Diodes-Incorporated-ZXM64P02XTA
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ZXM64P02X
20V P-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
V
(BR)DSS
=-20V; R
DS(ON)
=0.090
⍀
;
I
D
= -3.5A
DESCRIPTION
This new generation of high density MOSFETs from Zetex utilises a unique
structure that combines the benefits of low on-resistance with fast switching
speed. This makes them ideal for high efficiency, low voltage, power
management applications.
MSOP8
FEATURES
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
Low profile SOIC package
APPLICATIONS
•
•
•
•
DC – DC Converters
Power Management Functions
Disconnect switches
Motor control
D
S
S
S
G
ORDERING INFORMATION
D
D
D
DEVICE
REEL SIZE
(inches)
TAPE WIDTH (mm)
QUANTITY
PER REEL
ZXM64P02XTA
ZXM64P02XTC
7
12mm embossed
12mm embossed
1000 units
4000 units
Top View
13
DEVICE MARKING
•
ZXM
6
4P02
I
ssue 2
–
February 2008
1
ZXM64P02X
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
V
DSS
V
GS
LIMIT
-20
UNIT
Drain-Source Voltage
Gate- Source Voltage
V
V
A
±
12
Continuous Drain Current (V
G
S
=4.5V; T
A
=25°C)(b)
(V
G
S
=4.5V; T
A
=70°C)(b)
I
D
-3.5
-2.8
Pulsed Drain Current (c)
I
DM
I
S
-19
-2.0
-19
A
A
A
Continuous Source Current (Body Diode)(b)
Pulsed Source Current (Body Diode)(c)
I
SM
P
D
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
1.1
8.8
W
mW/°C
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
P
D
1.8
14.4
W
mW/°C
Operating and Storage Temperature Range
T
j
:T
stg
-55 to +150
°C
THERMAL RESISTANCE
PARAMETER
SYMBOL
R
θ
JA
VALUE
113
UNIT
°C/W
°C/W
Junction to Ambient (a)
Junction to Ambient (b)
R
θ
JA
70
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t
р
10 secs.
(c) Repetitive rating – pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
I
ssue 2
–
February 2008
2
ZXM64P02X
CHARACTERISTICS
100
10
2.0
Refer Note (a)
1.5
1.0
0.5
0
Refer Note (b)
Refer Note (a)
DC
1s
100ms
10ms
1ms
1
100us
100m
0.1
1
10
100
0
20
40
60
80 100
120 140 160
-V
DS
– Drain-Source Voltage (V)
T –
T
e
mperature (
°C)
Safe Operating Area
Derating Curve
80
60
40
20
120
90
Refer Note (b)
Refer Note (a)
D=0.5
60
D=0.5
D=0.2
30
D=0.2
D=0.1
D=0.1
Single Pulse
Single Pulse
0
0
0.0001 0.001
0.01
0.1
1
10
100
0.0001 0.001
0.01
0.1
1
10
100 1000
Pulse Width (s)
Pulse Width (s)
T
r
ansient Thermal Impedance
T
r
ansient Thermal Impedance
I
ssue 2 – February 2008
3
ZXM64P02X
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
TYP.
MAX. UNIT
CONDITIONS.
