Diodes-Incorporated-ZXMN10A08DN8TA
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ZXMN10A08DN8
100V N-CHANNEL ENHANCEMENT MODE MOSFET
SUMMARY
= 100V; R
V
= 0.25
I =
2.1A
D
(BR)D
S
S
D
S
(
ON)
DE
S
C
RIPTION
T
h
i
s
n
ew generat
i
o
n of
T
RENCH MOSFETs from Zetex utilizes a unique structure
that com
b
i
n
es the bene
f
its
o
f
l
o
w on
–
resistance with fast switching speed. This
m
a
k
e
s
them
i
d
eal
f
o
r h
i
g
h e
f
fici
e
ncy, low voltage, power m
anagem ent
app
l
ic
a
tions.
SO8
FEATURES
•
•
•
•
•
L
o
w on
–
resistance
F
a
st sw
i
tching speed
L
o
w thresho
l
d
L
o
w gate dr
i
ve
L
o
w pro
f
ile
S
O
I
C
p
ac
k
a
ge
APP
L
ICATIONS
•
•
•
•
DC – DC c
o
nverters
Power m
anagem ent
f
u
nctions
Di
s
connect sw
i
tches
Motor control
P
I
N
OUT
ORDERING INFORMATION
DEVICE
REEL
S
I
ZE
TAPE
W
I
DTH
QUANTITY
PER REEL
ZXMN10A08DN8TA
ZXMN10A08DN8TC
7”
12m m
12m m
500 units
13”
2,500 units
DEVICE MARKING
T
o
p
V
i
e
w
•
ZXMN
10A08D
I
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S E M
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C O N D U C T O R S
ZXMN10A08DN8
AB
S
O
L
U
TE MAXIMUM RATINGS
PARAMETER
S Y
M
BOL
LI
M
I
T
100
UN
I
T
V
Dra in -s o u rce
vo lta g e
Ga te
s o u rce
vo lta g e
V
V
DS S
GS
20
V
(b )
(b )
(a )
Co n tin u o u s
d ra in
cu rre n t
V
V
V
=10
V
; T
=25°C
I
2.1
1.7
1.6
A
GS
GS
GS
A
D
=10
V
; T
=70°C
A
=10
V
; T
=25°C
A
(c)
Pu ls e d
d ra in
cu rre n t
I
I
I
9
2.6
9
A
A
A
DM
(b )
Co n tin u o u s
s o u rce
cu rre n t
(b o d y
d io d e )
S
(c)
Pu ls e d
s o u rce
cu rre n t
(b o d y
d io d e )
S M
(a )
Po w e r
d is s ip a tio n
a t
T =25°C
A
Lin e a r
d e ra tin g
fa cto r
P
1.25
10
W
m W/°C
D
(b )
Po w e r
d is s ip a tio n
a t
T =25°C
A
P
1.8
W
D
Lin e a r
d e ra tin g
fa cto r
14.5
m W/°C
Op e ra tin g
a n d
s to ra g e
te m p e ra tu re
ra n g e
T :T
-55 to +150
°C
j
s
t
g
THERMAL RE
S
I
S
T
ANCE
PARAMETER
S Y
M
BOL
VAL
U
E
100
UN
I
T
°C/W
°C/W
J u n
c
tio n
to a
m b ie n t
(a )
J u n
c
tio n
to a
m b ie n t
(b )
R
R
θ
J A
θ
J A
69
NOTES
(
a
)
F
o
r a dev
i
ce surface m
ounted on 25m
m x 25m
m FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(
b
)
F
o
r a dev
i
ce surface m
ounted on FR4 PCB m
easured at t
р
5
s
ecs.
(c) R
e
pet
i
tive rating 25m
m x 25m
m FR4 PCB, D = 0.02, pulse width 300
s –
p
u
l
s
e w
i
d
th lim
ited by m
axim um
junction tem
perature. Refer to
Transient Therm
al
I
m
p
edance
graph
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ZXMN10A08DN8
TYPICAL CHARACTERI
S
T
ICS
I
S
SUE 4 – J
A
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S E M
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C O N D U C T O R S
ZXMN10A08DN8
ELECTRICAL CHARACTERI
S
T
ICS
(
a
t
T
A
= 25°C unless otherwise stated).
PARAMETER
S Y
M
BOL
M
I
N
.
TYP.
M
AX.
UNIT CONDITIONS
.
