Diodes-Incorporated-ZXMN6A11DN8TA
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ZXMN6A11DN8
60V SO8 Dual N-channel enhancement mode MOSFET
Summary
V
R
(
⍀
)
I (A)
(BR)DSS
DS(on)
D
0.120 @ V
= 10V
3.2
2.6
GS
60
0.180 @ V
= 4.5V
GS
Description
This new generation trench MOSFET from Zetex features a unique
structure combining the benefits of low on-resistance and fast
switching, making it ideal for high efficiency power management
applications.
Features
D1
D2
S2
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G1
G2
Low gate drive
S1
Low profile SOIC package
Applications
•
•
•
DC-DC converters
Power management functions
Motor control
S1
D1
D1
D2
D2
G1
S2
G2
Ordering information
Device
Reel size
(inches)
Tape width
(mm)
Quantity
per reel
Pin out – top view
ZXMN6A11DN8TA
Device marking
7
12
500
ZXMN
6A11D
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Absolute maximum ratings
Parameter
Symbol
V
Limit
Unit
Drain-source voltage
60
V
DSS
Gate-source voltage
V
20
V
A
GS
(b)
(b)
(a)
I
3.2
Continuous drain current
@ V
= 10V; T
=25°C
=70°C
=25°C
D
GS
amb
amb
amb
2.6
2.5
@ V
= 10V; T
GS
@ V
= 10V; T
GS
(c)
I
13.7
3.1
A
A
Pulsed drain current
DM
(b)
I
Continuous source current
(body diode)
S
(c)
I
13.7
1.25
A
Pulsed source current (body diode)
SM
(a)(d)
P
W
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
D
amb
amb
amb
10
mW/°C
W
(a)(e)
(b)(d)
P
1.8
D
14
mW/°C
W
P
2.1
D
17
mW/°C
°C
Operating and storage temperature range
T , T
-55 to +150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)(d)
R
100
°C/W
Junction to ambient
⍜
JA
(a)(e)
R
70
60
°C/W
°C/W
Junction to ambient
⍜
JA
(b)(d)
R
Junction to ambient
⍜
JA
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b
)
F
or a device surface mounted on FR4 PCB measured at t
Յ
10 sec.
(c) Repetitive rating – 25mm x 25mm FR4 PCB, D=0.02, pulse width 300
s – pulse width limited by maximum junction
temperature.
(d
)
F
or a dual device with one active die.
(e) For a device with two active die running at equal power.
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Typical characteristics
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min.
Typ. Max. Unit Conditions
Static
Drain-source breakdown voltage
V
60
V
A
nA
V
I =
250
A, V
=0V
D GS
(BR)DSS
Zero gate voltage drain current
Gate-body leakage
I
I
1.0
V
= 60V, V
=0V
GS
DSS
DS
GS
100
V
= 20
V
,
V
=
0V
DS
GSS
Gate-source threshold voltage
Static drain-source on-state
resistance
V
R
1.0
I =
250
A, V
=V
D DS
GS
GS(th)
DS(on)
0.120
0.180
⍀
V
= 10V, I
= 2.5A
D
GS
GS
DS
(*)
⍀
V
V
= 4.5V, I
= 2A
D
(*)(‡)
g
4.9
S
= 15V, I
= 2.5A
Forward transconductance
fs
D
(‡)
Dynamic
Input capacitance
C
330
35.2
17.1
pF
pF
pF
V
= 40V, V
=0V
DS GS
iss
f=1MHz
Output capacitance
C
oss
rss
Reverse transfer capacitance
C
(†) (‡)
Switching
T
u
rn-on-delay time
Rise time
t
t
t
t
1.95
3.5
8.2
4.6
3.0
ns
ns
ns
ns
nC
V
= 30
V
, I
=
2
.5A
DD D
d(on)
R
≅
6.0
⍀
, V
= 10V
G
GS
r
T
u
rn-off delay time
Fall time
d(off)
f
Gate charge
Q
V
= 15V, V
= 5V
DS GS
g
I =
2.5A
D
T
o
tal gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
5.7
nC
nC
nC
V
= 15V, V
= 10V
DS GS
g
I =
2.5A
D
1.25
0.86
gs
gd
(*)
V
0.85 0.95
V
T =25°C, I
= 2.8A,
Diode forward voltage
SD
j
S
V
=0V
GS
(‡)
t
21.5
20.5
ns T
=25°C, I
= 2.5A,
j S
Reverse recovery time
rr
di/dt=100A/
s
(‡)
Q
nC
Reverse recovery charge
rr
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
s. Duty cycle
Յ
2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Typical characteristics
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Typical characteristics
Current
regulator
Q
G
50k
Same as
D.U.T
12V
Q
GS
Q
GD
V
G
V
DS
I
G
D.U.T
I
D
V
GS
Charge
Basic gate charge waveform
Gate charge test circuit
V
DS
90%
R
D
V
GS
V
DS
R
G
V
CC
10%
V
GS
t
d(on)
t
r
t
d(off)
t
r
t
(on)
t
(on)
Switching time waveforms
Switching time test circuit
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Intentionally left blank
© Zetex Semiconductors plc 2006
ZXMN6A11DN8
Package outline – SO8
DIM
Inches
Min.
Millimeters
DIM
Inches
Millimeters
Min. Max.
1.27 BSC
Max.
0.069
0.010
0.197
0.244
0.157
0.050
Min.
Max.
1.75
0.25
5.00
6.20
4.00
1.27
Min.
Max.
A
A1
D
0.053
0.004
0.189
0.228
0.150
0.016
1.35
0.10
4.80
5.80
3.80
0.40
e
b
c
0.050 BSC
0.013
0.008
0°
0.020
0.010
8°
0.33
0.51
0.25
8°
0.19
0°
H
⍜
h
–
E
0.010
–
0.020
–
0.25
–
0.50
–
L
Note:
Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
