Diodes-Incorporated-MMBT5401-13-F

MMBT5401  

150V PNP SMALL SIGNAL TRANSISTOR IN SOT23  

Features  

Mechanical Data  















Epitaxial Planar Die Construction  











Case: SOT23  

Complementary NPN Type – MMBT5551  

Case Material: Molded Plasti

c, “Green”

Molding Compound  

UL Flammability Classification Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Finish

–

Matte Tin Plated Leads, Solderable per  

Ideal for Low Power Amplification and Switching  

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  

Halogen and Antimony Free. “Green” Device (Note 3)  

Qualified to AEC-Q101 Standards for High Reliability  

PPAP Capable (Note 4)  

MIL-STD-202, Method 208  

Weight: 0.008 grams (Approximate)  



C

SOT23  

B

E

Device Symbol  

Top View  

Pin-Out  

Top View  

Ordering Information

(Notes 4 & 5)  

Part Number  

MMBT5401-7-F  

MMBT5401-13-F  

MMBT5401Q-7-F  

Compliance  

AEC-Q101  

AEC-Q101  

Automotive  

Marking  

K4M  

K4M  

Reel Size (inches)  

Tape Width (mm)  

Quantity Per Reel  

3,000  

7

13  

7

8

8

8

10,000  

3,000  

K4M  

Notes:  

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.  

2. See

r more information about Diodes Incorporated’s definitions of Halogen

– and Antimony-free, “Green” and  

Lead-free.  

3.

Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm tot

al Br + Cl) and  

<1000ppm antimony compounds.  

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally  

the same, except where specified. For more information, please refer to

5. For packaging details, go to our website a

Marking Information  

K4M = Product Type Marking Code  

YM = Date Code Marking  

Y = Year (ex: F = 2018)  

M = Month (ex: 3 = March)  

Date Code Key  

Year  

2017  

2018  

2019  

2020  

2021  

2022  

2023  

2024  

2025  

2026  

Code  

E

F

G

H

I

J

K

L

M

N

Month  

Code  

Jan  

1

Feb  

2

Mar  

3

Apr  

4

May  

5

Jun  

6

Jul  

7

Aug  

8

Sep  

9

Oct  

O

Nov  

N

Dec  

D

1 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

Absolute Maximum Ratings

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-160  

-150  

-5  

Unit  

V

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

Collector Current  

V

V

-600  

mA  

Thermal Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

Symbol  

Value  

Unit  

(Note 6)  

(Note 7)  

(Note 6)  

(Note 7)  

(Note 8)  

310  

350  

403  

357  

350  

Power Dissipation  

mW  

P

D  

Thermal Resistance, Junction to Ambient  

R

θ

JA  



C/W

  

Thermal Resistance, Junction to Leads  

R

θ

JL  



C/W

  



C  

Operating and Storage Temperature Range  

-55 to +150  

T

J,

T

STG  

ESD Ratings

(Note 9)  

Characteristic  

Electrostatic Discharge – Human Body Model  

Electrostatic Discharge – Machine Model  

Symbol  

ESD HBM  

ESD MM  

Value  

4,000  

400  

Unit  

V

V

JEDEC Class  

3A  

C

Notes:  

6. For a device mounted on minimum recommended pad layout 1oz copper that is on a single-sided FR-4 PCB; device is measured under still air  

conditions whilst operating in a steady-state.  

7. Same as note (6), except the device is mounted on 15 mm x 15mm 1oz copper.  

8. Thermal resistance from junction to solder-point (at the end of the leads).  

9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.  

2 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

Thermal Characteristics and Derating Information  

0.4  

0.3  

0.2  

0.1  

0.0  

400  

350  

300  

250  

200  

150  

100  

50  

D=0.5  

D=0.2  

D=0.1  

Single Pulse  

D=0.05  

10  

0

0

25  

50  

75  

100 125 150  

100μ

1m 10m

 

100m  

1

100  

1k  

Temperature (

o

C)  

Pulse Width (s)  

Transient Thermal Impedance  

Derating Curve  

10  

Single Pulse. T

A

=25

o

C  

1

0.1  

10m  

100m  

1

10  

100  

1k  

Pulse Width (s)  

Pulse Power Dissipation  

3 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

Characteristic  

OFF CHARACTERISTICS (Note 10)  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Emitter-Base Breakdown Voltage  

Symbol  

Min  

Max  

Unit  

Test Condition  

I

C

= -100

μ

A, I

E

= 0  

I

C

= -1mA, I

B

= 0  

I

E

= -100

μ

A, I

C

= 0  

-160  

-150  

-5  

V

V

V







BV

CBO  

BV

CEO  

BV

EBO  

-50  

-50  

nA  

μ

A  

V

CB

= -120V, I

E

= 0  

V

CB

= -120V, I

E

= 0, T

A

= +100°C  

V

EB

= -4V, I

C

= 0  

Collector Cutoff Current  





I

CBO  

I

EBO  

Emitter Cutoff Current  

-50  

nA  

ON CHARACTERISTICS (Note 10)  

