Diodes-Incorporated-ZDT1048TA

ZDT1048  

SM-8 Dual NPN medium power high gain transistors  

Summary  

BV  

> 17.5V  

CEO  

I

= 5A  

C(cont)  

V

< 75mV @ 1A  

CE(sat)  

P =

 

2.75W  

D

Description  

C1  

E1  

C2  

E2  

Advanced process capability has been used to achieve  

this high performance device. Combining two NPN  

transistors in the SM-8 package provides a compact  

solution for the intended applications.  

B1  

B2  

Features  

•

•

•

•

Dual NPN device  

Very low saturation voltage  

High gain  

SM 8 package  

Applications  

•

•

CCFL invertors  

Royer circuits  

Ordering information  

DEVICE  

Reel size  

(inches)  

T

a

pe width  

(mm)  

Quantity  

per reel  

ZDT1048TA  

7

12  

1000  

Device marking  

T1048  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

1

ZDT1048  

Absolute maximum ratings  

Parameter  

Symbol  

Value  

Unit  

Collector-base voltage  

V

V

V

I

50  

V

CBO  

CEO  

EBO  

CM  

Collector-emitter voltage  

Emitter-base voltage  

17.5  

5

V

V

Peak pulse current  

20  

5

A

Continuous collector current  

Base current  

I

I

A

C

500  

mA  

B

Operating and storage temperature range  

T :T  

-55 to +150  

°C  

j

stg  

Thermal Characteristics  

Parameter  

Symbol  

Value  

Unit  

T

o

tal power dissipation at T  

Any single die “on”  

Both die “on” equally  

= 25°C*  

P

tot  

amb  

2.25  

2.75  

W

W

Derate above 25°C*  

Any single die “on”  

Both die “on” equally  

V

18  

22  

mW/°C  

mW/°C  

Thermal resistance – junction to ambient*  

Any single die “on”  

Both die “on” equally  

55.6  

45.5  

°C/W  

°C/W  

* The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to  

2 inches square.  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

2

ZDT1048  

Electrical characteristics (at T  

= 25°C unless otherwise stated).  

amb  

Parameter  

Symbol  

Min.  

Typ.  

Max.  

Unit Conditions  

Collector-base breakdown

 

V

(BR)CBO  

voltage  

50  

85  

V

V

V

V

V

I =100µA  

C

Collector-emitter  

V

V

V

V

50  

17.5  

50  

85  

24  

85  

8.7  

I =100µA  

C

CES  

breakdown voltage  

Collector-emitter  

breakdown voltage  

I =10mA  

C

CEO  

Collector-emitter  

breakdown voltage  

I =100µA,

 

V =1V  

C EB  

CEV  

Emitter-base breakdown  

voltage  

5

I =100µA  

E

(BR)EBO  

Collector cut-off current  

Emitter cut-off current  

I

I

I

0.3  

0.3  

0.3  

10  

10  

10  

nA  

nA  

nA  

V

V

=35V  

=4V  

CBO  

EBO  

CES  

CB  

EB  

Collector-emitter cut-off  

current  

I

=35V  

CES  

(*)  

Collector-emitter  

saturation voltage  

V

27  

55  

120  

200  

200  

45  

75  

160  

240  

300  

mV  

mV  

mV  

I =0.5A,

 

I =10mA  

CE(sat)  

C

B

(*)  

I =1A,

 

I =10mA  

C

B

(*)  

I =2A,

 

I =10mA  

C

B

(*)  

mV I

 

=5A, I

 

=100mA  

mV  

C

B

(*)  

I =5A,

 

I =50mA  

C

B

(*)  

Base-emitter saturation  

voltage  

V

V

h

1000  

1100  

mV  

I =5A,

 

I =100mA  

BE(sat)  

BE(on)  

C

B

(*)  

Base-emitter turn on  

voltage  

900  

1000  

mV  

I =5A,

 

V =2V  

C

CE  

(*)  

Static forward  

current transfer  

ratio  

280  

300  

300  

250  

50  

440  

450  

450  

300  

80  

I =10mA,

 

V =2V  

FE  

C

CE  

(*)  

I =0.5A,

 

V =2V  

C

CE  

1200  

(*)  

I =1A,

 

V =2V  

C

CE  

(*)  

I =5A,

 

V =2V  

C

CE  

(*)  

I =20A,

 

V =2V  

C

CE  

T

r

ansition frequency  

f

150  

MHz I

 

=50mA, V

 

=10V  

T

C

CE  

f=50MHz  

Output capacitance  

Switching times  

C

60  

80  

pF  

ns  

ns  

V

=10V, f=1MHz  

CB  

obo  

t

t

120  

250  

I

C

=4A, I

B

=40mA,V

CC

=10V  

I

C

=4A, I

B

= 40mA,V

CC

=10V  

on  

off  

NOTES:  

(*) Measured under pulsed conditions. Pulse width=300µs. Duty cycle

≤

2%  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

3

ZDT1048  

Typical characteristics  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

4

ZDT1048  

Package outline – SM8  

DIM  

Millimeters  

Inches  

Max.  

