Diodes-Incorporated-ZTX690B
| Part # | Diodes-Incorporated-ZTX690B |
Download  | Diodes-Incorporated-ZTX690B |
NPN SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 MAY 94
ZTX690B
FEATURES
*
*
*
45 Volt V
CEO
Gain of 400 at I
C
=1 Amp
Very low saturation voltage
APPLICATIONS
*
*
*
*
Darlington replacement
Siren Drivers
C
B
E
Battery powered circuits
Motor drivers
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
VALUE
UNIT
V
Collector-Base Voltage
45
45
5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
6
A
Continuous Collector Current
Practical Power Dissipation*
I
C
2
A
P
totp
P
tot
1.5
W
Power Dissipation
at T
am
b
=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
45
45
5
V
V
V
I
C
=100
µ
A
I
C
=10mA*
I
E
=100
µ
A
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
I
CBO
0.1
0.1
V
C
B
=35V
µ
A
µ
A
I
EBO
V
E
B
=4V
Collector-Emitter Saturation
Voltage
V
CE(sat)
0.1
0.5
V
V
I
C
=0.1A, I
B
=0.5mA*
I
C
=1A, I
B
=5mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
V
BE(on)
h
FE
0.9
V
I
C
=1A, I
B
=10mA*
Base-Emitter
Turn-On Voltage
0.9
V
IC=1A, V
C
E
=2V*
Static Forward Current
Transfer Ratio
500
400
150
I
C
=100mA, V
C
E
=2V*
I
C
=1A, V
C
E
=2V*
I
C
=2A, V
C
E
=2V*
3-238
ZTX690B
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT
CONDITIONS.
Transition Frequency
f
T
150
MHz
I
C
=50mA, V
C
E
=5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
C
ibo
200
16
pF
pF
V
E
B
=0.5V, f=1MHz
V
C
B
=10V, f=1MHz
C
obo
t
on
t
off
33
1300
ns
ns
I
C
=500mA, I
B!
=50mA
I
B
2
=50mA, V
C
C
=10V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance:Junction to Ambient
1
Junction to Ambient
2
Junction to Case
R
th(j-amb)1
R
th(j-amb)2
R
th(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t
1
/t
P
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80
100 120 140 160 180 200
T –
T
e
mperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-239
ZTX690B
TYPICAL CHARACTERISTICS
T
amb
=25°C
-55°C
+25°C
+100°C
+175°C
I
C
/I
B
=200
I
C
/I
B
=100
I
C
/I
B
=10
I
C
/I
B
=100
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0.01
0.1
1
10
0.01
0.1
1
10
I
C
–
Collector Current (Amps)
I
C
–
Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
+100°C
+25°C
-55°C
V
CE
=2V
-55°C
+25°C
+100°C
+175°C
1.6
I
C
/I
B
=100
1.6
1.4
1.2
1.5K
1K
1.4
1.2
1.0
0.8
1.0
0.8
0.6
0.4
0.2
0.6
0.4
0.2
500
0
0
0.01
0.1
10
1
0
0.01
0.1
1
10
I
C
–
Collector Current (Amps)
I
C
–
Collector Current (Amps)
V
BE(sat)
v I
C
h
FE
v I
C
Single Pulse
T
e
st at T
amb
=25°C
10
1
-55°C
+25°C
V
CE
=2V
1.6
+100°C
+175°C
1.4
1.2
1.0
0.8
0.6
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0.4
0.2
0
0
0.01
0.01
0.1
1
10
0.1
1
10
100
I
C
–
Collector Current (Amps)
BE(on)
V
CE
–
Collector
V
o
ltage (Volts)
C
V
v I
Safe Operating Area
3-240
Mouser Electronics
Authorized Distributor
Click to View Pricing, Inventory, Delivery & Lifecycle Information:
