Diodes-Incorporated-ZXMN3A01E6TA
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ZXMN3A01E6
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
Low Input
Capacitance
I
D
V
(BR)DSS
R
DS(ON) Max
T
A
= +25°C
Low On-Resistance
Fast Switching Speed
3.0A
2.5A
0.12
Ω
@ V
GS
= 10V
0.18
Ω
@ V
GS
= 4.5V
30V
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Description
Mechanical Data
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making it
ideal for high-efficiency power management applications.
Case: SOT26
Case Material: Molded Plastic, “Green” Molding Compound
;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Applications
DC-DC Converters
Power Management Functions
Backlighting
Terminals: Finish
–
Tin Finish Annealed over Copper Leadframe;
Solderable per MIL-STD-202, Method 208
Weight: 0.018 grams (Approximate)
SOT26
D
D
G
D
6
1
2
3
D
S
5
4
Top View
Top View
Pin Configuration
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
ZXMN3A01E6TA
Case
SOT26
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<
1500ppm total Br + Cl) and
<1000ppm antimony compounds.
Marking Information
SOT26
3A1 = Product Type Marking Code
YM = Date Code Marking
Y
or ꢀ
= Year (ex: C = 2015)
M or M = Month (ex: 9 = September)
3A1
Date Code Key
Year
2015
2016
2017
2018
2019
2020
2021
2022
Code
C
D
E
F
G
H
I
J
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
V
DSS
Value
30
Units
V
V
Gate-Source Voltage
±20
V
GSS
T
A
= +25°C (Note 6)
3.0
2.4
2.4
Steady
State
A
Continuous Drain Current, V
GS
= 10V
T
A
= +70°C (Note 6)
T
A
= +25°C (Note 5)
I
D
Maximum Body Diode Forward Current (Note 6)
Pulsed Drain Current (Note 7)
2.4
10
10
A
A
A
I
S
I
DM
I
SM
Pulsed Source Current (Note 7)
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
1.1
8.8
Units
Total Power Dissipation
Linear Derating Factor
W
mW/°C
T
A
= +25°C (Note 5)
P
D
P
D
1.7
13.6
W
mW/°C
Total Power Dissipation
Linear Derating Factor
T
A
= +25°C (Note 6)
Steady State (Note 5)
Steady State (Note 6)
113
70
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
R
θ
JA
-55 to +150
T
J,
T
STG
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 9)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
30
V
BV
DSS
I
DSS
0.5
V
GS
= 0V, I
D
= 250µA
V
DS
= 30V, V
GS
= 0V
V
GS
=
20V, V
DS
= 0V
µA
nA
I
GSS
100
ON CHARACTERISTICS (Note 9)
Gate Threshold Voltage
1.0
V
V
GS(TH)
R
DS(ON)
0.106
0.84
3.5
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 10V, I
D
= 2.5A
V
GS
= 4.5V, I
D
= 2.0A
V
GS
= 0V, I
S
= 1.7A
V
DS
= 4.5V, I
D
= 2.5A
0.12
0.18
0.95
Static Drain-Source On-Resistance (Note 8)
Ω
Diode Forward Voltage (Note 8)
Forward Transconductance (Notes 8 & 10)
DYNAMIC CHARACTERISTICS (Note 10)
Input Capacitance
V
S
V
SD
g
fs
C
iss
C
oss
C
rss
Q
g
190
38
V
DS
= 25V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
Reverse Transfer Capacitance
Total Gate Charge
(V
GS
= 5.0V)
Total Gate Charge
(V
GS
= 10V)
Gate-Source Charge
20
2.3
3.9
0.6
0.9
1.7
2.3
6.6
2.9
17.7
13.0
Q
g
nC
V
DS
= 15V, I
D
= 2.5A
Q
gs
Q
gd
t
D(ON)
t
R
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
V
GS
= 10V, V
DD
= 15V, R
G
= 6.0
Ω
,
ns
Turn-Off Delay Time
I
D
= 2.5A
t
D(OFF)
t
F
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
ns
t
RR
I
F
= 2.5A, dI/dt = 100A/
μ
s
nC
Q
RR
Notes:
5. For a device surface mounted on 25mm x 25mm FR-4 PCB with high coverage of single sided 1oz copper, in still air conditions.
6. For a device surface mounted on FR-4 PCB measured at t
5 secs.
7. Repetitive rating 25mm x 25mm FR-4 PCB, D = 0.05, pulse width 10
μ
s – pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
8. Measured under pulsed conditions. Width=
300μs. Duty cycle ≤
2%.
9. Short duration pulse test used to minimize self-heating effect.
10. Guaranteed by design. Not subject to product testing.
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
Typical Characteristics
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© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
Typical Characteristics
(cont.)
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
Typical Characteristics
(cont.)
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
Package Outline Dimensions
D
SOT26
Dim Min Max
A1
0.013 0.10
A2
1.00 1.30
A3
0.70 0.80
Typ
0.05
1.10
0.75
0.38
0.15
3.00
0.95
1.90
2.80
1.60
0.40
8°
E1
E
b
c
D
e
e1
E
0.35 0.50
0.10 0.20
2.90 3.10
b
–
–
–
–
a1
e1
2.70 3.00
E1
1.50 1.70
L
a
a1
0.35 0.55
A2
–
–
–
–
A1
A3
7°
All Dimensions in mm
Seating Plane
a
L
e
c
Suggested Pad Layout
C1
Dimensions Value
(in mm)
C
C1
G
X
Y
2.40
0.95
1.60
0.55
0.80
3.20
Y1
G
Y
C
Y1
X
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
ZXMN3A01E6
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are
intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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April 2015
© Diodes Incorporated
ZXMN3A01E6
Document number: DS33527
Rev. 5 – 2
