Diodes-Incorporated-ZTX551

PNP SILICON PLANAR  

ZTX550  

ZTX551  

MEDIUM POWER TRANSISTORS  

ISSUE 1 – MARCH 94  

FEATURES  

*

*

*

60 Volt V

CEO  

1 Amp continuous current  

P

tot

= 1 Watt  

C

B

E

E-Line  

TO92 Compatible  

ABSOLUTE MAXIMUM RATINGS.  

PARAMETER  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

CM  

ZTX550 ZTX551  

UNIT  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

-60  

-45  

-80  

-60  

V

V

V

A

A

-5  

-2  

-1  

Peak Pulse Current  

Continuous Collector Current  

I

C  

Power Dissipation: at T

am

b

=25°C  

derate above 25°C  

P

tot  

1

5.7  

W

mW/ °C  

Operating and Storage Temperature Range  

T

j

:T

stg  

-55 to +200  

°C  

ELECTRICAL CHARACTERISTICS (at T  

= 25°C).  

amb  

PARAMETER  

SYMBOL  

ZTX550  

ZTX551  

UNIT CONDITIONS.  

MIN. MAX.

 

MIN. MAX.  

Collector-Base  

Breakdown Voltage  

V

(BR)CBO  

-60  

-80  

-60  

-5  

V

V

V

I

C

=-100

µ

A  

I

C

=-10mA*  

I

E

=-100

µ

A  

Collector-Emitter  

Sustaining Voltage  

V

CEO(sus)

-45  

Emitter-Base  

Breakdown Voltage  

V

(BR)EBO  

I

CBO  

-5  

Collector Cut-Off  

Current  

-0.1  

V

V

µ

A  

µ

A  

-0.1  

-0.1  

Emitter Cut-Off  

Current  

I

EBO  

-0.1  

V

E

B

=-4V  

µ

A  

Collector-Emitter  

Saturation Voltage  

V

CE(sat)  

-0.25  

-0.35  

V

I

C

=-150mA,  

I

B

=-15mA*  

Base-Emitter  

Saturation Voltage  

V

BE(sat)  

h

FE  

-1.1  

300  

-1.1  

150  

V

I

C

=-150mA,  

I

B

=-15mA*  

Static Forward  

Current Transfer  

Ratio  

100  

15  

50  

10  

I

C

=-150mA,  

V

C

E

=-10V*  

I

C

=-1A, V

C

E

=-10V*  

Transition  

Frequency  

f

T  

150  

150  

MHz I

C

=-50mA, V

C

E

=-10V  

f=100MHz  

3-194  

ZTX550  

ZTX551  

TYPICAL CHARACTERISTICS  

100  

-0.8  

-0.6  

80  

ZTX551  

ZTX550  

60  

ZTX551  

-0.4  

-0.2  

40  

I

C

/I

B

=10  

20  

0

-0.01  

-0.1  

-1  

-10  

-0.001  

-0.01  

-0.1  

-1  

-10  

I

C

–

Collector Current (Amps)  

I

C

–

Collector Current (Amps)  

FE  

CE(sat)  

V

C

v I  

C

v I  

h

-1.0  

-1.4  

-0.9  

-0.8  

-0.7  

-0.6  

-1.2  

-1.0  

-0.8  

-0.6  

-0.01  

-0.01  

-0.1  

-1  

-10  

-0.1  

-1  

-10  

I

C

–

Collector Current (Amps)  

I

C

–

Collector Current (Amps)  

BE(sat)  

C

v I  

V

V

BE(on)

v I

C  

Single Pulse

T

e

st at T

amb

=25°C  

10  

1

D.C.  

1s  

100ms  

10ms  

1.0ms  

0.3ms  

0.1ms  

0.1  

0.01  

0.1  

1

10  

100  

V

CE

–

Collector Voltage (Volts)  

Safe Operating Area  

3-195