Diodes-Incorporated-ZXM61P02F
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ZXM61P02F
20V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Fast switching speed
Low on-resistance
Low threshold
I
D
V
(BR)DSS
R
DS(on)
T
A
= +25
C
Low gate drive
-0.92A
-0.75A
600m
Ω
@ V
GS
= -4.5V
900m
Ω
@ V
GS
= -2.7V
-20V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Description and Applications
Case: SOT23
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
DC – DC converters
Power management functions
Disconnect switches
Motor control
Weight: 0.008 grams (approximate)
SOT23
D
S
G
D
G
S
Top View
Equivalent Circuit
Top View
Pin Out
Ordering Information
(Note 4)
Product
ZXM61P02FTA
Marking
P02
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3000 Units
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. S
ee http://www.diodes.com/quality/lead_free.html for
more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
P02 = Product Type Marking Code
P02
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ZXM61P02F
Document Number DS33478 Rev. 3 – 2
ZXM61P02F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
-20
Units
V
V
Gate-Source Voltage
±12
V
GS
T
A
= +25°C (Note 6)
T
A
= +70°C (Note 6)
-0.9
-0.7
Continuous Drain Current
A
V
GS
= 4.5V
I
D
Pulsed Drain Current (Note 7)
-4.9
-0.9
-4.9
A
A
A
I
DM
I
S
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 7)
I
SM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
625
5
806
6.4
Unit
mW
mW/°C
mW
mW/°C
Power Dissipation (Note 5)
Linear Derating Factor
Power Dissipation (Note 6)
Linear Derating Factor
P
D
P
D
Thermal Resistance, Junction to Ambient (Note 5)
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
200
155
°C/W
°C/W
°C
R
θ
JA
R
θ
JA
-55 to +150
T
J,
T
STG
Notes:
5. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
6. For a device surface mounted on FR4 PCB measured at t
≤
5 secs.
7. Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10
μ
s – pulse current limited by maximum junction temperature.
Thermal Characteristics
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ZXM61P02F
Document Number DS33478 Rev. 3 – 2
ZXM61P02F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-20
V
BV
DSS
I
DSS
-0.1
I
D
= -250
μ
A, V
GS
= 0V
μ
A
nA
V
DS
= -20V, V
GS
= 0V
±100
I
GSS
V
GS
=
12V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-0.7
-1.5
0.6
0.9
V
V
GS(th)
I
D
= -250
A, V
DS
= V
GS
V
GS
= -4.5V, I
D
= -0.61A
Static Drain-Source On-Resistance (Note 8)
Ω
R
DS (ON)
V
GS
= -2.7V, I
D
= -0.31A
Forward Transconductance (Notes 8 and 10)
Diode Forward Voltage (Note 8)
Reverse Recovery Time (Note 10)
Reverse Recovery Charge (Note 10)
DYNAMIC CHARACTERISTICS
(Note 10)
Input Capacitance
0.56
S
V
g
fs
V
SD
t
rr
14.9
V
DS
= -10V, I
D
= -0.31A
-0.95
T
J
= +25°C, I
S
= -0.61A, V
GS
= 0V
ns
nC
T
J
= +25°C, I
F
= -0.61A,
di/dt = 100A/
μ
s
5.6
Q
rr
150
70
C
iss
C
oss
C
rss
t
d(on)
t
r
V
DS
= -15V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
30
2.9
6.7
11.2
10.1
3.5
0.5
1.5
V
DD
= -110V, I
D
= -0.93A,
R
G
6.2
Ω
R
D
11
Ω
t
d(off)
t
f
Total Gate Charge (Note 9)
Q
g
V
DS
= -16V, V
GS
= -4.5V,
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
nC
Q
gs
Q
gd
I
D
= -0.61A
Notes:
8. Measured under pulsed conditions. Pulse width = 300
μ
s. Duty cycle
≤
2%.
9. Switching characteristics are independent of operating junction temperature.
10. For design aid only, not subject to production testing.
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ZXM61P02F
Document Number DS33478 Rev. 3 – 2
ZXM61P02F
Typical Characteristics
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Document Number DS33478 Rev. 3 – 2
ZXM61P02F
Typical Characteristics – continued
Test Circuits
C
u
rrent
regulator
Q
G
50k
0.2
m
F
Sa
m
e as
D.U.T
12V
Q
G
S
Q
G
D
V
G
V
DS
I
G
D.U.T
I
D
V
GS
C
h
arge
Basic gate charge
w
a
veform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
DD
10%
V
G
S
P
u
l
s
e
w
idt
h
,
1
m
S
Du
t
y f
a
c
t
or 0.1%
t
r
t
d(of )
t
r
t
d(on)
t
(on)
t
(on)
S
w
i
tching time
w
a
veforms
S
w
i
tching time test circuit
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ZXM61P02F
Document Number DS33478 Rev. 3 – 2
ZXM61P02F
Package Outline Dimensions
A
ll
7
°
SOT23
H
Dim
A
B
C
D
F
G
H
J
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.37
1.20
2.30
0.89
0.45
1.78
2.80
0.40
1.30
2.40
J
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
Suggested Pad Layout
ꢀ
Y
Dimensions Value
(in mm)
Z
2.9
0.8
0.9
2.0
1.35
Z
C
X
Y
C
E
E
X
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ZXM61P02F
Document Number DS33478 Rev. 3 – 2
ZXM61P02F
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
ZXM61P02F
Document Number DS33478 Rev. 3 – 2
