Diodes-Incorporated-ZXM61N03FTA
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ZXM61N03F
30V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=30V; R
DS(ON)
=0.22
⍀
;
I
D
=1.4A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
SOT23
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23 package
APPLICATIONS
•
•
•
•
DC – DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
Top View
ZXM61N03FTA
ZXM61N03FTC
7
8mm embossed
8mm embossed
3000 units
10000 units
13
DEVICE MARKING
•
N03
ISSUE
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ZXM61N03F
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
DSS
V
GS
LIMIT
30
UNIT
Drain-Source Voltage
Gate Source Voltage
V
V
A
±
20
Continuous Drain Current (V
G
S
=10V; T
A
=25°C)(b)
I
D
1.4
1.1
(V
G
S
=10V; T
A
=70°C)(b)
Pulsed Drain Current (c)
I
DM
I
S
7.3
0.8
7.3
A
A
A
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode)
I
SM
P
D
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
625
5
mW
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
806
6.4
mW
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
R
θ
JA
VALUE
200
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
θ
JA
155
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р
5 secs.
(c) Repetitive rating – pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
ISSUE
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ZXM61N03F
CHARACTERISTICS
10
1.0
0.8
0.6
0.4
0.2
0
Refer Note (a)
Refer Note (b)
R
e
fer Note (a)
1
DC
1s
100ms
10ms
1ms
100m
100us
10m
0.1
1
10
100
0
20
40
60
80
100 120 140 160
V
DS
– Drain-Source Voltage (V)
T –
T
emperature (°C)
Safe Operating Area
Derating Curve
180
160
140
120
100
80
240
200
160
120
80
Refer Note (b)
R
e
fer Note (a)
D=0.5
D=0.5
60
D=0.2
40
D=0.2
40
D=0.1
D=0.05
D=0.1
20
Single Pulse
Single Pulse
D=0.05
0
0
0.0001
0.001
0.01
0.1
1
10
0.0001 0.001
0.01
0.1
1
10
100 1000
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
T
r
ansient Thermal Impedance
ISSUE
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ZXM61N03F
ELECTRICAL CHARACTERISTICS
(at T
= 25°C unless otherwise stated).
A
PARAMETER
SYMBOL MIN.
TYP.(3) MAX.
UNIT CONDITIONS.
STATIC
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
(BR)DSS
30
I
DSS
V
I
D
=250
µ
A, V
G
S
=0V
V
D
S
=30V, V
G
S
=0V
V
G
S
=
±
20V, V
D
S
=0V
I
D
=250
µ
A, V
D
S
= V
GS
1
µ
A
nA
V
I
GSS
100
Gate-Source Threshold Voltage
V
G
S(th)
R
DS(on)
1.0
Static Drain-Source On-State Resistance
(1)
0.22
0.30
V
G
S
=10V, I
D
=0.91A
V
G
S
=4.5V, I
D
=0.46A
Ω
Ω
Forward Transconductance (3)
DYNAMIC
(3)
g
fs
0.87
S
V
D
S
=10V,I
D
=0.46A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
150
35
pF
pF
pF
V
D
S
=25 V, V
G
S
=0V,
f=1MHz
15
t
d(on)
t
r
t
d(off)
t
f
1.9
2.5
5.8
3.0
4.1
0.4
0.63
ns
ns
ns
ns
nC
nC
nC
V
DD
=15V, I
D
=0.91A
R
G
=6.2
Ω
, R
D
=16
Ω
(refer to test
circuit)
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Q
g
V
D
S
=24V,V
G
S
=10V,
I
D
=0.91A
(refer to test
circuit)
Q
gs
Q
gd
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
V
SD
0.95
V
T
J
=25°C, I
S
=0.91A,
V
G
S
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge (3)
NOTES
t
rr
11.0
3.5
ns
T
J
=25°C, I
F
=0.91A,
di/dt= 100A/
µ
s
Q
rr
nC
(1) Measured under pulsed conditions. Width
≤
300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE
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ZXM61N03F
TYPICAL CHARACTERISTICS
VGS
9V
5V
10
1
VGS
10
+150°C
+25°C
5V
4V
4V
1
3.5V
3V
100m
3V
2.5V
100m
10m
1m
10m
1m
2.5V
2.0V
100u
0.01
0.1
1
10
100
0.1
1
10
V
DS
– Drain-Source Voltage (V)
DS
V
– Drain-Source Voltage (V)
Ouput Characteristics
Output Characteristics
10
1
2.0
VDS=10V
RDS(on)
1.5
VGS=10V
ID=0.91A
1.0
0.5
0
VGS=VDS
ID=250uA
0.1
0.01
T=150°C
T=25°C
VGS(th)
1.5
2.5
3.5
-100
-50
0
50
100
150
200
GS
j
T
– Junction Temperature (°C)
V
– Gate-Source Voltage (V)
Typical Transfer Characteristics
Normalised R
DS(on)
and V
GS(th)
v
T
e
mperature
10
100
10
1
1
100m
VGS=4.5V
VGS=10V
10m
1m
T=150°C
T=25°C
0.1
100µ
I
D
–
1
Drain Current (A)
10
0.1
100
0
0.2
SD
0.4
0.6
0.8
1.0
1.2
V
– Source-Drain Voltage (V)
On-Resistance v Drain Current
Source-Drain Diode
Forward Voltage
ISSUE
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ZXM61N03F
TYPICAL CHARACTERISTICS
10
250
200
150
100
50
Vgs=0V
f=1MHz
ID=0.91A
Ciss
VDS=24V
8
Coss
Crss
6
4
2
0
0
0.1
1
10
100
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VDS – Drain-Source Voltage (V)
Q – Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
Switching Time Waveforms
Switching Time
T
e
st Circuit
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ZXM61N03F
PACKAGE DIMENSIONS
PAD LAYOUT DETAILS
DIM Millimetres
Min
Inches
Max
3.05
1.40
1.10
0.53
0.15
Min
Max
A
B
C
D
F
2.67
0.105
0.120
0.055
0.043
0.021
0.0059
1.20
0.047
–
–
0.37
0.0145
0.0033
NOM 0.075
0.0004
0.0825
NOM 0.037
0.085
NOM 1.9
0.01
G
K
L
0.10
2.50
0.004
2.10
0.0985
N
NOM 0.95
Zetex plc.
Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
3510 Metroplaza, Tower 2
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
These are supported by
agents and distributors in
major countries world-wide
Zetex plc 1999
Streitfeldstraße 19
D-81673 München
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
47 Mall Drive, Unit 4
Commack NY 11725
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
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