Diodes-Incorporated-ZXMN10A09KTC
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A Product Line of
Diodes Incorporated
ZXMN10A09K
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
Product Summary
•
•
•
•
•
Low input capacitance
I
D
V
(BR)DSS
R
DS(on)
Low on-resistance
T
A
= 25
°
C
Fast switching speed
85m
Ω
@ V
GS
= 10V
100m
Ω
@ V
GS
= 6V
7.7A
7.1A
“Green” Component and RoHS compliant (Note 1)
Qualified to AEC-Q101 Standards for High Reliability
100V
Mechanical Data
Description and Applications
This MOSFET features low on-resistance, fast switching and a high
avalanche withstand capability, making it ideal for high efficiency
power management applications.
•
•
Case: TO252-3L
Case Material: Molded Plastic “Green” Molding Compound,
UL Flammability Classification Rating 94V-0 (Note 1)
•
•
•
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
•
•
•
•
•
DC-DC Converters
Power management functions
Disconnect switches
Motor control
Terminals: Matte Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
•
Weight: 0.33 grams (approximate)
Uninterrupted power supply
D
D
D
TO252-3L
G
S
G
S
Top View
Pin Out – Top View
Equivalent Circuit
Ordering Information
(Note 1)
Product
Marking
ZXMN10A09
Reel size (inches)
Tape width (mm)
Quantity per reel
ZXMN10A09KTC
13
16
2,500
Notes:
1. Diodes, Inc. defines “Green” products as those which are RoHS compliant and contain no halogens or antimony compounds; further information
about Diodes Inc.’s “Green” Policy can be found on our website.
For packaging details, go to our website.
Marking Information
ZXMN = Product Type Marking Code, Line 1
10A09 = Product Type Marking Code, Line 2
YYWW = Date Code Marking
YY = Year (ex: 09 = 2009)
WW = Week (01-52)
ZXMN
10A09
YYWW
1 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Drain-Source voltage
Gate-Source voltage
Symbol
V
DSS
Value
100
Unit
V
V
V
GS
±
20
(Note 3)
T
A
= 70
°
C (Note 3)
(Note 2)
7.7
6.2
5.0
Continuous Drain current
A
V
GS
= 10V
GS
= 10V
I
D
Pulsed Drain current
(Note 4)
(Note 3)
(Note 4)
27
11
27
A
A
A
V
I
DM
I
S
Continuous Source current (Body diode)
Pulsed Source current (Body diode)
I
SM
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
4.31
34.4
10.1
80.8
2.15
17.2
29
Unit
(Note 2)
(Note 3)
(Note 6)
W
mW/
°
C
Power dissipation
Linear derating factor
P
D
(Note 2)
(Note 3)
(Note 6)
(Note 5)
Thermal Resistance, Junction to Ambient
12.3
58
1.14
°
C/W
R
θ
JA
Thermal Resistance, Junction to Lead
Operating and storage temperature range
°
C/W
°
C
R
θ
JL
-55 to 150
T
J
, T
STG
Notes:
2. For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
3. Same as note 2, except the device is measured at t
≤
10 sec.
4. Same as note 2, except the device is pulsed with D = 0.02 and pulse width 300 µs.
The pulse current is limited by the maximum junction temperature.
5. Thermal resistance from junction to solder-point (at the end of the drain lead).
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with the high coverage single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
2 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Thermal Characteristics
R
DS(on)
R
DS(on)
Limit
10
10
1
Limit
1
DC
DC
1s
1s
100ms
100m
100ms
100m
10m
10ms
10
10ms
10
T
amb
=25°C
T
amb
=25°C
1ms
1ms
25mm x 25mm
50mm x 50mm
2oz FR4
100µs
100µs
10m
1oz FR4
1
100
1
100
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Safe Operating Area
Safe Operating Area
60
50
40
30
20
10
0
30
25
20
15
10
5
T
amb
=25°C
T
amb
=25°C
25mm x 25mm
1oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
D=0.1
D=0.05
Single Pulse
D=0.1
D=0.05
D=0.2
D=0.2
Single Pulse
0
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
4.5
Single Pulse
T
amb
=25°C
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
50mm x 50mm
2oz FR4
100
50mm x 50mm
2oz FR4
25mm x 25mm
1oz FR4
10
25mm x 25mm
1oz FR4
1
100µ 1m
10m 100m
1
10
100
1k
