Diodes-Incorporated-S08U50600A

Part #Diodes-Incorporated-S08U50600A
Download 
Diodes-Incorporated-S08U50600A
S08xxA SERIES(LS)  
Sensitive Gate Sillicon Controlled Rectifiers  
Reverse Blocking Thyristors  
SCRs  
0.8 AMPERES RMA 600 VOLTS  
FEATURES  
TO-92 (TO-226AA)  
•
Sensitive Gate Allows Triggering by Microcontrollers and Other  
Logic Circuits  
•
Blocking Voltage to 600 Volts  
TO-92  
•
On-State Current Rating of 0.8 Amperes RMS at 80
°
C  
Dim.  
A
Min.  
4.45  
4.32  
3.18  
1.15  
2.42  
12.7  
2.04  
3.43  
Max.  
4.70  
5.33  
4.19  
1.39  
2.66  
—  
•
High Surge Current Capability
—
10 Amperes  
•
Minimum and Maximum Values of IGT, VGT and IH Specified  
for Ease of Design  
B
C
D
•
Immunity to dV/dt
 
—
20 V/us Minimum at T

J

=110
°
C  
E
•
Glass-Passivated Surface for Reliability and Uniformity  
•
Pb-Free Package  
TO-92  
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
•
Available in
“
Green
”
Package:
TO-92  
•
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)  
• Halogen and Antimony Free. “Green” Device (Note 3)  
F
G
I
2.66  
—  
All Dimensions in  
millimeter  
PIN ASSIGNMENT  
Cathode  
1
2
3
Gate  
Anode  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25
℃
ambient temperature unless otherwise specified.  
CHARACTERISTICS  
SYMBOL  
VALUE  
UNIT  
Peak Repetitive Off
–
State Voltage (TJ= -40 to 110
°
C, Sine Wave, 50 to 60 Hz; Gate Open)  
V

DMS  

V

RRM  

600  
V
S08U25600A  
S08U50600A  
S08M02600A  
On-State RMS Current (TC = 80
°
C) 180° Conduction Angles  
Peak Non-Repetitive Surge Current (1/2 Cycle, Sine Wave, 60 Hz, T

J

= 25
°
C)  
Circuit Fusing Consideration (t = 8.3 ms)  
I

T(RMS)  

I

TSM  

0.8  
10  
A
A
I

2

t  
0.415  
0.1  
A

2

s  
W
W
A
P

GM  

P

GM(AV)  

I

GM  

Forward Peak Gate Power (TA = 25
℃
, Pulse Width 1.0 us)  
Forward Average Gate Power (TA = 25
℃
, t = 8.3 ms)  
Forward Peak Gate Current (TA = 25
℃
, Pulse Width
≦
1.0 us)  
Reverse Peak Gate Voltage (TA = 25
℃
, Pulse Width
≦
1.0 ms)  
Operating temperature range @ Rate V

RRM

and V

DRM  

Storage temperature range  
0.01  
1.0  
V

GRM  

T

J  

5
V
-40 to +110  
-40 to +150  
°C  
°C  
T

STG  

Note :  
1. EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. All applicable RoHS exemptions applied.  
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony  
compounds.  
4. V

DRM

and V

RRM

for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with  
negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.  
1 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2  

R
A
T
ING AND CHARACTERISTIC CURVES  
S08xxA SERIES  
THERMAL CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
VALUE  
UNIT  
°C /W  
°C  
Thermal Resistance – Junction to Case  
– Junction to Ambient  
RthJC  
RthJA  
75  
150  
Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for 10 Seconds  
T

L  

260  
ELECTRICAL CHARACTERISTICS
(T

J

= 25°C unless otherwise noted)  
OFF CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
MAX  
UNIT  
µA  
T

J

= 25
℃  
Peak Repetitive Forward or Reverse Blocking Current  
(VD=Rated VDRM and VRRM; RGK =1K Ohms)  
I

