Diodes-Incorporated-ZUMT617TA
| Part # | Diodes-Incorporated-ZUMT617TA |
Download  | Diodes-Incorporated-ZUMT617TA |
Super323
SOT323 NPN SILICON POWER
ZUMT617
(SWITCHING) TRANSISTOR
ISSUE 1 – SEPTEMBER 1998
FEATURES
*
*
*
*
*
500mW POWER DISSIPATION
I
C
CONT 1.5A
5A Peak Pulse Current
Excellent H
FE
Characteristics Up To 5A (pulsed)
Extremely Low Equivalent On Resistance;
R
CE(sat)
APPLICATIONS
*
*
DC-DC converter boost functions
Motor drive functions
DEVICE TYPE
ZUMT617
COMPLEMENT
ZUMT717
PARTMARKING
T61
R
CE(sat)
135m
Ω
at 1.5A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
A
LUE
15
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current**
Continuous Collector Current
Base Current
V
CBO
V
CEO
V
EBO
I
CM
I
C
15
V
5
V
5
A
1.5
200
A
I
B
mA
mW
Power Dissipation at T
amb
=25°C*
P
tot
385 †
500 ‡
Operating and Storage Temperature
T
j
:T
stg
Range
-55 to +150
°C
†
‡
Recommended P
tot
calculated using FR4 measuring 10 x 8 x 0.6mm (still air).
Maximum power dissipation is calculated assuming that the device is mounted on FR4
size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers.
ZUMT617
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL
V
(BR)CBO
MIN.
TYP.
MAX. UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
15
15
5
V
I
C
= 100
µ
A
I
C
= 10mA*
I
E
= 100
µ
A
V
C
B
= 10V
V
E
B
= 4V
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
V
(BR)EBO
I
CBO
V
Emitter-Base
Breakdown Voltage
V
Collector Cut-Off
Current
10
10
10
nA
nA
nA
Emitter Cut-Off
Current
I
EBO
Collector Emitter
Cut-Off Current
I
CES
V
CES
= 10V
Collector-Emitter
Saturation Voltage
V
CE(sat)
16.5
40
20
mV
mV
mV
mV
mV
I
C
= 100mA, I
B
=10mA*
I
C
= 250mA, I
B
= 10mA*
I
C
= 500mA, I
B
=10mA*
I
C
= 1A, I
B
=10mA*
55
75
100
200
245
150
205
I
C
= 1.5A, I
B
=20mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
930
1100
mV
I
C
= 1.5A, I
B
=20mA*
Base-Emitter Turn-On
V
BE(on)
Voltage
865
1100
mV
I =
1.5A, V
C
E
= 2V*
C
Static Forward
Current Transfer
Ratio
h
FE
200
300
250
200
75
420
450
390
300
150
75
I
C
= 10mA, V
C
E
= 2V*
I
C
= 100mA, V
C
E
= 2V*
I
C
= 500mA, V
C
E
=2V*
I
C
= 1A, V
C
E
=2 V*
I
C
= 3A, V
C
E
=2V*
30
I
C
=5A, V
C
E
= 2V*
Transition
Frequency
f
T
180
MHz
I
C
= 50mA, V
C
E
= 10V
f= 100MHz
Output Capacitance
Turn-On Time
C
obo
t
(on)
t
(off)
15
pF
ns
ns
V
C
B
= 10V, f=1MHz
V
C
C
= 10V, I
C
= 1A
50
I
B
1
=I
B
2
=100mA
Turn-Off Time
250
*Measured under pulsed conditions. Pulse width=300
µ
s. Duty cycle
≤
2%
ZUMT617
TYPICAL CHARACTERISTICS
0.4
0.3
0.2
0.1
0
0.4
+25°C
IC/IB=50
0.3
IC/IB=10
IC/IB=50
IC/IB=100
-55°C
+25°C
+100°C
+150°C
0.2
0.1
0
1m
10m
100m
1
10
1m
10m
100m
1
10
I
C
– Collector Current (A)
I
C
– Collector Current (A)
V
CE(sat)
v I
C
V
CE(sat)
v I
C
800
600
400
200
0
VCE=2V
IC/IB=50
1.0
0.75
0.5
+100°C
+25°C
-55°C
+25°C
+100°C
+150°C
-55°C
0.25
0
1m
10m
100m
1
10
1m
10m
100m
1
10
I
C
– Collector Current (A)
I
C
– Collector Current (A)
h
FE
v I
C
V
BE(sat)
v I
C
10
1
1.0
0.8
0.6
0.4
0.2
0
DC
1s
100ms
10ms
1ms
-55°C
100m
+25°C
+100°C
+150°C
100us
10m
100m
1
10
100
1m
10m
100m
1
10
I
C
– Collector Current (A)
V
CE
– Collector Emitter Voltage (V)
V
BE(on)
v I
C
Safe Operating Area
