Diodes-Incorporated-ZTX558
| Part # | Diodes-Incorporated-ZTX558 |
Download  | Diodes-Incorporated-ZTX558 |
PNP SILICON PLANAR MEDIUM POWER
HIGH VOLTAGE TRANSISTOR
ISSUE 1 APRIL 94
ZTX558
FEATURES
*
*
*
400 Volt V
CEO
200mA continuous current
P
tot
= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
VALUE
UNIT
V
Collector-Base Voltage
-400
Collector-Emitter Voltage
Emitter-Base Voltage
-400
V
-5
-200
V
Continuous Collector Current
Power Dissipation
mA
W
P
tot
1
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C).
amb
PARAMETER
SYMBOL MIN.
V
(BR)CBO
-400
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V
V
V
I
C
=-100
µ
A
Collector-Emitter
Breakdown Voltage
V
BR(CEO)
-400
-5
I
C
=-10mA*
Emitter-Base Breakdown
V
(BR)EBO
Voltage
I
E
=-100
µ
A
Collector Cut-Off Current
I
CBO
Collector Cut-Off Current
I
CES
-100
-100
-100
nA
nA
nA
V
C
B
=-320V
V
C
E
=-320V
V
E
B
=-4V
Emitter Cut-Off Current
I
EBO
Collector-Emitter
Saturation Voltage
V
CE(sat)
-0.2
-0.5
V
V
I
C
=-20mA, I
B
=-2mA
I
C
=-50mA, I
B
=-6mA
Base-Emitter
Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
-0.9
V
I
C
=-50mA, I
B
=-5mA
Base-Emitter
Turn On Voltage
-0.9
V
IC=-50mA, V
C
E
=-10V
Static Forward Current
Transfer Ratio
100
100
15
I
C
=-1mA, V
C
E
=-10V
I
C
=-50mA, V
C
E
=-10V
I
C
=-100mA, V
C
E
=-10V*
300
5
Transition
Frequency
f
T
50
MHz
pF
I
C
=-10mA, V
C
E
=-20V
f=20MHz
Collector-Base
Breakdown Voltage
C
obo
V
C
B
=-20V, f=1MHz
Switching times
t
on
t
off
95
1600
ns
ns
I
C
=-50mA, V
C
=-100V
I
B
1
=5mA, I
B2
=-10mA
* Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
3-202
ZTX558
TYPICAL CHARACTERISTICS
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=10
I
C
/I
B
=20
I
C
/I
B
=50
I
C
/I
B
=10
1.6
1.4
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
I
C
–
Collector Current (Amps)
I
C
–
Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
I
C
/I
B
=10
V
CE
=10V
1.6
1.4
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
300
200
100
1.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
10 20
1
0.001
0.01
0.1
1
10 20
I
C
–
Collector Current (Amps)
FE
I
C
–
Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse
T
e
st at T
amb
=25°C
1.0
0.1
-55°C
+25°C
+100°C
+175°C
V
CE
=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0
0.001
0.01
0.1
1
10 20
0.001
1
10
100
1000
I
C
–
Collector Current (Amps)
BE(on)
V
CE
–
Collector Voltage (Volts)
C
V
v I
Safe Operating Area
3-203
