Diodes-Incorporated-UMC4N-7
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UMC4N
DUAL COMPLEMENTARY PRE-BIASED TRANSISTORS
Features
Mechanical Data
Ultra-Small Surface Mount Package
Epitaxial Planar Die Construction
Case: SOT353
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity:
Level 1 per J-STD-020
Terminals: Finish
Matte Tin Finish. Solderable per MIL-STD-
202, Method 208
e3
Surface Mount Package Suited for Automated Assembly
Simplifies Circuit Design and Reduces Board Space
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Weight: 0.006 grams (Approximate)
An Automotive-Compliant Part is Available Under Separate
SOT353
(1)
Q
(3)
(2)
R1
Q
1
R
1
= 47k
R
2
= 47k
1
5
3
4
2
R2
R2
Q
1
2
Q
2
R
1
= 10k
R
2
= 47k
R1
(4)
(5)
Device Schematic
Top View
Bottom View
Package Pin Out
Configuration
Ordering Information
(Note 4)
Part Number
UMC4N
-7
Compliance
AEC-Q101
Marking
NP1
Reel Size (inch)
Tape Width (mm)
Quantity per Reel
7
8
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information abo
ut Diodes Incorporated’s definitions of Halogen
– and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
NP1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: E = 2017)
NP1
M = Month (ex: 9 = September)
Date Code Key
Year
2017
2018
2019
2020
2021
2022
2023
2024
Code
E
F
G
H
I
J
K
L
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
1 of 6
February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
UMC4N
Absolute Maximum Ratings, Pre-Biased NPN Transistor, Q
1
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
V
CC
V
IN
Value
50
Unit
V
Supply Voltage
Input Voltage
-10 to +40
30
V
Output Current
Collector Current
mA
mA
I
O
100
I
C
Absolute Maximum Ratings, Pre-Biased PNP Transistor, Q
2
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
V
CC
V
IN
Value
-50
Unit
V
Supply Voltage
Input Voltage
-40 to +6
-100
V
Output Current
Collector Current
mA
mA
I
O
-100
I
C
Thermal Characteristics
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Symbol
P
D
R
Value
150
Unit
mW
C/W
C
Thermal Resistance, Junction to Ambient Air (Note 5)
Operating and Storage Temperature Range
833
JA
-55 to +150
T
J
, T
STG
Note:
5. For the device mounted on minimum recommended pad layout FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device
is measured when operating in a steady-state condition.
Electrical Characteristics, Pre-Biased NPN Transistor, Q
1
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
V
I(OFF)
V
I(ON)
V
O(ON)
I
I
Min
0.5
Typ
Max
3
Unit
V
Test Condition
V
CC
= 5V, I
O
= 100
A
V
O
= 0.3V, I
O
= 2mA
(Note 6)
(Note 7)
Input Voltage
V
Output Voltage
Input Current
0.1
0.3
0.18
0.5
V
I
O
/ I
I
= 10mA/0.5 mA
mA
A
V
I
= 5V
Output Current
DC Current Gain
68
I
O(OFF)
G
I
V
CC
= 50V, V
I
= 0V
V
O
= 5V, I
O
= 5mA
Gain-Bandwidth Product (Note 8)
Input Resistance
250
47
1
MHz
k
32.9
61.1
f
T
V
CE
= 10V, I
E
= -5mA, f = 100MHz
R
1
Resistance Ratio
0.8
1.2
R
2
/R
1
Notes:
6
. The device is guaranteed to be in “OFF” state with
V
I(OFF)
up to 0.5V.
7.
The device is guaranteed to be in “ON” state with
V
I(ON)
starting from 3V.
8. Characteristic of Transistor
–
for reference only.
Electrical Characteristics, Pre-Biased PNP Transistor, Q
2
(@T
A
= +25°C unless otherwise specified.)
