Diodes-Incorporated-ZXMHC3A01T8TA
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Green
ZXMHC3A01T8
COMPLEMENTARY 30V ENHANCEMENT MODE MOSFET H-BRIDGE
Product Summary
Features
Low On-Resistance
I
D
max
T
A
= +25°C
Fast Switching Speed
Device
BV
DSS
R
DS(ON)
max
Low Threshold
N-Channel
P-Channel
30V
0.12
Ω @ V
GS
= 10V
0.21
Ω
@ V
GS
= -10V
3.1A
Low Gate Drive
-30V
-2.3A
Single SM-8 Surface Mount Package
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
This new generation of trench MOSFETs from Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low
voltage, power management applications.
Mechanical Data
Case: SM-8 (8 LEAD SOT223)
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections Indicator: See Diagram
Terminals: Finish
Matte Tin Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.117 grams (Approximate)
Applications
Single Phase DC Fan Motor Drive
SM-8
H-Bridge
Top View
Pin Configuration
Top View
Internal Schematic
Ordering Information
(Note 4)
Part Number
REEL SIZE
TAPE WIDTH
QUANTITY PER REEL
ZXMHC3A01T8TA
7
’’
12mm
1,000 units
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<
1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SM-8
ZXMHC3A01 = Product Type Marking Code
YWW = Date Code Marking
Y or Y = Last Digit of Year (ex: 5= 2015)
WW or WW = Week Code (01~53)
ZXMH
C3A01
1 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
N-channel
30
P-channel
-30
Units
V
V
±20
Gate-Source Voltage
±20
V
GSS
-2.3
-1.8
-2.0
T
A
= +25°C (Note 6 & 8)
3.1
2.5
2.7
Steady
State
A
Continuous Drain Current, V
GS
= 10V (Note 8)
T
A
= +70°C (Note 6 & 8)
T
A
= +25°C (Note 5 & 8)
I
D
-2.2
-10.8
-10.8
Continuous Source Current (body diode) (Note 6)
Pulsed Drain Current (Note 7)
2.3
A
A
A
I
S
14.3
14.5
I
DM
I
SM
Pulsed Source Current (Note 7)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
Total Power Dissipation (Note 8)
Linear Derating Factor
1.3
10.4
W
mW/°C
T
A
= +25°C (Note 5)
P
D
1.7
13.6
W
mW/°C
Total Power Dissipation (Note 8)
Linear Derating Factor
T
A
= +25°C (Note 6)
P
D
Steady State (Note 5)
Steady State (Note 6)
96
73
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 8)
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J,
T
STG
Notes:
5. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions..
6. For a device surface mounted on FR4 PCB measured at t
seconds.
7. Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D = 0.02, pulse width 300
μ
s – pulse width limited by maximum junction temperature. Refer to transient
thermal Impedance graph.
8. For device with one active die.
2 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Electrical Characteristics
N-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
30
—
—
—
1.0
100
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= 250μA
V
DS
= 30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
μ
A
nA
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
1.0
—
—
—
—
—
—
3.0
0.12
0.18
—
V
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μA
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
V
DS
= 4.5V, I
D
= 2.5A
V
GS
= 0V, I
S
= 1.7A
Static Drain-Source On-Resistance (Note 9)
Ω
R
DS (ON)
—
Forward Transfer Admittance (Notes 9 & 11)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS
(Note 11)
Input Capacitance
3.5
—
S
V
g
fs
0.95
V
SD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
190
38
C
iss
C
oss
C
rss
Q
g
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
Output Capacitance
pF
nC
Reverse Transfer Capacitance
Total Gate Charge (Note 10)
Gate-Source Charge (Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time
20
3.9
0.6
0.9
1.7
2.3
6.6
2.9
17.7
13
V
DS
= 15V, I
D
= 2.5A, V
GS
= 10V
Q
gs
Q
gd
t
D(on)
t
r
V
DD
= 15V, V
GS
= 10V,
I
D
= 2.5A,
R
G
6.0
Ω
,
ns
t
D(off)
t
f
Reverse Recovery Time
ns
t
rr
I
S
= 1.8A, di/dt = 100A/
μ
s
Reverse Recovery Charge
nC
Q
rr
Electrical Characteristics
P-CHANNEL
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
—
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-30
—
V
BV
DSS
I
DSS
V
GS
= 0V, I
D
= –
250μA
V
DS
= -30V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
-1.0
100
μ
A
nA
—
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
-1.0
—
—
—
-3.0
0.21
0.33
—
V
V
GS(th)
V
DS
= V
GS
, I
D
= -250
μA
V
GS
= -10V, I
D
= -1.4A
V
GS
= -4.5V, I
D
= -1.1A
V
DS
= -15V, I
D
= -1.4A
V
GS
= 0V, I
S
= -1.1A
Static Drain-Source On-Resistance (Note 9)
Ω
R
DS (ON)
—
—
—
Forward Transfer Admittance (Notes 9 & 11)
Diode Forward Voltage (Note 9)
DYNAMIC CHARACTERISTICS
(Note 11)
Input Capacitance
2.5
-0.85
S
V
g
fs
—
-0.95
V
SD
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
204
39.8
25.8
2.6
5.2
0.7
0.9
1.2
2.3
12.1
7.5
19
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
V
DS
= -15V, V
GS
= 0V,
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Gate Charge (V
GS
= -5.0V) (Note 10)
Total Gate Charge (V
GS
= -10V) (Note 10)
Gate-Source Charge
(Note 10)
Gate-Drain Charge (Note 10)
Turn-On Delay Time (Note 10)
Turn-On Rise Time (Note 10)
Turn-Off Delay Time (Note 10)
Turn-Off Fall Time
Q
g
V
DS
= -15V, I
D
= -1.4A,
Q
gs
Q
gd
t
D(on)
t
r
ns
V
DD
= -15V, V
GS
= -10V,
R
G
6.0
Ω
, I
D
= -1.0A
ns
t
D(off)
t
f
ns
Reverse Recovery Time
ns
t
rr
I
S
= -0.95A, di/dt = 100A/
μ
s
Reverse Recovery Charge
15
nC
Q
rr
Notes:
9.
Measured under pulsed conditions. Width≤300μs. Duty cycle ≤
2%.
10. Switching characteristics are independent of operating junction temperature.
11. For design aid only, not subject to production testing.
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March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
4 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Typical Characteristics
N-CHANNEL
5 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Typical Characteristics
N-CHANNEL
6 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Typical Characteristics
P-CHANNEL
7 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Typical Characteristics
P-CHANNEL
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March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
Package Outline Dimensions
A1
A
Seating Plane
SM-8
Dim Min Max
D
e1
Typ
1.60
0.04
0.80
0.28
6.60
A
A1
b
—
1.70
0.02 0.10
0.70 0.90
0.24 0.32
6.30 6.70
L
c
D
e
e1
E
1.53 REF
4.59 REF
6.70 7.30
ø
7.00
3.50
0.90
45°
—
E
E1
E1
L
Ø
Ø1
Ø2
3.30 3.70
0.75 1.00
ø1
—
—
—
—
15°
—
c
10°
All Dimensions in mm
e
b
ø2
Suggested Pad Layout
Y
Dimensions Value
(in mm)
C
C1
X
Y
Y1
1.52
4.60
0.95
2.80
6.80
C1
Y1
C
X
9 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
ZXMHC3A01T8
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
10 of 10
March 2015
© Diodes Incorporated
ZXMHC3A01T8
Document number: DS33505 Rev. 6 – 2
