Diodes-Incorporated-ZVP3306FTA

SOT23 P-CHANNEL ENHANCEMENT  

MODE VERTICAL DMOS FET  

ISSUE 3 – JANUARY 1996  

ZVP3306F  

FEATURES  

*

*

60 Volt V

DS  

D

S

R

DS(on)

=14

Ω

 

PARTMARKING DETAIL – ML  

G

COMPLEMENTARY TYPE – ZVN3306F  

SOT23  

ABSOLUTE MAXIMUM RATINGS.  

PARAMETER  

SYMBOL  

V

DS  

VALUE  

-60  

UNIT  

V

Drain-Source Voltage  

Continuous Drain Current at T

am

b

=25°C  

Pulsed Drain Current  

I

D  

-90  

mA  

A

I

DM  

-1.6  

Gate Source Voltage  

V

GS  

V

±

20  

Power Dissipation at T

am

b

=25°C  

Operating and Storage Temperature Range  

P

tot  

330  

mW  

°C  

T

j

:T

stg  

-55 to +150  

ELECTRICAL CHARACTERISTICS (at T  

= 25°C unless otherwise stated).  

amb  

PARAMETER  

SYMBOL MIN.

 

MAX. UNIT

 

CONDITIONS.  

Drain-Source  

Breakdown Voltage  

BV

DSS  

-60  

V

I

D

=-1mA, V

G

S

=0V  

I

D

=-1mA, V

D

S

= V

GS  

V

G

S

=

±

20V, V

D

S

=0V  

Gate-Source Threshold  

Voltage  

V

GS(th)  

-1.5 -3.5  

20  

V

Gate-Body Leakage  

I

GSS  

I

DSS  

nA  

Zero Gate Voltage Drain  

Current  

-0.5  

-50  

V

D

S

=-60 V, V

G

S

=0V  

V

D

S

=-48 V, V

G

S

=0V, T=125°C

(2)  

µ

A  

µ

A  

On-State Drain Current(1)  

I

D(on)  

-400  

14  

mA  

V

D

S

=-18 V, V

G

S

=-10V  

Static Drain-Source On-State

 

R

DS(on)  

Resistance (1)  

V

G

S

=-10V, I

D

=-200mA  

Ω

Forward Transconductance  

(1)(2)  

g

fs  

60  

mS  

V

D

S

=-18V, I

D

=-200mA  

Input Capacitance (2)  

C

iss  

50  

25  

pF  

pF  

Common Source Output  

Capacitance (2)  

C

oss  

V

D

S

=-18V, V

G

S

=0V, f=1MHz  

Reverse Transfer Capacitance (2)

 

C

rss  

8

8

8

8

8

pF  

ns  

ns  

ns  

ns  

Turn-On Delay Time (2)(3)  

Rise Time (2)(3)  

t

d(on)  

t

r  

t

d(off)  

t

f  

V

D

D

≈

-18V, I

D

=-200mA  

Turn-Off Delay Time (2)(3)  

Fall Time (2)(3)  

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle

≤

2% (2)

 

Sample test.  

(3) Switching times measured with 50

Ω

source impedance and <5ns rise time on a pulse generator  

Spice parameter data is available upon request for this device  

3 -434  

ZVP3306F  

TYPICAL CHARACTERISTICS  

V

=

-16V  

-14V  

I

-400mA  

-12V  

-10V  

-9V  

-8V  

-7V  

-6V  

-200mA  

-100mA  

-5V  

-4.5V  

V

– Drain Source

V

oltage (Volts)  

V

Gate Source Voltage

 

(

V

o

lts)  

Voltage Saturation Characteristics  

Saturation Characteristics  

Note:V 0V  

f=1MHz  

Note:I 0.2A  

V

=

-20V  

C

-40V -60V  

C

C

V

-Drain Source Voltage (Volts)  

Q-Gate Charge (nC)  

Capacitance v drain-source voltage  

Gate charge v gate-source voltage  

V

=-5V  

-6V  

V

I

-10V  

0.37A  

-7V  

-10V  

-15V  

-20V  

V

I

V

-1mA  

I

Drain Current (mA)  

Junction

T

e

mperature (°C)  

Normalised R

DS(on)

and V

GS(th)

vs Temperature  

On-resistance vs Drain Current  

3 – 435