Diodes-Incorporated-ZTX853

Part #	Diodes-Incorporated-ZTX853
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NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 3 – NOVEMBER 1995

ZTX853

FEATURES

*

*

*

*

*

100 Volt V

CEO

4 Amps continuous current

Up to 10 Amps peak current

Very low saturation voltage

P

tot

=1.2 Watts

C

B

E

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V

CBO

V

CEO

V

EBO

I

CM

VALUE

UNIT

V

Collector-Base Voltage

200

Collector-Emitter Voltage

Emitter-Base Voltage

100

V

6

V

Peak Pulse Current

10

4

A

Continuous Collector Current

Practical Power Dissipation*

Power Dissipation at T

am

b

=25°C

Operating and Storage Temperature Range

I

C

A

P

totp

1.58

W

W

°C

P

tot

1.2

T

j

:Tstg

-55 to +200

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated)

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

V

(BR)CER

V

(BR)CEO

V

(BR)EBO

I

CBO

200

200

100

6

300

300

120

8

V

V

V

V

I

C

=100

µ

A

Collector-Emitter Breakdown

Voltag

IC=1

µ

A, RB

≤

1K

Ω

I

C

=10mA*

Collector-Emitter Breakdown

Voltage

Emitter-Base Breakdown

Voltage

I

E

=100

µ

A

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

50

1

nA

µ

A

V

C

B

=150V

V

C

B

=150V, T

am

b

=100°C

I

CER

R

≤

1K

Ω

50

1

nA

µ

A

V

C

B

=150V

V

C

B

=150V, T

am

b

=100°C

I

EBO

10

nA

V

E

B

=6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

14

100

160

50

150

200

mV

mV

mV

I

C

=0.1A, I

B

=5mA

I

C

=2A, I

B

=100mA

I

C

=4A, I

B

=400mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

960

1100 mV

I

C

=4A, I

B

=400mA*

3-297

ZTX853

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

PARAMETER

SYMBOL MIN. TYP.

MAX. UNIT

CONDITIONS.

Base-Emitter

Turn-On Voltage

V

BE(on)

830

950

V

IC=4A, V

C

E

=2V*

Static Forward

Current Transfer

Ratio

h

FE

100

100

50

200

200

100

30

I

C

=10mA, V

C

E

=2V

I

C

=2A, V

C

E

=2V*

I

C

=4A, V

C

E

=2V*

I

C

=10A, V

C

E

=2V*

300

20

Transition Frequency

f

T

130

MHz

pF

I

C

=100mA, V

C

E

=10V

f=50MHz

Output Capacitance

Switching Times

C

obo

35

V

C

B

=10V, f=1MHz

t

on

t

off

50

1650

ns

ns

I

C

=1A, I

B!

=100mA

I

B

2

=100mA, V

C

C

=10V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

≤

2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

R

th(j-amb)

R

th(j-case)

150

50

°C/W

°C/W

4.0

3.0

2.0

1.0

D.C.

150

t

1

D=t

1

/t

P

100

50

0

t

P

D=0.6

D=0.2

D=0.1

D=0.05

Single Pulse

-40 -20

0

20

0.0001 0.001

0.01

0.1

1

10

100

40 60 80

100 120 140 160 180 200

T –

T

e

mperature

(°C)

Pulse Width (seconds)

Derating curve

Maximum transient thermal impedance

3-298

ZTX853

TYPICAL CHARACTERISTICS

0.8

0.6

0.4

1.6

1.4

1.2

1.0

300

200

100

0.8

I

C

/I

B

=10

I

C

/I

B

=50

V

CE

=5V

V

CE

=1V

0.6

0.4

0.2

0

0.2

0

100

0.01

0.1

1

10

0.01

0.1

1

10

100

I

C

–

Collector Current (Amps)

I

C

–

Collector Current (Amps)

CE(sat)

V

C

v I

FE

h

C

v I

V

CE

=1V

2.0

2.0

1.5

1.0

0.5

1.5

1.0

0.5

I

C

/I

B

=50

1

1

0.001

0.01

0.1

10

100

0.001

0.01

0.1

10

100

I

C

–

Collector Current (Amps)

BE(sat)

I

C

–

Collector Current (Amps)

BE(on)

C

V

v I

V

v I

C

Single Pulse

T

e

st at T

amb

=25°C

10

1

D.C.

1s

100ms

10ms

1.0ms

0.1ms

0.1

0.01

0.1

1

10

100

V

CE

–

Collector Voltage (Volts)

Safe Operating Area

3-299