Diodes-Incorporated-ZVN2110A

Part #	Diodes-Incorporated-ZVN2110A
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N-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ZVN2110A

I

S

SUE 2 – M

A

RCH 94

FEATURES

*

*

100

V

o

l

t V

DS

R

D

S

(

o

n

)

= 4

Ω

D

G

S

E-Li

n

e

TO92 Com patible

AB

S

O

L

U

TE MAXIMUM RATING

S

.

PARAMETER

S Y

M

BOL

V

DS

V

A

LUE

UN

I

T

V

Dra in -S o u rce

Vo ltag e

100

320

Co n tin u o u s

Dra in

Cu rren t

at T

a m b

=25°C

Pu ls e d

Dra in

Cu rre n t

I

D

m A

A

I

DM

6

Ga te

S o u rce

V

o lta g e

V

G

S

V

±

20

Po w e r

Dis s ip a tio n

a t

T

a m b

=25°C

Op e ratin g

a n d

S to ra g e

Te m p e ratu re

Ra n g e

P

t

o t

700

m W

°C

T

j

:T

s

t

g

-55 to +150

ELECTRICAL CHARACTERI

S

T

ICS

(

a

t T

= 25°C unless otherw

ise stated).

am b

PARAMETER

S Y

M

BOL

M

I

N

.

MAX. UN

I

T

CONDITIONS .

Dra in -S o u rce

Bre akd o w n

Vo lta g e

BV

DS S

1

00

V

I

D

=1m A,

V

G

S

=0V

Ga te-S o u rce

Th res h o ld

Vo lta g e

V

G

S (th )

0.8

2.4

20

V

ID=1m A,

V

DS

= V

G

S

Ga te-Bo d y

L

e

a

k

a g e

I

G

S S

I

DS S

n A

V

G

S

=

±

2

0

V

, V

DS

=0V

Ze ro

Ga te

V

o lta g e

Dra in

Cu rre n t

1

100

V

DS

=100

V

, V

G

S

=0

µ

A

µ

A

V

DS

=80

V

, V

G

S

=0

V

, T=125°C

(2)

On -S ta te

Dra in

Cu rre n t(1)

I

D(o n )

1.5

A

V

DS

=25

V

, V

G

S

=10V

V

G

S

=10

V

,

I

D

=1A

S ta tic

Drain -S o u rce

On -S ta te

R

DS (o n )

Res is ta n ce

(1)

4

Ω

Fo rw a rd

Tra n s co n d u ctan ce

(1)(2)

g

fs

250

m S

V

DS

=25

V

,

I

D

=1A

In p u t

Ca p a citan ce

(2)

C

is s

75

25

p F

p F

Co m m o n

S o u rce

Ou tp u t

Cap acita n ce

(2)

C

o s s

V

DS

=25 V, V

G

S

=0

V

, f=1MHz

Reve rs e

Tra n s fe r

Cap acita n ce

(2)

C

r

s s

8

p F

Tu rn -On

De lay

Tim e

(2)(3)

Ris e

Tim e

(2)(3)

t

d (o n )

t

r

t

d (o ff)

t

f

7

n s

n s

n s

n s

8

V

DD

≈

2

5

V

, I

D

=1A

Tu rn -Off

De la y

Tim e

(2)(3)

Fa ll

Tim e

(2)(3)

13

13

(1) Measured under pu

l

s

ed cond

i

ti

o

ns. W

i

d

th=300

µ

s

.

D

u

ty cycle

≤

2%

(2) Sam ple

test

(3) Switching tim

es m

easured with 50

Ω

s

ource im

pedance and <5ns rise tim

e on a pulse generator

ZVN2110A

TYPICAL CHARACTERISTICS

V

GS=

V

GS=

10V

9V

2.0

2.0

1.6

1.2

10V

9V

8V

7V

6V

1.6

1.2

8V

7V

5V

6V

0.8

0.8

0.4

0

5V

4V

3V

0.4

0

4V

3V

100

2

4

6

8

10

0

20

40

60

80

V

DS

– Drain Source

V

o

l

tage (

V

o

l

ts)

V

DS

– Drain Source

V

o

l

tage (

V

o

l

ts)

Output Characteristics

Saturation Characteristics

10

2.8

2.4

2.0

1.6

8

6

V

D

S

=

25V

V

D

S

=

10V

1.2

0.8

0.4

4

2

I

D=

1A

500m A

100m A

0

0

0

2

4

6

8

10

0

2

4

6

8

10

V

GS

–

Gate Source Voltage

(

V

o

lts)

V

GS-

Gate Source

V

o

l

tage (

V

o

l

ts)

Transfer Characteristics

Voltage Saturation Characteristics

2.4

10

5

2.2

2.0

1.8

1.6

1.4

e

R

c

n

V

GS=

10V

ta

s

i

s

I

D=

1 A

e

R

I

D

=

rce

u

1A

500m A

100m A

o

S

–

n

V

GS=

V

DS

I

D=

1m A

1.2

1.0

0.8

0.6

Drai

1

1

10

100

-40

80

120

100 140

160 180

-20

0

20 40 60

V

GS-

Gate Source Voltage

(

V

o

lts)

T

j

-Junction

T

emperature (°C)

Normalised R

DS(on)

and V

GS(th)

v Temperature

On-resistance v gate-source

voltage

ZVN2110A

TYPICAL CHARACTERISTICS

500

400

500

400

300

300

200

V

D

S

=

25V

V

D

S

=

25V

200

100

100

0

0

0

0.2

0.4

0.6

0.8

1.0

0

2

4

6

8

10

V

GS

-Gate Source Voltage (Volts)

I

D(on)

– Drain Current (Amps

)

Transconductance v drain current

Transconductance v gate-source voltage

16

100

14

I

D=

1A

80

60

40

20

12

10

8

V

D

S

=

20V

50V

80V

C

iss

6

4

2

0

C

o

ss

C

rss

0

0

0.2 0.4 0.6

0.8 1.0 1.2

1.4 1.6 1.8

2.0 2.2 2.4

Q-Charge (nC)

10

20

40

50

30

V

DS

-Drain Source Voltage (Volts)

Gate charge v gate-source voltage

Capacitance v drain-source voltage