Diodes-Incorporated-ZTX955
| Part # | Diodes-Incorporated-ZTX955 |
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PNP SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 3 JUNE 94
ZTX955
FEATURES
*
*
*
*
*
3 Amps continuous current
Up to 10 Amps peak current
Very low saturation voltage
Excellent gain characteristics up to 3 Amps
Spice model available
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
VALUE
UNIT
V
Collector-Base Voltage
-180
-140
-6
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-10
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at T
am
b
=25°C
Operating and Storage Temperature Range
I
C
-3
A
P
totp
P
tot
1.58
W
W
°C
1.2
T
j
:T
stg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT
CONDITIONS.
Collector-Base Breakdown
Voltage
V
(BR)CBO
V
(BR)CER
V
(BR)CEO
V
(BR)EBO
I
CBO
-180
-180
-140
-6
-210
-210
-170
-8
V
V
V
V
I
C
=-100
µ
A
Collector-Emitter Breakdown
Voltag
IC=-1
µ
A, RB
≤
1K
Ω
I
C
=-10mA*
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
I
E
=-100
µ
A
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
-50
-1
nA
µ
A
V
C
B
=-150V
V
C
B
=-150V, T
am
b
=100°C
I
CER
R
≤
1K
Ω
-50
-1
nA
µ
A
V
C
B
=-150V
V
C
B
=-150V, T
am
b
=100°C
I
EBO
-10
nA
V
E
B
=-6V
Collector-Emitter Saturation
Voltage
V
CE(sat)
-30
-60
-90
-250
-60
mV
mV
mV
mV
I
C
=-100mA, I
B
=-5mA*
I
C
=-500mA, I
B
=-50mA*
I
C
=-1A, I
B
=-100mA*
I
C
=-3A, I
B
=-300mA*
-100
-120
-330
Base-Emitter
Saturation Voltage
V
BE(sat)
-920
-1050 mV
I
C
=-3A, I
B
=-300mA*
3-321
ZTX955
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT
CONDITIONS.
Base-Emitter
Turn-On Voltage
V
BE(on)
-790
-900
mV
IC=-3A, V
C
E
=-5V*
Static Forward
Current Transfer Ratio
h
FE
100
100
75
200
200
140
10
I
C
=-10mA, V
C
E
=-5V*
I
C
=-1A, V
C
E
=-5V*
I
C
=-3A, V
C
E
=-5V*
I
C
=-10A, V
C
E
=-5V*
300
Transition Frequency
f
T
110
MHz
pF
I
C
=-100mA, V
C
E
=-10V
f=50MHz
Output Capacitance
Switching Times
C
obo
40
V
C
B
=-20V, f=1MHz
t
on
t
off
68
1030
ns
ns
I
C
=-1A, I
B
1
=-100mA
I
B
2
=100mA, V
C
C
=-50V
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
R
th(j-amb)
R
th(j-case)
150
50
°C/W
°C/W
4.0
3.0
2.0
1.0
D.C.
150
t
1
D=t
1
/t
P
100
50
0
t
P
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
-40 -20
0
20
0.0001 0.001
0.01
0.1
1
10
100
40 60 80
100 120 140 160 180 200
T –
T
e
mperature
(°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-322
ZTX955
TYPICAL CHARACTERISTICS
I
C
/I
B
=50
I
C
/I
B
=10
-55°C
+25°C
+175°C
T
amb
=25°C
I
C
/I
B
=10
1.6
1.4
1.2
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
1.0
0.8
0.6
0.4
0.2
0
0
0.001
0.01
0.1
1
10 20
0.001
0.01
0.1
1
10 20
I
C
–
Collector Current (Amps)
I
C
–
Collector Current (Amps)
CE(sat)
V
C
CE(sat)
V
C
v I
v I
-55°C
+25°C
+100°C
+175°C
+100°C
+25°C
-55°C
V
CE
=5V
I
C
/I
B
=10
1.6
1.4
1.2
1.0
1.6
1.4
1.2
300
200
100
1.0
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
0.2
0.001
0.01
0.1
10 20
1
0
0.001
0.01
0.1
1
10 20
I
C
–
Collector Current (Amps)
FE
I
C
–
Collector Current (Amps)
BE(sat)
C
C
v I
h
v I
V
Single Pulse
T
e
st at T
amb
=25°C
10
1
-55°C
+25°C
+100°C
+175°C
V
CE
=5V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0.1
0
0.001
0.01
0.1
1
10 20
0.01
1
10
100
1000
I
C
–
Collector Current (Amps)
V
CE
–
Collector Voltage (Volts)
V
BE(on)
v I
C
Safe Operating Area
3-323