S TATIC
Dra in -s o u rce
b re a kd o w n
vo lta g e
Ze ro
g a te
vo lta g e
d ra in
cu rre n t
Ga te -b o d y
le a ka g e
V
100
V
A
nA
V
I =250
A, V
=0V
D
G
S
(BR)DS S
I
I
0.5
V
=100
V
, V
=0V
GS
DS S
DS
GS
100
V
=
Ϯ
2
0
V
, V
=0V
DS
GS S
Ga te -s o u rce
th re s h o ld
vo lta g e
Static drain-source on-state resistance
V
R
2.0
I =250
A, V
= V
DS GS
D
GS (th )
(1)
0.25
0.30
V
V
=10
V
, I
=3.2A
D
⍀
⍀
DS (o n )
GS
GS
=6
V
, I
=2.6A
D
(1)(3)
Fo rw a rd
tra n s co n d u cta n ce
g
5.0
S
V
=15
V
,I =3.2A
D
fs
DS
(3)
DYNAMIC
In p u t
c
a p a cita n ce
C
C
C
405
28.2
14.2
pF
pF
pF
is s
V
=50
V
, V
=0V,
DS
GS
Ou tp u t
ca p a cita n ce
o s s
rs s
f=1MHz
Re ve rs e
tra n s fe r
ca p a cita n ce
(2) (3)
S
W
I
TCHING
Tu rn -o n
d e la y
tim e
Ris e
tim e
t
t
t
t
3.4
2.2
8
ns
ns
ns
ns
nC
d (o n )
r
V
R
=30
V
, I
=1.2A
D
DD
Tu rn -o ff
d e la y
tim e
Fa ll
tim e
≅
6
.0
⍀
, V
=10V
d (o ff)
f
G
GS
3.2
4.2
Ga te
ch a rg e
Q
V
=50
V
,V =5V,
g
DS GS
I
D
=1.2A
To ta l
g a te
ch a rg e
Q
Q
Q
7.7
1.8
2.1
nC
nC
nC
g
V
=50
V
,V =10V,
DS
GS
Ga te -s o u rce
ch a rg e
Ga te -d ra in
ch a rg e
S
O
URCE-DRAIN
DIODE
g s
g d
I
D
=1.2A
(1)
Dio d e
fo rw a rd
vo lta g e
V
0.87
0.95
V
T =25°C,
I =3.2A,
J S
S D
V
=0V
GS
(3)
Re ve rs e
re co ve ry
tim e
t
27
32
ns
T =25°C,
I =1.2A,
J F
d i/d t=
100A/
s
rr
(3)
Re ve rs e
re co ve ry
ch a rg e
Q
nC
rr
NOTES:
(1) Measured under pu
l
s
ed cond
i
ti
o
ns. W
i
d
th
=
300
µ
s
.
D
u
ty cycle
≤
2% .
(2) Switching characteristics are independent of operating junction tem
perature.
(3) F
o
r des
i
g
n a
i
d
o
n
l
y, not subject to production testing.
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NUARY 2005
4
S E M
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C O N D U C T O R S
ZXMN10A08DN8
TYPICAL CHARACTERI
S
T
ICS
I
S
SUE 4 – J
A
NUARY 2005
5
S E M
I
C O N D U C T O R S
ZXMN10A08DN8
TYPICAL CHARACTERI
S
T
ICS
I
S
SUE 4 – J
A
NUARY 2005
6
S E M
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C O N D U C T O R S
ZXMN10A08DN8
PACKAGE OUTLINE
CONTROLLING DIMEN
S
I
O
NS
I
N
M
I
LLI
M
ETERS APPROX CONVER
S
I
O
NS
I
N
CHES
PACKAGE DIMEN
S
I
O
NS
Millim
e
ters
I
n
ches
Min
Millim
e
ters
Min Max
1.27 BSC
I
n
ches
Min Max
0.050 BSC
DIM
DIM
Min
1.35
0.10
4.80
5.80
3.80
0.40
Max
Max
0.069
0.010
0.197
0.244
0.157
0.050
A
A1
D
1.75
0.25
5.00
6.20
4.00
1.27
0.053
0.004
0.189
0.228
0.150
0.016
e
b
c
0.33
0.19
0°
0.51
0.25
8°
0.013
0.020
0.010
8°
0.008
0°
H
⍜
h
–
E
0.25
–
0.50
–
0.010
–
0.020
–
L
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