Diodes-Incorporated-ZTX601B
| Part # | Diodes-Incorporated-ZTX601B |
Download  | Diodes-Incorporated-ZTX601B |
ZTX600 Not Recommended for
New Design Please Use ZTX601
NPN SILICON PLANAR MEDIUM POWER
DARLINGTON TRANSISTORS
ISSUE 2 JUNE 94
ZTX600
ZTX601
FEATURES
*
*
*
*
160 Volt V
CEO
1 Amp continuous current
Gain of 5K at I
C
=1 Amp
P
tot
= 1 Watt
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
ZTX600
160
ZTX601
180
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
V
A
A
140
160
10
4
Peak Pulse Current
Continuous Collector Current
I
C
1
Power Dissipation
at T
am
b
=25°C
derate above 25°C
P
tot
1
5.7
W
mW/ °C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX.
MIN. TYP. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
160
V
(BR)CEO
140
V
(BR)EBO
10
I
CBO
180
160
10
V
V
V
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
0.01
10
V
C
B
=140V
V
C
B
=160V
V
C
B
=140V,
T =100°C
V
C
B
=160V,
T =100°C
µ
A
µ
A
µ
A
µ
A
0.01
10
Emitter Cut-Off
Current
I
EBO
0.1
10
0.1
V
E
B
=8V
µ
A
Colllector-Emitter
Cut-Off Current
I
CES
V
CE
S
=140V
V
CE
S
=160V
µ
A
µ
A
10
Collector-Emitter
Saturation Voltage
V
CE(sat)
V
BE(sat)
V
BE(on)
0.75 1.1
0.85 1.2
0.75 1.1
0.85 1.2
V
V
I
C
=0.5A, I
B
=5mA*
I
C
=1A, I
B
=10mA*
Base-Emitter
Saturation Voltage
1.7
1.9
1.7
1.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
1.5
1.7
1.5
1.7
V
IC=1A, V
C
E
=5V*
3-206
ZTX600 Not Recommended for
New Design Please Use ZTX601
ZTX600
ZTX601
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
SYMBOL
ZTX600
ZTX601
UNIT CONDITIONS.
MIN. TYP. MAX.
MIN. TYP. MAX.
Static Forward
Current Transfer
Ratio
h
FE
1K
2K
1K
1K
100K 2K
1K
I
C
=50mA, V
C
E
=10V*
I
C
=0.5A, V
C
E
=10V*
I
C
=1A, V
C
E
=10V*
100K
20K
1K
2K
1K
2K
5K
3K
1K
20K 2K
1K
2K
5K
3K
I
C
=50mA, V
C
E
=10V*
I
C
=0.5A, V
C
E
=10V*
I
C
=1A, V
C
E
=10V*
Group A
Group B
5K
10K
5K
10K
I
C
=50mA, V
C
E
=10V*
I
C
=0.5A, V
C
E
=10V*
I
C
=1A, V
C
E
=10V*
10K 20K 100K
10K 20K 100K
5K 10K
5K 10K
Transition
Frequency
f
T
150 250
150 250
MHz I
C
=100mA,
V
C
E
=10V f=20MHz
V
E
B
=0.5V, f=1MHz
V
C
E
=10V, f=1MHz
Input Capacitance
C
ibo
60
10
90
15
60
10
90
15
pF
pF
Output
Capacitance
C
obo
Switching Times
t
on
t
off
0.75
2.2
0.75
2.2
I
C
=0.5A, V
C
E
=10V
I
B
1
=I
B
2
=0.5mA
µ
s
µ
s
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
R
= 50K
Ω
R =
5K
Ω
1.0
0.8
0.6
0.4
0.2
0
R
R
= 1M
Ω
=
∞
DC Conditions
1
10
100
200
V
CE
– Collector-Emitter Voltage (Volts)
Voltage Derating Graph
The maximum permissible operational temperature can be obtained from this graph using the
following equation
Power
(
max
) −
Power
(
ac
t
)
T
=
)
+
25
°
C
(
0.0057
T
amb(ma
x
)
= Maximum operating ambient temperature
Power(max) = Maximum power dissipation figure, obtained from the above graph for a given V
CE
and source resistance (R
S
)
Power(actual)= Actual power dissipation in users circuit
3-207
ZTX600 Not Recommended for
New Design Please Use ZTX601
ZTX600
ZTX601
TYPICAL CHARACTERISTICS
20k
1.00
0.90
Group B
V
CE
=10V
16k
12k
8k
I
C
/I
B
=100
0.80
0.70
0.60
Group A
4k
0
0.01
0.1
1
10
0.001
0.01
0.1
1
10
I
C
–
Collector Current (Amps)
I
C
–
Collector Current (Amps)
h
FE
v I
C
CE(sat)
V
C
v I
1.8
1.5
1.4
1.6
1.4
V
CE
=5V
1.3
1.2
1.1
I
C
/I
B
=100
1.2
1.0
0.01
0.1
1
10
0.01
0.1
1
10
I
C
–
Collector Current (Amps)
BE(sat)
I
C
–
Collector Current (Amps)
BE(on)
C
v I
V
C
v I
V
Single Pulse
T
e
st at T
amb
=25°C
10
1
0.1
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.01
0.001
1
10
100
1000
V
CE
–
Collector Voltage (Volts)
Safe Operating Area
3-208
Mouser Electronics
Authorized Distributor
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