DRM  

I

RRM  

10  
100  
T

J

= 110
℃  
Maximum Lead Temperature for Soldering Purposes 1/16″ from Case for 10 Seconds  
T

L  

260  
°C  
ON CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
MAX  
UNIT  
Peak Forward On-State Voltage  
1.7  
V
V

TM  

(ITM= ± 1.6A Peak, Pulse Width
≦
1.0ms, Duty Cycle
≦
1%)  
25  
50  
S08U25600A  
S08U50600A  
S08M02600A  
Gate Trigger Current(VD= 7.0 Vdc,RL=100 Ohms) (1)  
Holding Current(VD= 7.0 Vdc, Intitiating Current = 20mA  
Gate Trigger Voltage(VD= 7.0 Vdc,RL=100 Ohms) (1)  
Latch Current(VD= 7.0 Vdc, RL 100 Ohms)  
I

GT  

µA  
mA  
V
200  
T

J

= 25
℃  
T

J

= -40
℃  
5
10  
I

H  

T

J

= 25
℃  
T

J

=-40
℃  
10  
V

GT  

100  
T

J

= 25
℃  
T

J

= -40
℃  
10  
I

L  

mA  
100  
DANAMIC CHARACTERISTICS  
CHARACTERISTICS  
SYMBOL  
MIN.  
UNIT  
Critical Rate of Rise of Off-State Voltage  
T

J

= 110
℃  
dv/dt  
20  
V/us  
(V

D

=Rated V

DRM

,Exponential Waveform, PGK=1K Ohms, TJ=110
℃
)  
(1) RGK current is not included in measurement  
2 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2  

R
A
T
ING AND CHARACTERISTIC CURVES  
S08xxA SERIES  
10  
1
0.1  
0
1
2
3
4
5
6
V

T

, INSTANTANEOUS FORWARD VOLTAGE (V)  
FIG.1- ON-STATE CHARACTERISTICS  
3 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2  

R
A
T
ING AND CHARACTERISTIC CURVES  
S08xxA SERIES  
2.5  
0.8  
0.7  
0.6  
0.5  
0.4  
2
1.5  
1
0.5  
0
-40  
-40  
0
-20  
0
20  
40  
60  
80  
100  
-40  
-40  
0
-20  
0
20  
40  
60  
80  
100  
T

J

JUNCTION TEMPERATURE, (°C)  
FIG.2- I

GT

(TJ) / I

GT

(25°C) VERSUS T

J  

T

J

JUNCTION TEMPERATURE, (°C)  
FIG.3- TYPICAL V

GT

VERSUS T

J  

1
0.8  
0.6  
0.4  
0.2  
0
1
0.8  
0.6  
0.4  
0.2  
0
-20  
0
20  
40  
60  
80  
100  
-20  
0
20  
40  
60  
80  
100  
T

J

JUNCTION TEMPERATURE, (°C)  
T

J

JUNCTION TEMPERATURE, (°C)  
FIG.4- TYPICAL I

H

VERSUS T

J  

FIG.5- TYPICAL I

L

VERSUS T

J  

1
0.8  
0.6  
0.4  
0.2  
0
1
0.8  
0.6  
0.4  
0.2  
0
T

J

= 25
°
C  
T

J

= 125
°
C  
20  
40  
60  
80  
100  
120  
0.2  
0.4  
0.6  
0.8  
T

C

CASE TEMPERATURE, (°C)  
FIG.6- ON-STATE CURRENT DERATING CURVE  
IT

(AV)

AVERAGE ON-STATE CURRENT, (A)  
FIG.7- POWERE DISSIPATION VERSUS I

T  

4 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2  

Ordering Information :  
Packing  
Part Number  
Package  
Qty.  
Carrier  
S08U50600A  
TO-92  
2000pcs  
2000pcs  
1000pcs  
2000pcs  
Reel  
S08M02600A  
TO-92  
TO-92  
TO-92  
Reel  
Bulk  
Reel  
S08M02600A-BU  
S08M02600A_HF  
Marking Information :  
5 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2  