DIM  

Millimeters  

Inches  

Min.  

–

Max.  

1.7  

0.1  

–

Typ.  

Min.  

Typ.  

Min.  

Max.  

Typ.  

4.59  

1.53  

–

Min.  

Max.  

Typ.  

A

A1  

b

–

–

0.067  

–

e1  

e2  

He  

Lp  

␣

–

–

–

–

–

–

0.1807  

0.02  

–

–

0.0008 0.004  

–

–

–

0.0602  

0.7  

–

–

0.0275  

6.7  

0.9  

–

7.3  

–

0.264  

0.287  

–

–

c

0.24  

6.3  

3.3  

0.32  

6.7  

3.7  

–

–

–

0.009  

0.248  

0.130  

0.013  

0.264  

0.145  

–

–

–

–

0.035  

–

15°  

–

D

E

15°  

–

–

–

–

–

␤

–

10°  

10°  

Note:

Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

5

ZDT1048  

Definitions  

Product change  

Zetex Semiconductors reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  

service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  

Applications disclaimer  

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  

the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  

assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights  

arising from such use or otherwise. Zetex does not assume any legal responsibility or will not be held legally liable (whether in contract,  

tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,  

opportunity or consequential loss in the use of these circuit applications, under any circumstances.  

Life support  

Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written  

approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body  

or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  

cause the failure of the life support device or to affect its safety or effectiveness.  

Reproduction  

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  

company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  

representation relating to the products or services concerned.  

T

e

rms and Conditions  

All products are sold subjects to Zetex’ terms and conditions of sale, and this disclaimer (save in the event of a conflict between the two  

when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  

For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Zetex sales office.  

Quality of product  

Zetex is an ISO 9001 and TS16949 certified semiconductor manufacturer.  

To

e

nsure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our  

regionally authorized distributors. For a complete listing of authorized distributors please visit:

Zetex Semiconductors does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  

ESD (Electrostatic discharge)  

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  

The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  

of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  

Devices suspected of being affected should be replaced.  

Green compliance  

Zetex Semiconductors is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding reg-  

ulatory requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce  

the use of hazardous substances and/or emissions.  

All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with  

WEEE and ELV directives.  

Product status key:  

“Preview”  

“Active”  

Future device intended for production at some point. Samples may be available  

Product status recommended for new designs  

“Last time buy (LTB)”  

Device will be discontinued and last time buy period and delivery is in effect  

“Not recommended for new designs”

Device is still in production to support existing designs and production  

“Obsolete”  

Production has been discontinued  

Datasheet status key:  

“Draft version”  

This term denotes a very early datasheet version and contains highly provisional information, which  

may change in any manner without notice.  

“Provisional version”  

“Issue”  

This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  

However, changes to the test conditions and specifications may occur, at any time and without notice.  

This term denotes an issued datasheet containing finalized specifications. However, changes to  

specifications may occur, at any time and without notice.  

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Europe  

Americas  

Asia Pacific  

Corporate Headquarters  

Zetex GmbH  

Kustermann-park  

Balanstraße 59  

D-81541 München  

Germany  

Zetex Inc  

Zetex (Asia Ltd)  

Zetex Semiconductors plc  

Zetex

T

e

chnology Park, Chadderton  

Oldham, OL9 9LL  

700 Veterans Memorial Highway  

Hauppauge, NY 11788  

USA  

3701-04 Metroplaza

T

o

wer 1  

Hing Fong Road, Kwai Fong  

Hong Kong  

United Kingdom  

T

e

lefon: (49) 89 45 49 49 0  

Fax: (49) 89 45 49 49 49  

T

e

lephone: (1) 631 360 2222  

Fax: (1) 631 360 8222  

T

e

lephone: (852) 26100 611  

Fax: (852) 24250 494  

T

e

lephone: (44) 161 622 4444  

Fax: (44) 161 622 4446  

© 2007 Published by Zetex Semiconductors plc  

Issue 2 – December 2007  

© Zetex Semiconductors plc 2007  

6