Diodes-Incorporated-MMST3904Q-7-F
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MMST3904Q
40V NPN SMALL SIGNAL TRANSISTOR IN SOT323
Features
Mechanical Data
BV
CEO
> 40V
Case: SOT323
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
I
C
= 200mA Collector Current
Epitaxial Planar Die Construction
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Plated Leads, Solderable per
Ultra-Small Surface Mount Package
Complementary PNP Type: MMST3906Q
e3
MIL-STD-202, Method 208
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
The MMST3904Q is suitable for automotive applications
requiring specific change control; it is AEC-Q101 qualified,
PPAP capable, and manufactured in IATF 16949 certified
facilities.
Weight: 0.006 grams (Approximate)
C
SOT323
B
E
Pin-out Top View
Top View
Device Symbol
Ordering Information
(Note 4)
Part Number
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
MMST3904Q-7-F
Automotive
K2N
7
8
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See
https://www.diodes.com/quality/lead-
free/ fo
r more information about Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green” and
Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website a
t https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
K2N = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: G = 2019)
M or M = Month (ex: 9 = September)
Date Code Key
Year
2018
2019
2020
2021
2022
2023
2024
2025
2026
2027
2028
Code
F
G
H
I
J
K
L
M
N
O
P
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
Absolute Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
V
CBO
V
CEO
V
EBO
I
C
Value
60
40
6
200
Unit
V
V
V
mA
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
R
Value
200
Unit
mW
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 5)
Operating and Storage Temperature Range
625
JA
-55 to +150
T
J
, T
STG
ESD Ratings
(Note 6)
Characteristic
Electrostatic Discharge – Human Body Model
Electrostatic Discharge – Machine Model
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
JEDEC Class
3A
C
V
Notes:
5. For a device mounted with the collector lead on minimum recommended pad layout 1oz copper that is on a single-sided 1.6mm FR-4 PCB; device is
measured under still air conditions whilst operating in a steady-state.
6. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
Thermal Characteristics and Derating Information
400
350
300
250
200
150
100
50
0
0
25
50
75 100 125 150 175 200
T
A
, AMBIENT TEMPERATURE (°C)
M
a
x Power Dissipation vs.
Ambient Temperature
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Symbol
Min
Max
Unit
Test Condition
I
C
= 10µA, I
E
= 0
I
C
= 1mA, I
B
= 0
I
E
= 10µA, I
C
= 0
60
40
5
V
V
V
nA
nA
50
50
BV
CBO
BV
CEO
BV
EBO
I
CEX
V
CE
= 30V, V
EB(OFF)
= 3V
V
CE
= 30V, V
EB(OFF)
= 3V
Base Cutoff Current
I
BL
ON CHARACTERISTICS (Note 7)
I
C
= 100µA, V
CE
= 1V
I
C
= 1mA, V
CE
= 1V
I
C
= 10mA, V
CE
= 1V
I
C
= 50mA, V
CE
= 1V
I
C
= 100mA, V
CE
= 1V
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
40
70
100
60
DC Current Gain
300
h
FE
30
0.25
0.30
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
V
V
V
CE(sat)
V
BE(sat)
0.65
0.85
0.95
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Input Capacitance
4
8
10
8.0
400
40
pF
pF
C
obo
C
ibo
h
ie
h
re
h
fe
1
0.5
100
1
V
CB
= 5V, f = 1.0MHz, I
E
= 0
V
EB
= 0.5V, f = 1.0MHz, I
C
= 0
Input Impedance
k
Ω
Voltage Feedback Ratio
Small Signal Current Gain
Output Admittance
x 10
-4
V
CE
= 10V, I
C
= 1
m
A,
f = 1.0MHz
µS
h
oe
V
CE
= 20V, I
C
= 10
m
A,
f = 100MHz
V
CC
= 5V, I
C
= 100
A,
R
S
= 1k
Ω
, f = 1MHz
Current Gain-Bandwidth Product
Noise Figure
300
MHz
dB
f
T
NF
5
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
35
35
200
50
ns
ns
ns
ns
t
d
t
r
t
s
t
f
V
CC
= 3V, I
C
= 10mA,
V
BE(OFF)
= -0.5V, I
B1
= 1mA
V
CC
= 3.0V, I
C
= 10mA,
I
B1
= I
B2
= 1.0mA
Notes:
7. Measured under pulsed conditions. Pul
se width ≤ 300µs. Duty cycle ≤ 2%
.
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
10
15
I
C
I
B
f = 1MHz
= 10
10
1
5
0
Cibo
Cobo
0.1
1,000
100
1
0.1
10
100
0.1
1
10
100
1,000
I
C
, COLLECTOR CURRENT (mA)
T
y
pical Base-Emitter
V
CB
, COLLECTOR-BASE VOLTAGE (V)
Input and Output Capacitance vs.
Collector-Base Voltage
Saturation Voltage vs. Collector Current
1
I
C
= 10
I
B
T
A
= 125°C
T
A
= +
2
5°C
T
A
= -25°C
0.1
10
1
V
CE
= 1
.
0
V
0.01
0.1
1
10
100
1,000
1
1,000
0.1
10
100
I
C
, COLLECTOR CURRENT (mA)
T
y
pical Collector-Emitter
I
C
, COLLECTOR CURRENT (mA)
T
y
pical DC Current Gain vs. Collector Current
Saturation Voltage vs. Collector Current
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
Package Outline Dimensions
SOT323
D
SOT323
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
0.95
0.30
0.11
2.15
2.10
1.30
A2
b
c
D
E
0.25 0.40
0.10 0.18
1.80 2.20
2.00 2.20
c
a
A1
e
L
b
E1
1.15 1.35
e
0.650 BSC
e1
1.20 1.40
1.30
F
L
a
0.375 0.475
0.425
0.25 0.40
0° 8°
0.30
—
All Dimensions in mm
E
E1
F
e1
Suggested Pad Layout
SOT323
X
Y
Value
Dimensions
(in mm)
0.650
1.300
0.470
0.600
2.500
C
G
X
Y
Y1
Y1
G
C
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
MMST3904Q
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2019, Diodes Incorporated
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October 2019
© Diodes Incorporated
MMST3904Q
Document number: DSD42267
Rev. 1 – 2
