Diodes-Incorporated-ZTX553

PNP SILICON PLANAR  

ZTX552  

ZTX553  

MEDIUM POWER TRANSISTORS  

ISSUE 1 – MARCH 94  

FEATURES  

*

*

*

100 Volt V

CEO  

1 Amp continuous current  

P

tot

=1 Watt  

C

B

E

E-Line  

TO92 Compatible  

ABSOLUTE MAXIMUM RATINGS.  

PARAMETER  

SYMBOL  

V

CBO  

V

CEO  

V

EBO  

I

CM  

ZTX552  

-100  

ZTX553  

-120  

UNIT  

Collector-Base Voltage  

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

V

A

A

-80  

-100  

-5  

-2  

-1  

Peak Pulse Current  

Continuous Collector Current  

I

C  

Power Dissipation:

 

at T

am

b

=25°C  

derate above 25°C  

P

tot  

1

5.7  

W

mW/ °C  

Operating and Storage Temperature Range  

T

j:

T

stg  

-55 to +200  

°C  

ELECTRICAL CHARACTERISTICS (at T  

= 25°C).  

amb  

PARAMETER  

SYMBOL  

ZTX552  

ZTX553  

UNIT CONDITIONS.  

MIN. MAX.

 

MIN. MAX.  

Collector-Base  

Breakdown Voltage  

V

(BR)CBO

-100  

V

CEO(sus)

-80  

-120  

-100  

-5  

V

I

C

=-100

µ

A  

I

C

=-10mA  

I

E

=-100

µ

A  

Collector-Emitter  

Sustaining Voltage  

V

Emitter-Base  

Breakdown Voltage  

V

(BR)EBO  

I

CBO  

-5  

V

Collector Cut-Off  

Current  

-0.1  

V

C

B

=-80V  

V

C

B

=-100V  

µ

A  

-0.1  

Emitter Cut-Off Current

 

I

EBO  

-0.1  

-0.1  

V

E

B

=-4V  

µ

A  

Collector-Emitter  

Saturation Voltage  

V

CE(sat)  

V

BE(sat)  

V

BE(on)  

-0.25  

-0.25  

V

I

C

=-150mA, I

B

=-15mA*  

Base-Emitter  

Saturation Voltage  

-1.1  

-1.0  

150  

-1.1  

-1.0  

200  

V

V

I

C

=-150mA, I

B

=-15mA*  

I

C

=-150mA, V

C

E

=-10V*  

Base-Emitter  

Turn-onn Voltage  

Static Forward Current

 

h

FE  

Transfer Ratio  

40  

10  

40  

10  

I

C

=-150mA, V

C

E

=-10V*  

I

C

=-1A, V

C

E

=-10V*  

Transition Frequency  

f

T  

150  

150  

MHz  

MHz  

I

C

=-50mA, V

C

E

=-10V  

f=100MHz  

Output Capacitance  

C

obo  

12  

12  

V

C

B

=-10V, f=1MHz  

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%  

3-196  

ZTX552  

ZTX553  

TYPICAL CHARACTERISTICS  

tf  

ts  

nS  

µS  

600  

3

I

B1

=I

B2

=I

C

/10  

td  

tr  

ns  

100 200  

ns  

-0.8  

-0.6  

ts  

400  

2

80 160  

tf  

I

C

/I

B

=10  

60 120  

td  

-0.4  

-0.2  

1

200  

100  

40 80  

tr  

20 40  

0

0

0

0

0

-0.01  

-0.1  

-1  

-0.001  

-0.01  

-0.1  

-1  

I

C

–

Collector Current (Amps)  

CE(sat)  

I

C

–

Collector Current (Amps)  

C

V

v I  

Switching Speeds  

100  

-1.0  

-0.8  

-0.6  

-0.4  

-0.2  

I

C

/I

B

=10  

80  

60  

40  

20  

V

CE

=-10V  

-1  

-0.001  

-0.01  

-0.1  

-0.001  

-0.01  

-0.1  

-1  

-10  

I

C

–

Collector Current (Amps)  

FE  

I

C

–

Collector Current (Amps)  

BE(sat)  

C

C

v I  

h

v I  

V

Single Pulse

T

e

st at T

amb

=25°C  

-10  

-1.2  

-1.0  

-0.8  

-0.6  

V

CE

=-10V  

-1  

D.C.  

1s  

100ms  

10ms  

1.0ms  

100µs  

-0.1  

ZTX552  

-0.4  

-0.0001  

-0.001  

-0.01  

-0.1  

-1  

-0.01  

-0.1  

-1  

-10  

-100  

I

C

–

Collector Current (Amps)  

BE(on)  

V

CE

–

Collector Voltage (Volts)  

C

V

v I  

Safe Operating Area  

3-197