0
20 40 60 80
100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
3 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
100
⎯
V
BV
DSS
I
DSS
⎯
⎯
⎯
⎯
1
I
D
= 250
μ
A, V
GS
= 0V
µA
nA
V
DS
= 100V, V
GS
= 0V
I
GSS
⎯
±
100
V
GS
=
±
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
2
4
V
V
GS(th)
⎯
⎯
I
D
= 250
μ
A, V
DS
= V
GS
0.085
V
GS
= 10V, I
D
= 4.6A
Static Drain-Source On-Resistance (Note 7)
Ω
R
DS (ON)
⎯
0.100
V
GS
= 6V, I
D
= 4.2A
Forward Transconductance (Notes 7 & 8)
Diode Forward Voltage (Note 7)
Reverse recovery time (Note 8)
Reverse recovery charge (Note 8)
DYNAMIC CHARACTERISTICS
(Note 8)
Input Capacitance
10.7
0.850
40
S
V
g
fs
V
SD
t
rr
⎯
⎯
⎯
⎯
⎯
0.950
⎯
V
DS
= 15V, I
D
= 4.6A
I
S
= 4.7A, V
GS
= 0V
ns
nC
I
S
= 3.0A, di/dt = 100A/
μ
s
62
Q
rr
⎯
1313
83
pF
pF
pF
nC
nC
nC
nC
ns
C
iss
C
oss
C
rss
Q
g
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS
= 50V, V
GS
= 0V
f = 1MHz
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (Note 9)
Total Gate Charge (Note 9)
Gate-Source Charge (Note 9)
Gate-Drain Charge (Note 9)
Turn-On Delay Time (Note 9)
Turn-On Rise Time (Note 9)
Turn-Off Delay Time (Note 9)
Turn-Off Fall Time (Note 9)
56
17.2
26.0
5.6
V
GS
= 6V
Q
g
V
DS
= 50V,
I
D
= 4.6A
Q
gs
Q
gd
t
D(on)
t
r
V
GS
= 10V
7.6
6.8
5.3
ns
V
DD
= 50V, V
GS
= 10V
I
D
= 1.0A, R
G
≅
25
Ω
27.5
12.3
ns
t
D(off)
t
f
ns
Notes:
7. Measured under pulsed conditions. Pulse width
≤
300
μ
s; duty cycle
≤
2%
8. For design aid only, not subject to production testing.
9. Switching characteristics are independent of operating junction temperatures.
4 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Typical Characteristics
5V
5V
T = 25°C
10V
T = 150°C
10V
10
10
4.5V
4.5V
4V
4V
3.5V
V
G
S
V
G
S
1
1
3V
3.5V
0.1
1
10
0.1
1
10
V
DS
Drain-Source Voltage (V)
V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
G
S
= 10V
I
D
= 4.6A
10
1
R
DS(on)
T = 150°C
T = 25°C
V
G
S
= V
DS
I
D
= 250uA
V
G
S(th)
V
DS
= 10V
0.1
3
4
5
-50
0
50
100
150
V
GS
Gate-Source Voltage (V)
Tj Junction
Temperature (°C)
Normalised Curves v Temperature
Typical Transfer Characteristics
1
3.5V
4V
4.5V
5V
V
G
S
T = 25°C
10
T = 150°C
1
T = 25°C
0.1
0.1
10V
0.01
0.2
0.1
1
10
0.4
0.6
0.8
1.0
1.2
I
D
Drain Current (A)
V
SD
Source-Drain Voltage (V)
Source-Drain Diode Forward Voltage
On-Resistance v Drain Current
5 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Typical Characteristics – continued
2000
1500
10
8
V
G
S
= 0V
f = 1MHz
6
C
ISS
1000
4
C
O
SS
C
R
SS
500
V
DS
= 50V
I
D
= 4.6A
2
0
0.1
0
0
5
10
15
20
25
30
1
10
100
Q – Charge (nC)
V
DS
– Drain – Source Voltage (V)
Capacitance v Drain-Source Voltage
Gate-Source Voltage v Gate Charge
Test Circuits
Current
regulator
Q
G
50k
Same as
D.U.T
12V
Q
GS
Q
GD
V
G
V
DS
I
G
D.U.T
I
D
V
GS
Charge
Basic gate charge waveform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
DD
10%
V
GS
t
d(on)
t
r
t
d(off)
t
r
t
(on)
t
(on)
Switching time waveforms
Switching time test circuit
6 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
Package Outline Dimensions
DIM
Inches
Millimeters
Min
DIM
Inches
Millimeters
Min Max
Min
0.086
–
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
–
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
–
Min
Max
A
A1
b
2.18
–
e
H
0.090 BSC
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L
b2
b3
c
L1
L2
L3
L4
L5
θ
1°
θ
°
–
0.108 REF
0.020 BSC
0.035
2.74 REF
0.508 BSC
0.89
0.065
0.040
0.060
10°
1.65
1.016
1.52
10°
c2
D
0.025
0.045
0°
0.635
1.14
0°
D1
E
0.265
–
6.73
–
0°
15°
0°
15°
E1
–
–
–
–
Suggested Pad Layout
6.2
0.244
3.0
0.118
5.8
0.228
1.6
6.17
0.063 0.243
mm
inches
2.58
0.101
7 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
A Product Line of
Diodes Incorporated
ZXMN10A09K
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
8 of 8
January 2010
© Diodes Incorporated
ZXMN10A09K
Document Number DS32045 Rev. 7 – 2