I

C

= -1mA, V

CE

= -5V  

I

C

= -10mA, V

CE

= -5V  

I

C

= -50mA, V

CE

= -5V  

I

C

= -10mA, I

B

= -1mA  

I

C

= -50mA, I

B

= -5mA  

I

C

= -10mA, I

B

= -1mA  

I

C

= -50mA, I

B

= -5mA  

50  

60  

50  



240  



DC Current Gain  



h

FE  

-0.2  

-0.5  

Collector-Emitter Saturation Voltage  

Base-Emitter Saturation Voltage  

V

V





V

CE(SAT)  

V

BE(SAT)  

-1  

SMALL SIGNAL CHARACTERISTICS  

Output Capacitance  

6

pF  



C

obo  

h

fe  

V

CB

= -10V, f = 1MHz, I

E

= 0  

V

CE

= -10V, I

C

= -1mA,  

f = 1kHz  

V

CE

= -10V, I

C

= -10mA,  

f = 100MHz  

V

CE

= -5V, I

C

= -200

μ

A,  

R

S

= 10

Ω



f = 1kHz  

Small Signal Current Gain  

Current Gain-Bandwidth Product  

Noise Figure  

40  

260  



100  

300  

8.0  

MHz  

dB  

f

T  

NF  



Notes:  

10.

Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%

.  

4 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

Typical Electrical Characteristics

(@T

A

= +25°C, unless otherwise specified.)  

10,000  

1,000  

100  

10.0  

I

I

C

B

V

= 5V  

= 10  

CE  

R

E

T

T

)

N

V

(

I

A

I

E

M

G

1.0  

T

= 150°C  

G

A

E

T

A

–

R T  

N

E

R

R

U

C

L

O

T

O

T

= 150°C  

V

A

C

E

N

L

O

L

I

O

C

T

A

R

U

D

C

0.1  

T

= 25°C  

,

,

E

)

A

T

h

F  

A

T

= -50°C  

A

10  

1

A

(

E

S

T

= -50°C  

A

V

C  

T

= 25°C  

A

0.01  

10  

100  

1

1,000  

10  

100  

1

1,000  

I

C

, COLLECTOR CURRENT (mA)  

I

C

, COLLECTOR CURRENT (mA)  

Fig. 1 Typical DC Current Gain vs. Collector Current  

Fig. 2 Typical Collector-Emitter Saturation Voltage  

vs. Collector Current  

1,000  

100  

)

1.0  

0.9  

0.8  

V

(

V

= 10V  

CE  

V

= 5V  

E

CE  

G

A

T

L

T

= -50°C  

A

O

V

N

O

0.7  

0.6  

0.5  

–

N

R

U

T

T

= 25°C  

A

R

E

T

T

I

M

0.4  

0.3  

10  

E

T

= 150°C  

A

–

E

S

A

B

,

)

N

0.2  

0.1  

O

(

E

V

B  

1

0.1  

1.0  

10  

100  

10  

I

C

, COLLECTOR CURRENT (mA)  

Fig. 5

Typical Gain-Bandwidth Product vs. Collector Current  

1

100  

I

C

, COLLECTOR CURRENT (mA)  

Fig.4  

Fig. 3 Typical Base-Emitter Turn-On Voltage  

vs. Collector Current  

5 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

Package Outline Dimensions  

Please see

r the latest version.  

SOT23  

All 7°  

H

SOT23  

GAUGE PLANE  

0.25  

Dim  

A

B

C

D

F

G

H

Min  

Max  

0.51  

1.40  

2.50  

1.03 0.915  

0.60 0.535  

Typ  

0.40  

1.30  

2.40  

J

0.37  

1.20  

2.30  

0.89  

0.45  

1.78  

2.80  

K

K1  

a

M

A

L

L1  

2.05  

3.00  

1.83  

2.90  

0.05  

J

0.013 0.10  

K

K1  

L

L1  

M

a

0.890 1.00 0.975  

0.903 1.10 1.025  

C

B

0.45  

0.25  

0.61  

0.55  

0.55  

0.40  

0.085 0.150 0.110  

0° 8°

 

—  

D

All Dimensions in mm  

G

F

Suggested Pad Layout  

Please see

r the latest version.  

SOT23  

Y

Dimensions Value

 

(in mm)  

C

X

2.0  

0.8  

Y1  

C

X1  

Y

1.35  

0.9  

Y1  

2.9  

X

X1  

Note:  

For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between  

device terminals and PCB tracking.  

6 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2  

MMBT5401  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume  

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  

website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings  

noted herein may also be covered by one or more United States, international or foreign trademarks.  

This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the  

final and determinative format released by Diodes Incorporated.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body, or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  

failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its  

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  

Copyright © 2018, Diodes Incorporated  

7 of 7  

May 2018  

© Diodes Incorporated  

MMBT5401  

Document number: DS30057 Rev. 11 – 2