IMPORTANT NOTICE  
1.  
DIODES INCORPORATED (Diodes) AND ITS SUBSIDIARIES MAKE NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH  
REGARDS TO ANY INFORMATION CONTAINED IN THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF  
MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
2.  
The Information contained herein is for informational purpose only and is provided only to illustrate the operation
of Diodes’ products described  
herein and application examples. Diodes does not assume any liability arising out of the application or use of this document or any product described herein.  
This document is intended for skilled and technically trained engin
eering customers and users who design with Diodes’ products. Diodes’ products may be  
used to facilitate safety-related applications; however, in all instances customers and users are responsible for (a) selecting the appropriate Diodes products  
for their a
pplications, (b) evaluating the suitability of Diodes’ products for their intended applications, (c) ensuring their applications, which incorporate Diodes’  
products, comply the applicable legal and regulatory requirements as well as safety and functional-safety related standards, and (d) ensuring they design  
with appropriate safeguards (including testing, validation, quality control techniques, redundancy, malfunction prevention, and appropriate treatment for  
aging degradation) to minimize the risks associated with their applications.  
3.  
Diodes assumes no liability for any application-related information, support, assistance or feedback that may be provided by Diodes from time to  
time. Any customer or user of this document or products described herein will assume all risks and liabilities associated with such use, and will hold Diodes  
and all companies whose products are represented herein or on Diodes’ websites, harmless against all damages and liabilities.  
4.  
Products described herein may be covered by one or more United States, international or foreign patents and pending patent applications. Product  
names and markings noted herein may also be covered by one or more United States, international or foreign trademarks and trademark applications.  
Diodes does not convey any license under any of its intellectual property rights or the rights of any third parties (including third parties whose products and  
services may be described in this document or on Diodes’ webs
ite) under this document.  
5.  
Diodes’  
products  
are  
provided  
subject  
to  
Diodes’  
Standard  
Terms  
and  
Conditions  
of  
Sale  

(

or other applicable terms. This document does not alter or  
expand the applicable warranties provided by Diodes. Diodes does not warrant or accept any liability whatsoever in respect of any products purchased  
through unauthorized sales channel.  
6.  
Diodes’ products and technology may not be used for or incorporated into any products or systems whose manufacture, use or sa
le is prohibited  
under any applicable laws and regulations. Should customers o
r users use Diodes’ products in contravention of any applicable laws or regulations, or for  
any unintended or unauthorized application, customers and users will (a) be solely responsible for any damages, losses or penalties arising in connection  
therewith or as a result thereof, and (b) indemnify and hold Diodes and its representatives and agents harmless against any and all claims, damages,  
expenses, and attorney fees arising out of, directly or indirectly, any claim relating to any noncompliance with the applicable laws and regulations, as well  
as any unintended or unauthorized application.  
7.  
While efforts have been made to ensure the information contained in this document is accurate, complete and current, it may contain technical  
inaccuracies, omissions and typographical errors. Diodes does not warrant that information contained in this document is error-free and Diodes is under no  
obligation to update or otherwise correct this information. Notwithstanding the foregoing, Diodes reserves the right to make modifications, enhancements,  
improvements, corrections or other changes without further notice to this document and any product described herein. This document is written in English  
but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by  
Diodes.  
8.  
Any unauthorized copying, modification, distribution, transmission, display or other use of this document (or any portion hereof) is prohibited.  
Diodes assumes no responsibility for any losses incurred by the customers or users or any third parties arising from any such unauthorized use.  
9. This Notice may be periodically updated with the most recent version available at

DIODES is a trademark of Diodes Incorporated in the United States and other countries.  
The Diodes logo is a registered trademark of Diodes Incorporated in the United States and other countries.  
© 2022 Diodes Incorporated. All Rights Reserved.  
6 of 6  
July 2022  
S08xxA SERIES(LS)  
© 2022 Copyright Diodes Incorporated. All Rights Reserved.  
Document number: DS43874 Rev. 5 – 2