Diodes-Incorporated-ZXMN2A01FTA

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Diodes-Incorporated-ZXMN2A01FTA
ZXMN2A01F  
20V N-CHANNEL ENHANCEMENT MODE MOSFET  
Product Summary  
Features  
I

D  

•
•
•
•
•
•
•
•
Low On-Resistance  
V

(BR)DSS  

R

DS(ON)  

0.12
Ω
@ V

GS

= 10V  
T

A

= +25°C  
Fast Switching Speed  
20V  
2.2A  
Low Threshold  
Low Gate Drive  
Small Surface Mount Package  
Description  
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  
Halogen and Antimony Free. “Green” Device (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
This new generation MOSFET is designed to minimize the on-state  
resistance (R

DS(ON)

) and yet maintain superior switching performance,  
making it ideal for high efficiency power management applications.  
Mechanical Data  
•
•
Case: SOT23  
Applications  
Case Material: Molded Plastic. UL Flammability Classification  
Rating 94V-0  
•
•
•
DC-DC Converters  
Power Management Functions  
Motor Control  
•
•
•
Moisture Sensitivity:
 
Level 1 per J-STD-020  
e3  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead-free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
Terminal Connections: See Diagram  
Weight: 0.006 grams (approximate)  
D
D
G
S
G
S
Top View  
Pin Configuration  
Equivalent Circuit  
Top View  
Ordering Information
(Note 4)  
Part Number  
ZXMN2A01FTA  
ZXMN2A01FTC  
Case  
SOT23  
SOT23  
Packaging  
3,000/Tape & Reel  
10,000/Tape & Reel  
Notes:  
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.  
2. Se

r more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, “Green”  
and Lead-free.  
3. Halogen- and Antimony-free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and  
<1000ppm antimony compounds.  
4. For packaging details, go to our website at

Marking Information  
7N2  
7N2 = Product Type Marking Code  
1 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
Maximum Ratings
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Drain-Source Voltage  
Symbol  
V

DSS  

Value  
20  
±
12  
Units  
V
V
Gate-Source Voltage  
V

GSS  

T

A

= +25°C  
T

A

= +70°C  
T

A

= +25°C  
(Note 6)  
(Note 6)  
(Note 5)  
2.2  
1.7  
1.9  
A
Continuous Drain Current, V

GS

= 10V  
I

D  

Pulsed Drain Current (Note 7)  
8
1.29  
8
A
A
A
I

DM  

I

S  

Maximum Body Diode Continuous Current (Note 6)  
Maximum Body Diode Continuous Current (Note 7)  
I

SM  

Thermal Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
Symbol  
Value  
625  
5
806  
6.4  
Units  
mW  
mW/°C  
mW  
Total Power Dissipation  
Linear Derating Factor  
Total Power Dissipation  
Linear Derating Factor  
(Note 5)  
P

D  

P

D  

(Note 6)  
mW/°C  
(Note 5)  
200  
155  
-55 to +150  
Thermal Resistance, Junction to Ambient  
(Note 6)  
Operating and Storage Temperature Range  
°C/W  
°C  
R

θ
JA  

T

J,

T

STG  

Notes:  
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.  
6. For a device surface mounted on FR-4 PCB measured at t
≦
5 secs.  
7. Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10
μ
s – pulse width limited by maximum junction temperature. Refer to Transient  
Thermal Impedance graph.  
2 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
Electrical Characteristics
(@T

A

= +25°C, unless otherwise specified.)  
Characteristic  
OFF CHARACTERISTICS  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
V

GS

= 0V, I

D

= 250µA  
20  
V
1
BV

DSS  

I

DSS  

µA  
nA  
V

DS

= 20V, V

GS

= 0V  
100  
V

GS

=
±
12V, V

DS

= 0V  
I

GSS  

ON CHARACTERISTICS  
Gate Threshold Voltage  
0.7  
V
Ω
Ω
S
V
0.12  
0.225  
V

GS(th)  

V

DS

= V

GS

, I

D

= 250µA  
V

GS

= 4.5V, I

D

= 4A  
Static Drain-Source On-Resistance (Note 8)  
R

DS(ON)  

V

GS

= 2.5V, I

D

= 1.5A  
V

DS

= 10V, I

D

= 4A  
Forward Transconductance  
Diode Forward Voltage (Note 8 & 10)  
DYNAMIC CHARACTERISTICS (Note 10)  
Input Capacitance  
6.1  
g

FS  

0.85  
0.95  
V

SD  

V

GS

= 0V, I

S

= 3.2A, T

J

= +25°C  
303  
59  
C

iss  

C

oss  

C

rss  

Q

g  

V

DS

= 15V, V

GS

= 0V,  
f = 1MHz  
Output Capacitance  
pF  
nC  
30  
Reverse Transfer Capacitance  
Total Gate Charge (Note 9)  
Gate-Source Charge (Note 9)  
Gate-Drain Charge (Note 9)  
Turn-On Delay Time (Note 9)  
Turn-On Rise Time (Note 9)  
Turn-Off Delay Time (Note 9)  
Turn-Off Fall Time (Note 9)  
Reverse Recovery Time  
3.0  
V

DS

= 10V, V

GS

= 10V,  
I

D

= 4A  
0.8  
Q

gs  

Q

gd  

t

D(on)  

t

r  

1.0  
2.49  
5.21  
7.47  
4.62  
23  
V

DD

= 10V , I

D

=4A,  
R

G

= 6
Ω
, V

GS

= 5V  
ns  
t

D(off)  

t

f  

ns  
nC  
t

rr  

Qrr  
T

J

= +25°C, I

F

= 4A,
di/dt= 100A/
µ
s  
5.65  
Reverse Recovery Charge  
Notes:  
8.
Measured under pulsed conditions. Width=300μs. Duty cycle
≦
2%.  
9. Switching characteristics are independent of operating junction temperature.  
10. Guaranteed by design. Not subject to production testing.  
3 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
4 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
5 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
Package Outline Dimensions  
Please see AP02002 at

latest version.  
All 7°  
SOT23  
H
Dim  
A
B
C
D
F
G
H
Min  
Max  
0.51  
1.40  
2.50  
1.03 0.915  
0.60 0.535  
Typ  
0.40  
1.30  
2.40  
0.37  
1.20  
2.30  
0.89  
0.45  
1.78  
2.80  
J
K
K1  
a
M
A
2.05  
3.00  
1.83  
2.90  
0.05  
L
L1  
J
0.013 0.10  
K
K1  
L
L1  
M
a
0.890 1.00 0.975  
0.903 1.10 1.025  
C
B
0.45  
0.25  
0.61  
0.55  
0.55  
0.40  
0.085 0.150 0.110  
8°  
D
All Dimensions in mm  
Suggested Pad Layout  
Please see AP02001 at

the latest version.  
Y
Dimensions Value
 
(in mm)  
Z
X
Y
C
E
2.9  
0.8  
0.9  
2.0  
1.35  
Z
C
E
X
6 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2  

ZXMN2A01F  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
This document is written in English but may be translated into multiple languages for reference.
 
Only the English version of this document is the  
final and determinative format released by Diodes Incorporated.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2014, Diodes Incorporated  
7 of 7  
August 2014  
© Diodes Incorporated  
ZXMN2A01F  
Document number: DS33513 Rev. 4 – 2