Diodes-Incorporated-ZVN4525E6TA
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ZVN4525E6
250V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
High voltage
Low on-resistance
Fast switching speed
Low
threshold
Low gate drive
Max I
D
V
(BR)DSS
Max R
DS(on)
T
A
= +25
°
C
250V
230mA
8.5
Ω
@ V
GS
= 10V
Complementary P-channel Type ZVP4525E6
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Description and Applications
This 250V enhancement mode N-channel MOSFET provides users
with a competitive specification. It offers efficient power handling
capability, high impedance and is free from thermal runaway and
thermally induced secondary breakdowns. Applications benefiting
from this device include a variety of Telecom and general high-
voltage circuits.
Mechanical Data
•
•
Case: SOT26
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.015 grams (Approximate)
SOT89 and SOT223 versions are also available.
•
•
•
•
•
•
•
Earth Recall and Dialing Switches
Electronic Hook Switches
High Voltage Power MOSFET Drivers
Telecom Call Routers
•
Solid State Relays
SOT26
Top View
Pinout Top-view
Device symbol
Ordering Information
(Note 4)
Part Number
ZVN4525E6TA
ZVN4525E6TC
Reel Size (inch)
Tape Width (mm)
Quantity Per Reel
3,000
10,000
7
13
8
8
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html fo
r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen and Antimony free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl)
and <1000ppm antimony compounds.
Marking Information
SOT26
N52 = Product Type Marking Code
YM = Date Code Marking
N52
Y or Y = Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
Date Code Key
Year
Code
2015
C
2016
D
2017
E
2018
F
2019
G
2020
H
2021
I
2022
J
2023
K
2024
L
2025
M
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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March 2015
© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
Maximum Ratings
(@T
A
= +25
°
C
, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
250
40
Unit
V
Gate-Source Voltage
V
V
GS
230
183
1.44
1.1
T
A
=+25
°
C
(
Note 4)
Continuous Drain Current
mA
V
GS
= 10V
I
D
T
A
=+70
°
C
(
Note 4)
Pulsed Drain Current (Note 6)
A
A
A
I
DM
I
S
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
1.44
I
SM
Thermal Characteristics
(@T
A
= +25
°
C
, unless otherwise specified.)
Characteristic
Power Dissipation at T
A
=+25
°
C
(
Note 4)
Linear Derating Factor
Symbol
Value
Unit
1.1
8.8
W
mW/
°
C
P
D
Junction to Ambient (Note 4)
Junction to Ambient (Note 5)
Operating and Storage Temperature Range
113
65
°
C
/W
°
C
/W
°C
R
θ
JA
R
θ
JA
-55 to +150
T
J
, T
STG
Notes:
4.
For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.
5.
For a device surface mounted on FR4 PCB measured at t
5 secs.
6.
Repetitive rating – pulse width limited by maximum junction temperature. Refer to Transient Thermal.
NB High Voltage Applications
For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between conductors.
Thermal Characteristics
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
Electrical Characteristics
(@ T
A
= +25
°
C
, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
250
–
285
35
1
–
V
BV
DSS
I
DSS
I
D
= 1mA, V
GS
= 0V
V
DS
= 250V, V
GS
= 0V
V
GS
40V, V
DS
= 0V
500
100
ν
A
nA
I
GSS
=
ON CHARACTERISTICS
Gate-Source Threshold Voltage
0.8
–
1.4
5.6
1.8
8.5
9.0
9.5
–
V
V
GS(th)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 500mA
Ω
Ω
Ω
Static Drain-Source On-State Resistance (Note 7)
5.9
R
DS (ON)
V
GS
= 4.5V, I
D
= 360mA
6.4
V
GS
= 2.4V, I
D
= 20mA
Forward Transconductance (Note 9)
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS
(Notes 8 & 9)
Input Capacitance
0.3
0.475
S
V
g
fs
V
DS
= 10V, I
D
= 0.3A
0.97
V
SD
T
J
=+25
°
C
, I
S
= 360mA, V
GS
= 0V
–
–
–
–
–
–
–
–
–
–
–
–
72
11
–
pF
pF
pF
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= 25 V, V
GS
= 0V
f = 1MHz
Output Capacitance
–
Reverse Transfer Capacitance
Total Gate Charge
3.6
–
3.65
0.28
0.7
260
48
–
2.6
V
GS
= 10V, V
DS
= 25V
Gate-Source Charge
0.2
Q
gs
Q
gd
t
rr
I
D
= 360mA(refer to test circuit)
Gate-Drain Charge
0.5
Reverse Recovery Time (Note 9)
Reverse Recovery Charge (Note 9)
Turn-On Delay Time
186
34
T
J
=+25
°
C
, IF=360A,
di/dt= 100A/
µ
s
nC
ns
Q
rr
1.25
1.7
t
d(on)
t
r
t
d(off)
t
f
V
DD
= 30V, V
GS
= 10V
Turn-On Rise Time
–
ns
I
D
= 360mA, R
G
= 50
Ω
(refer to test circuit)
Turn-Off Delay Time
11.40
3.5
–
ns
Turn-Off Fall Time
–
ns
Notes:
7. Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2%.
8. Switching characteristics are independent of operating junction temperature.
9. For design aid only, not subject to production testing.
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
Typical Characteristics
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
Typical Characteristics
(continued)
Test Circuits
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
Package Outline Dimensions
A
SOT26
Dim Min Max
Typ
A
B
C
D
H
J
K
L
M
α
0.35 0.50
0.38
1.50 1.70
1.60
2.70 3.00
2.80
0.95
B
C
2.90 3.10
3.00
0.013 0.10 0.05
1.00 1.30
1.10
0.35 0.55
0.40
0.10 0.20
0.15
H
K
J
M
0°
8°
L
D
All Dimensions in mm
Suggested Pad Layout
C2
C2
Dimensions Value
(in mm)
Z
G
3.20
1.60
0.55
0.80
2.40
0.95
C1
G
Y
X
Z
Y
C1
C2
X
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
ZVN4525E6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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© Diodes Incorporated
ZVN4525E6
Datasheet Number: DS33381 Rev. 2 – 2