STATIC
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
V
(BR)DSS
-20
I
DSS
V
I
D
=-250
µ
A, V
G
S
=0V
V
D
S
=-20V, V
G
S
=0V
V
G
S
=
±
12V, V
D
S
=0V
I
D
=-250
µ
A, V
D
S
= V
GS
-1
µ
A
nA
V
I
GSS
±
100
Gate-Source Threshold Voltage
V
GS(th)
R
DS(on)
-0.7
2.6
Static Drain-Source On-State Resistance
(1)
0.090
0.13
V
V
G
S
=-4.5V, I
D
=-2.4A
G
S
=-2.7V, I
D
=-1.2A
Ω
Ω
Forward Transconductance (3)
DYNAMIC
(3)
g
fs
S
V
D
S
=-10V,I
D
=-1.2A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
Turn-On Delay Time
Rise Time
C
iss
C
oss
C
rss
900
350
150
pF
pF
pF
V
D
S
=-15 V, V
G
S
=0V,
f=1MHz
t
d(on)
t
r
t
d(off)
t
f
5.6
ns
ns
ns
ns
nC
nC
nC
12.3
45.5
40.0
V
DD
=-10V, I
D
=-2.4A
R
G
=6.0
Ω
, R
D
=4.0
Ω
(Refer to test circuit)
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage (1)
Q
g
6.9
1.3
2.5
V
D
S
=-16V,V
G
S
=-4.5V,
Q
gs
Q
gd
I
D
=-2.4A
(Refer to test circuit)
V
SD
-0.95
V
T
j
=25°C, I
S
=-2.4A,
V
G
S
=0V
Reverse Recovery Time (3)
Reverse Recovery Charge(3)
t
rr
46.0
35.0
ns
T
j
=25°C, I
F
=-2.4A,
di/dt= 100A/
µ
s
Q
rr
nC
(1) Measured under pulsed conditions. Width=300
µ
s. Duty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
I
ssue 2
–
February 2008
4
ZXM64P02X
TYPICAL CHARACTERISTICS
100
10
1
100
+150°C
+25 C
5V 4.5V 4V
3.5V
-VGS
3V
2.5V
5V 4.5V 4V
3.5V 3V
-VGS
2.5V
10
1
2V
2V
1.5V
1.5V
0.1
0.1
0.1
1
10
100
0.1
1
10
100
200
1.4
-V
DS
– Drain-Source Voltage (V)
Output Characteristics
-V
DS
– Drain-Source Voltage (V)
Output Characteristics
100
10
1
1.6
1.4
VDS=-10V
R
D
S
(on)
VGS=-4.5V
ID=-2.4A
1.2
1.0
0.8
0.6
0.4
T=150°C
T=25°C
VGS=VDS
ID=-250uA
VGS(th)
0.1
0.5
1
GS
1.5
2
2.5
3
3.5
-100
-50
0
50
100
150
-V –
Gate-Source Voltage (V)
T
– Junction
T
e
mperature (°C)
j
Typical
T
r
ansfer Characteristics
Normalised R
and V
GS(th)
DS(on)
v
T
e
mperature
10
1
100
10
1
VGS=-2V
VGS=-5V
0.1
0.01
T=150°C
T=25°C
0.1
0.1
1
10
100
0.2
0.4
0.6
0.8
1.0
1.2
-I –
Drain Current (A)
D
-V –
Source-Drain Voltage (V)
SD
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
I
ssue 2 – February 2008
5
ZXM64P02X
TYPICAL CHARACTERISTICS
2000
1800
1600
1400
1200
1000
800
5
ID=-2.4A
Vgs=0V
f=1Mhz
4.5
4
VDS=-15V
Ciss
Coss
Crss
3.5
3
2.5
2
600
1.5
1
400
200
0.5
0
0
0.1
1
10
100
0
1
2
3
4
5
6
-V
DS
– Drain Source Voltage (V)
Q -Charge (nC)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Gate Charge Test Circuit
Basic Gate Charge Waveform
Switching Time
T
e
st Circuit
Switching Time Waveforms
I
ssue 2 – February 2008
6
ZXM64P02X
PACKAGE DIMENSIONS
DIM
Millimetres
Inches
MIN
D
MIN
MAX
MAX
0.043
0.006
0.016
0.009
0.122
BSC
A
A1
B
1.10
0.15
0.40
0.23
3.10
BSC
3.10
BSC
0.70
6°
8
1
7
2
6
3
5
4
0.05
0.25
0.13
2.90
0.65
2.90
4.90
0.40
0°
0.002
0.010
0.005
0.114
0.0256
0.114
0.193
0.016
0°
C
e X 6
D
e
θ°
E
0.122
BSC
L
B
C
H
L
0.028
6°
Conforms to JEDEC MO-187 Iss A
q°
PAD LAYOUT DETAILS
Zetex plc.
Chadderton Technology Park,
Chadderton, Oldham, OL9-
9LL
, United Kingdom.
Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)
Fax: (44)161 622 4420
Zetex GmbH
Zetex Inc.
Zetex (Asia) Ltd.
These are supported by
t
Kustermann-park
D-81
541
Münche
n
Germany
Telefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
7
00 Veteran Mem. Highway
Hauppauge, NY, 11788
USA
Telephone: (516) 543-7100
Fax: (516) 864-7630
Metroplaza, Tower
1
Hing Fong Road,
Kwai Fong, Hong Kong
Telephone:(852) 26100 611
Fax: (852) 24250 494
agents and distributors in
m
ajor countries world-wide
Zetex plc 1999
This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any
purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the
right to alter without notice the specification, design, price or conditions of supply of any product or service.
I
ssue 2 – February 2008
7
