Diodes-Incorporated-MMDT3904Q-7-F
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MMDT3904
40V DUAL NPN SMALL SIGNAL TRANSISTOR IN SOT363
Features
Mechanical Data
Epitaxial Planar Die Construction
Case: SOT363
Ideal for Medium Power Amplification and Switching
Ultra-Small Surface Mount Package
Case Material: Molded Pla
stic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Finish; Solderable per MIL-STD-
202, Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.006 grams (Approximate)
SOT363
Device Schematic
Top View
Top View
Ordering Information
(Note 4)
Status
Compliance
Product
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
Active
AEC-Q101
MMDT3904-7-F
K6N
7
8
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SOT363
K6N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: D = 2016)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Aug
Sep
Oct
Nov
Dec
Month
Code
Jan
Feb
Mar
Apr
May
Jun
Jul
8
9
O
N
D
1
2
3
4
5
6
7
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
MMDT3904
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
40
V
6.0
V
200
mA
Thermal Characteristics
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
Value
200
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage and Temperature Range
625
R
θ
JA
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 6)
Characteristic
Symbol
Value
Unit
JEDEC Class
3A
Electrostatic Discharge – Human Body Model
ESD HBM
4,000
V
C
Electrostatic Discharge – Machine Model
ESD MM
400
V
Notes:
5. For the device mounted on minimum recommended pad layout FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
Thermal Characteristic and Derating Information
200
150
100
50
0
200
0
175
25
50
150
100 125
75
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 1, Power Dissipation vs.
Ambient
T
emperature (
T
o
tal Device)
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
MMDT3904
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 7)
Emitter-Base Breakdown Voltage
Collector-Base Cut-Off Current
Symbol
Min
Max
Unit
Test Condition
I
C
= 100µA, I
E
= 0
60
40
V
V
50
50
50
50
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
C
= 10.0mA, I
B
= 0
I
E
= 100µA, I
C
= 0
V
CB
= 50V
6.0
V
nA
V
CE
= 40V, V
BE(OFF)
= 3.0V
V
CE
= 40V, V
BE(ON)
= 0.25V
V
EB
= 5V
Collector-Emitter Cut-Off Current
nA
nA
I
CEV
I
EBO
Emitter-Base Cut-Off Current
ON CHARACTERISTICS
(Note 7)
I
C
= 100µA, V
CE
= 1.0V
I
C
= 1.0mA, V
CE
= 1.0V
I
C
= 10mA, V
CE
= 1.0V
I
C
= 50mA, V
CE
= 1.0V
I
C
= 100mA, V
CE
= 1.0V
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
I
C
= 10mA, I
B
= 1.0mA
I
C
= 50mA, I
B
= 5.0mA
40
70
100
60
DC Current Gain
300
h
FE
30
0.20
0.30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
CE(sat)
V
BE(sat)
0.65
0.85
0.95
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
4.0
8.0
10
pF
pF
C
obo
C
ibo
h
ie
1.0
0.5
100
1.0
V
CB
= 5.0V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Capacitance
Input Impedance
k
Ω
x 10
-4
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
8.0
400
40
h
re
V
CE
= 10V, I
C
= 1.0mA,
f = 1.0kHz
h
fe
µS
h
oe
V
CE
= 20V, I
C
= 10mA,
f = 100MHz
V
CE
= 5.0V, I
C
= 100
μ
A,
R
S
= 1.0k
Ω
f = 1.0kHz
Current Gain-Bandwidth Product
Noise Figure
300
MHz
dB
f
T
NF
5.0
SWITCHING CHARACTERISTICS
Delay Time
35
35
ns
ns
ns
ns
t
d
t
r
V
CC
= 3.0V, I
C
= 10mA,
V
BE(off)
= – 0.5V, I
B1
= 1.0mA
Rise Time
Storage Time
200
50
t
s
t
f
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Fall Time
Note:
7.
Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%
.
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
MMDT3904
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
10
15
10
1
5
0
0.1
1
10
0.1
1
10
1,000
0.1
100
100
I
C
, COLLECTOR CURRENT (mA)
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Fig. 5, Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 2, Input and Output Capacitance vs.
Collector-Base Voltage
1,000
1
100
0.1
10
1
0.01
1
0.1
1
10
100
1,000
1,000
10
0.1
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Fig. 3, Typical DC Current Gain
vs. Collector Current
Fig. 4, Typical Collector-Emitter
Saturation Voltage vs. Collector Current
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
MMDT3904
Package Outline Dimensions
SOT363
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
1.00
0.25
0.11
2.15
2.10
1.30
E
E1
b
c
D
E
0.10 0.30
0.10 0.22
1.80 2.20
2.00 2.20
F
b
E1
1.15 1.35
e
F
L
a
0.650 BSC
0.40 0.45
0.425
D
0.25 0.40
0° 8°
0.30
—
All Dimensions in mm
A2
c
a
L
e
A1
Suggested Pad Layout
C
Value
Dimensions
(in mm)
C
G
X
Y
Y1
0.650
1.300
0.420
0.600
2.500
Y1
G
Y
X
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
MMDT3904
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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April 2016
© Diodes Incorporated
MMDT3904
Document number: DS30088 Rev. 18 – 2
