H
K
M
J
M
α
L
D
F
All Dimensions in mm
Suggested Pad Layout
E
E
Dimensions Value
(in mm)
Z
G
X
Y
C
E
2.5
1.3
0.42
0.6
1.9
0.65
C
G
Z
Y
X
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
7 of 7
www.diodes
.com
July 2008
© Diodes Incorporated
HBDM60V600W
Document number: DS30701 Rev. 5 – 2
