Diodes-Incorporated-ZTX455QSTZ

NPN SILICON PLANAR  

ZTX454  

ZTX455  

MEDIUM POWER TRANSISTORS  

ISSUE 2 – MARCH 1994  

FEATURES  

*

*

*

140 Volt V

CEO  

1 Amp continuous current  

P

tot

= 1 Watt  

C

B

E

E-Line  

TO92 Compatible  

ABSOLUTE MAXIMUM RATINGS.  

PARAMETER  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

CM  

ZTX454  

140  

ZTX455  

160  

UNIT  

Collector-Base Voltage  

V

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

120  

140  

5

2

1

1

V

Peak Pulse Current  

A

Continuous Collector Current  

Power Dissipation at T

am

b

=25°C  

Operating and Storage Temperature Range  

I

C  

A

P

tot  

W

°C  

T

j

:T

stg  

-55 to +200  

ELECTRICAL CHARACTERISTICS (at T  

= 25°C).  

amb  

PARAMETER  

SYMBOL  

ZTX454  

ZTX455  

UNIT CONDITIONS.  

MIN. MAX.

 

MIN. MAX.  

Collector-Base  

Breakdown Voltage  

V

(BR)CBO

140  

V

CEO(sus)

120  

160  

140  

5

V

V

V

I

C

=100

µ

A  

I

C

=10mA*  

I

E

=100

µ

A  

Collector-Emitter  

Sustaining Voltage  

Emitter-Base  

Breakdown Voltage  

V

(BR)EBO  

I

CBO  

5

Collector Cut-Off  

Current  

0.1  

0.1  

0.7  

300  

V

C

B

=140V  

V

C

B

=120V  

µ

A  

µ

A  

0.1  

0.1  

Emitter Cut-Off  

Current  

I

EBO  

V

E

B

=4V  

µ

A  

Collector-Emitter  

Saturation Voltage  

V

CE(sat)  

h

FE  

0.7  

1.0  

V

I

C

=150mA, I

B

=15mA  

I

C

=200mA, I

B

=20mA  

Static Forward  

Current Transfer  

Ratio  

100  

30  

300  

100  

I

C

=150mA, V

C

E

=10V*  

I

C

=200mA, V

C

E

=1V*  

I

C

=1A, V

C

E

=10V*  

10†  

10†  

100  

Transition  

Frequency  

f

T  

100  

MHz  

pF  

I

C

=50mA, V

C

E

=10V  

f=100MHz  

Output Capacitance

 

C

obo  

15  

15  

V

C

B

=10V, f=1MHz  

* Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%  

† Typical  

3-179  

ZTX454  

ZTX455  

TYPICAL CHARACTERISTICS  

tf  

ns  

ts  

900  

µS  

7

tr  

ns  

tf  

0.4  

0.3  

500 800  

6

5

ts  

I

B1

=I

B2

=I

C

/10  

V

CE

=10V  

400 700  

I

C

/I

B

=10  

tr  

4

3

2

300 600  

td  

nS  

0.2  

0.1  

0

200  

500  

100  

50  

100 400  

1

0

td  

0

300  

0.01  

0

0.1  

1

0.001  

0.01  

0.1  

1

I

C

–

Collector Current (Amps)  

CE(sat)  

I

C

–

Collector Current (Amps)  

C

V

v I  

Typical Switching Speeds  

100  

1.0  

I

C

/I

B

=10  

80  

60  

40  

20  

0.8  

V

CE

=10V  

0.6  

0.4  

0.2  

1

0.001  

0.01  

0.1  

0.001  

0.01  

0.1  

1

10  

I

C

–

Collector Current (Amps)  

FE  

I

C

–

Collector Current (Amps)  

BE(sat)  

C

C

v I  

h

v I  

V

Single Pulse

T

e

st at T

amb

=25°C  

1

1.2  

1.0  

0.8  

0.6  

V

CE

=10V  

0.1  

D.C.  

1s  

100ms  

10ms  

1.0ms  

100µs  

0.01  

ZTX454  

ZTX455  

0.4  

0.0001  

0.001  

0.01  

0.1  

1

0.001  

1

10  

100  

1000  

I

C

–

Collector Current (Amps)  

BE(on)  

V

CE

–

Collector Voltage (Volts)  

C

V

v I  

Safe Operating Area  

3-180