Diodes-Incorporated-ZVP3306A

Part #	Diodes-Incorporated-ZVP3306A
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P-CHANNEL ENHANCEMENT

MODE VERTICAL DMOS FET

ISSUE 2 MARCH 94

ZVP3306A

FEATURES

*

*

60 Volt V

DS

R

DS(on)

=14

Ω

D

G

S

E-Line

TO92 Compatible

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V

DS

VALUE

UNIT

V

Drain-Source Voltage

-60

-160

Continuous Drain Current at T

am

b

=25°C

Pulsed Drain Current

I

D

mA

A

I

DM

-1.6

Gate Source Voltage

V

GS

V

±

20

Power Dissipation at T

am

b

=25°C

Operating and Storage Temperature Range

P

tot

625

mW

°C

T

j

:T

stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C unless otherwise stated).

amb

SYMBOL MIN.

MAX. UNIT

CONDITIONS.

PARAMETER

Drain-Source Breakdown

Voltage

BV

DSS

-60

V

I

D

=-1mA, V

G

S

=0V

ID=-1mA, V

D

S

= V

GS

V

G

S

=

±

20V, V

D

S

=0V

Gate-Source Threshold

Voltage

V

GS(th)

-1.5

-3.5

20

V

Gate-Body Leakage

I

GSS

I

DSS

nA

Zero Gate Voltage Drain

Current

-0.5

-50

V

D

S

=-60 V, V

G

S

=0

µ

A

µ

A

V

D

S

=-48 V, V

G

S

=0V, T=125°C

(2)

On-State Drain Current(1)

I

D(on)

-400

60

mA

V

D

S

=-18 V, V

G

S

=-10V

V

G

S

=-10V,I

D

=-200mA

Static Drain-Source On-State

R

DS(on)

Resistance (1)

14

Ω

Forward Transconductance

(1)(2)

g

fs

mS

V

D

S

=-18V,I

D

=-200mA

Input Capacitance (2)

C

iss

50

25

pF

pF

Common Source Output

Capacitance (2)

C

oss

V

D

S

=-18V, V

G

S

=0V, f=1MHz

Reverse Transfer

Capacitance (2)

C

rss

8

pF

Turn-On Delay Time (2)(3)

Rise Time (2)(3)

t

d(on)

t

r

t

d(off)

t

f

8

8

8

8

ns

ns

ns

ns

V

DD

≈

-18V, I

D

=-200mA

Turn-Off Delay Time (2)(3)

Fall Time (2)(3)

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2%

(2) Sample test.

(

3

)

3-429

Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator

ZVP3306A

TYPICAL CHARACTERISTICS

-1.2

V

GS=

-20V

V

GS

=

-1.0

-0.8

-0.6

-16V

-14V

-1.0

-0.8

-16V

-14V

-12V

-12V

-10V

-10V

-0.6

-0.4

-0.2

-9V

-9V

-8V

-8V

-0.4

-7V

-6V

-7V

-6V

-0.2

0

-5V

-4V

-50

-5V

-4.5V

0

0

-10

-20

-30

-40

0

-2

-4

-6

-8

-10

V

DS

– Drain Source

V

o

l

tage (

V

o

l

ts)

V

DS

– Drain Source

V

o

l

tage (

V

o

l

ts)

Output Characteristics

Saturation Characteristics

-1.0

-10

-8

-6

-4

-2

0

-0.8

-0.6

-0.4

-0.2

V

D

S

=

–

10V

I

D=

–

400m A

-200m A

-100mA

0

0

-2

-4

-6

-8

-10

0

-2

-4

-6

-8

-10

V

GS-

Gate Source Voltage

(

V

o

l

ts)

V

GS

–

Gate Source

V

o

l

tage (

V

o

l

t

s

)

Transfer Characteristics

Voltage Saturation Characteristics

2.6

100

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

V

GS

=-5V

V

GS=

-10V

-6V

-7V

I

D=

0.37A

-10V

-15V

10

-20V

V

GS=

V

DS

I

D=

-1m A

1

-40

120

140 160 180

-10

-20

0

20 40 60 80 100

-100

-1000

I

D-

Drain Current (m A)

Junction

T

e

mperature (°C)

Normalised R

DS(on)

and V

GS(th)

vs Temperature

3-430

On-resistance vs Drain Current

ZVP3306A

TYPICAL CHARACTERISTICS

120

100

80

120

100

80

Note

:

V

D

S

=

-10V

Note:

V

D

S

=

-10V

60

40

20

0

60

40

20

0

0

-0.1 -0.2

-0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0

0

-1 -2

-3

-4 -5 -6

-7 -8

-9 -10

V

GS

-Gate Source Voltage (Volts)

D

I –

Drain Current (Amps

)

Transconductance v drain current

Transconductance v gate-source voltage

60

50

2

1

Note:

V

GS=

0V

f=1MHz

Note

:

I

D=-

0.2A

0

40

30

20

10

0

-2

V

D

S

=

-4

-6

C

i

s

s

-20V -40V

-60V

-8

C

o

ss

-10

-12

-14

-16

C

rss

0

-10

-20

-30

-40

-50

-60

-70

0

0.5

1.0

1.5

V

DS

-Drain Source Voltage (Volts)

Q-Gate Charge (nC)

Capacitance v drain-source voltage

Gate charge v gate-source voltage

3-431