Diodes-Incorporated-ZTX457

NPN SILICON PLANAR MEDIUM POWER  

HIGH VOLTAGE TRANSISTOR  

ISSUE 2 – MARCH 1994  

ZTX457  

FEATURES  

*

*

*

300 Volt V

CEO  

0.5 Amp continuous current  

P

tot

= 1 Watt  

C

B

E

E-Line  

TO92 Compatible  

ABSOLUTE MAXIMUM RATINGS.  

PARAMETER  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

CM  

VALUE  

UNIT  

V

Collector-Base Voltage  

300  

Collector-Emitter Voltage  

Emitter-Base Voltage  

300  

V

5

V

Peak Pulse Current  

1

A

Continuous Collector Current  

Power Dissipation at T

am

b

=25°C  

Operating and Storage Temperature Range  

I

C  

500  

1

mA  

W

°C  

P

tot  

T

j

:T

stg  

-55 to +200  

ELECTRICAL CHARACTERISTICS (at T  

= 25°C unless otherwise stated).  

amb  

PARAMETER  

SYMBOL MIN.  

V

(BR)CBO

300  

TYP.  

MAX. UNIT

 

CONDITIONS.  

Collector-Base  

Breakdown Voltage  

V

V

V

I

C

=100

µ

A, I

E

=0  

I

C

=10mA, I

B

=0*  

I

E

=100

µ

A  

Collector-Emitter  

Breakdown Voltage  

V

CEO(sus)

300  

Emitter-Base  

Breakdown Voltage  

V

(BR)EBO  

I

CBO  

5

Collector Cut-Off  

Current  

100  

10  

nA  

µ

A  

V

V

C

B

=200V, T

amb

=100°C  

Emitter Cut-Off Current

 

I

EBO  

100  

0.3  

nA  

V

V

E

B

=4V  

Collector-Emitter  

Saturation Voltage  

V

CE(sat)  

V

BE(sat)  

V

BE(on)  

I

C

=100mA, I

B

=10mA*  

Base-Emitter  

Saturation Voltage  

1

1

V

V

I

C

=100mA, I

B

=10mA*  

IC=100mA, V

C

E

=10V*  

Base-Emitter  

Turn On Voltage  

Static Forward Current

 

h

FE  

Transfer Ratio  

50  

50  

25  

I

C

=10mA, V

C

E

=10V*  

I

C

=50mA, V

C

E

=10V*  

I

C

=100mA, V

C

E

=10V*  

300  

Transition Frequency  

f

T  

75  

MHz  

I

C

=50mA, V

C

E

=10V  

f=20MHz  

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%  

3-181