Characteristic
Symbol
V
I(OFF)
V
I(ON)
V
O(ON)
I
I
Min
-0.3
Typ
Max
Unit
V
Test Condition
V
CC
= -5V, I
O
= -100
A
V
O
= -0.3V, I
O
= -1mA
I
O
/ I
I
= -5mA/-0.25 mA
V
I
= -5V
(Note 9)
Input Voltage
(Note 10)
-1.4
-0.3
-0.88
-0.5
V
Output Voltage
Input Current
-0.1
V
mA
A
MHz
k
250
Output Current
DC Current Gain
68
I
O(OFF)
G
I
V
CC
= -50V, V
I
= 0V
V
O
= -5V, I
O
= -5mA
V
CE
= -10V, I
E
= 5mA, f = 100MHz
Gain-Bandwidth Product (Note 11)
Input Resistance
7
13
f
T
10
R
1
Resistance Ratio
3.7
4.7
5.7
R
2
/R
1
Notes:
9
. The device is guaranteed to be in “OFF” state with
V
I(OFF)
up to -0.3V.
10.
The device is guaranteed to be in “ON” state with
V
I(ON)
starting from -1.4V.
11. Characteristic of Transistor
–
for reference only.
2 of 6
February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
UMC4N
Typical Electrical Characteristics
(@T
A
= +25°C unless otherwise specified.)
1,000
I
/I =
20
I
O
100
T
= 150°C
A
T
= 85°C
A
T
= 150°C
A
T
= 85°C
A
10
1
T
= 25°C
A
T
= 25°C
A
T
= -55°C
A
T
= -55°C
A
V
= 5V
O
0.1
1
10
100
I
O
, OUTPUT CURRENT (mA)
Fig. 1 Typical DC Current Gain vs. Output Current (Q1, NPN)
10
10
V
= 5V
CC
T
= -55°C
= 25°C
T
= -55°C
A
A
1
1
T
T
T
= 25°C
= 85°C
A
A
A
A
T
= 85°C
T
= 150°C
T
= 150°C
A
A
V
O
= 0.3V
0.1
0.01
0.1
0.01
0.1
1
10
0.1
1
10
100
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February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
UMC4N
Typical Electrical Characteristics
(Cont.) (@T
A
= +25°C unless otherwise specified.)
1
I
/I =
20
O
I
T =
150°C
A
T =
85°C
A
0.1
T
= 150°C
A
T
= 85°C
A
T
= 25°C
A
T
= 25°C
A
T
= -55°C
T
= -55°C
A
A
V
= -5V
O
0.01
10
0.1
1
10
100
-I
O
, OUTPUT CURRENT (mA)
Fig. 6 Typical Output Voltage
vs. Output Current (Q2, PNP)
10
V
= -5V
CC
V
O
= -0.3V
1
1
T
A
= -55°C
= 25°C
= 85°C
T
= -55°C
= 25°C
A
T
A
T
A
A
T
A
T
= 85°C
T
A
= 150°C
T
= 150°C
A
0.1
0.1
0.01
0.1
1
10
-I
O
, OUTPUT CURRENT (mA)
Fig. 8 Typical Input ON Voltage
vs. Output Current (Q2, PNP)
-I
O
, OUTPUT CURRENT (mA)
Fig. 7 Typical Input Off Voltage
vs. Output Current (Q2, PNP)
4 of 6
February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
UMC4N
Package Outline Dimensions
SOT353
SOT353
Dim Min Max
A1
0.00 0.10
A2
0.90 1.00
Typ
0.05
1.00
0.25
0.11
2.15
2.10
1.30
E
E1
b
c
D
E
0.10 0.30
0.10 0.22
1.80 2.20
2.00 2.20
b
F
E1
1.15 1.35
e
F
L
a
0.650 BSC
0.40 0.45
0.425
D
0.25 0.40
0
°
8
°
0.30
—
All Dimensions in mm
A2
a
c
L
e
A1
Suggested Pad Layout
SOT353
X1
Value
Dimensions
(in mm)
0.650
1.900
1.300
0.420
1.720
0.600
2.500
C
C1
G
X
X1
Y
Y1
G
C1
Y1
Y
C
X
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February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
UMC4N
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2017, Diodes Incorporated
6 of 6
February 2017
© Diodes Incorporated
UMC4N
Document number: DS31203 Rev. 6 – 2
