Diodes-Incorporated-ZXMP10A13FTA
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ZXMP10A13F
100V P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
Max I
D
T
A
= +25°C
Note 5
Fast Switching Speed
BV
DSS
Max R
DS(ON)
Package
Low Input Capacitance
Low Gate Charge
-0.7A
-0.5A
1.0
@ V
GS
= -10V
1.45
Ω
@ V
GS
= -6.0V
Low Threshold
-100V
SOT23
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note
3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description
This MOSFET utilizes a unique structure that combines the benefits
of low on-resistance with fast switching speed, making it ideal for
high-efficiency power management applications.
Mechanical Data
Case: SOT-23
Case Material: Molded Plastic, UL Flammability Classification
Rating 94V-0
Applications
DC-DC Converters
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish Annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208
e3
Weight: 0.008 grams (Approximate)
Power Management Functions
Disconnect Switches
Motor Control
SOT-23
D
S
G
D
G
S
Top View
Top View
Pin Out
Equivalent Circuit
Ordering Information
(Notes 4 & 5)
Part Number
ZXMP10A13FTA
ZXMP10A13FQTA
ZXMP10A13FTC
ZXMP10A13FQTC
Compliance
Standard
Automotive
Standard
Case
Quantity per reel
3,000
SOT23
SOT23
SOT23
SOT23
3,000
10,000
10,000
Automotive
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the
same, except where specified. For more information, please refer to
http://www.diodes.com/quality/product_grade_definitions/.
Marking Information
SOT-23
7P1 = Product Type Marking Code
7P1
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April 2015
© Diodes Incorporated
ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
(Note 6)
Symbol
V
DSS
Value
-100
±20
Units
V
V
V
GS
-0.7
-0.5
-0.6
Continuous Drain Current
T
A
= +70°C
(Note 6)
(Note 6)
A
V
GS
= 10V
I
D
Pulsed Drain Current (Note 8)
-3.1
-1.1
-3.1
A
A
A
I
DM
I
S
Continuous Source Current (Body Diode) (Note 6)
Pulsed Source Current (Body Diode) (Note 8)
I
SM
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation (Note 6)
Linear Derating Factor
625
5
mW
mW/°C
P
D
Power Dissipation (Note 7)
Linear Derating Factor
806
6.4
mW
mW/°C
P
D
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Leads (Note 9)
Operating and Storage Temperature Range
200
155
°C/W
°C/W
°C/W
°C
R
θ
JA
R
θ
JA
194
R
θ
JL
-55 to +150
T
J,
T
STG
Notes:
6. For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
7.
For a device surface mounted on FR4 PCB measured at t ≤5 secs.
8.
Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=10μs
– pulse current limited by maximum junction temperature.
9. Thermal resistance from junction to solder-point (at the end of the drain lead).
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ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Thermal Characteristics
10
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
R
DS(on)
Limited
1
DC
100m
10m
1s
100ms
10ms
1ms
Single Pulse
T
amb
=25°C
100µs
1
10
100
0
20
40
60
80 100
120 140 160
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
200
150
100
50
T
amb
=25°C
D=0.5
Single Pulse
T
amb
=25°C
10
Single Pulse
D=0.05
D=0.1
D=0.2
1
0
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
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ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
-100
V
BV
DSS
I
DSS
I
D
= -250µA, V
GS
= 0V
-1.0
±100
µA
nA
V
DS
= -100V, V
GS
= 0V
I
GSS
V
GS
=
20V, V
DS
= 0V
ON CHARACTERISTICS
Gate Threshold Voltage
-2.0
-4.0
1.0
1.45
V
V
GS(th)
I
D
= -250µA, V
DS
= V
GS
V
GS
= -10V, I
D
= -0.6A
Static Drain-Source On-Resistance (Note 10)
Ω
R
DS (on)
V
GS
= -6.0V, I
D
= -0.5A
V
DS
= -15V, I
D
= -0.6A
Forward Transconductance (Notes 10 and 12)
Diode Forward Voltage (Note 10)
Reverse Recovery Time (Note 12)
Reverse Recovery Charge (Note 12)
DYNAMIC CHARACTERISTICS
(Note 12)
Input Capacitance
1.2
-0.85
29
S
V
g
fs
V
SD
t
rr
-0.95
T
J
= +25°C, I
S
= -0.75A, V
GS
= 0V
ns
nC
T
J
= +25°C, I
F
= -0.9A,
di/dt = 100A/µs
31
Q
rr
141
13.1
10.8
1.6
C
iss
C
oss
C
rss
t
D(on)
t
r
V
DS
= -50V, V
GS
= 0V
f = 1.0MHz
Output Capacitance
pF
ns
Reverse Transfer Capacitance
Turn-On Delay Time (Note 11)
Turn-On Rise Time (Note 11)
Turn-Off Delay Time (Note 11)
Turn-Off Fall Time (Note 11)
2.1
V
DD
= -50V, I
D
= -1.0A,
R
G
6.0
Ω
V
GS
= -10V
5.9
t
D(off)
t
f
3.3
V
DS
= -50V, V
GS
= -5.0V,
I
D
= -0.6A
Total Gate Charge (Note 11)
1.8
nC
nC
Q
g
Total Gate Charge (Note 11)
Gate-Source Charge (Note 11)
Gate-Drain Charge (Note 11)
3.5
0.6
1.6
Q
g
Q
gs
Q
gd
V
DS
= -50V, V
GS
= -10V,
I
D
= -0.6A
Notes:
10. Measured under pulsed conditions. Pulse width = 300µ
s. Duty cycle ≤ 2%.
11. Switching characteristics are independent of operating junction temperature.
12. For design aid only, not subject to production testing.
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ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Typical Characteristics
10
10
1
10V
10V
7V
7V
T = 150°C
T = 25°C
5V
4.5V
4V
5V
1
0.1
4.5V
4V
3.5V
0.1
3.5V
-V
GS
3V
0.01
0.01
1E-3
-V
GS
1E-3
0.1
1
10
0.1
1
10
-V
DS
Drain-Source Voltage (V)
-V
DS
Drain-Source Voltage (V)
Output Characteristics
Output Characteristics
1
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
T
= 150°C
= 125°C
A
0.9
V
GS
= -10V
I
D
= – 0.6A
T
A
0.8
V
= 10V
DS
0.7
0.6
0.5
R
DS(on)
T
= 85°C
0.4
0.3
0.2
A
V
GS(th)
V
GS
= V
DS
T
= 25°C
A
I
D
= -250uA
0.1
0
T
= -55°C
A
-50
0
50
100
150
0
3
4
6
7
8
1
2
5
-V
G
S
, GATE-SOURCE VOL
T
AGE
(
V)
Tj Junction
Temperature (°C)
T
y
p
i
c
al
T
r
a
n
sf
er
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
Normalised Curves v Temperature
10
3.5V
-V
GS
4V
T = 25°C
100
10
1
T = 150°C
1
4.5V
5V
T = 25°C
0.1
7V
10V
0.01
0.2
0.4
0.6
0.8
1.0
1.2
0.01
0.1
1
10
-V
SD
Source-Drain Voltage (V)
-I
D
Drain Current (A)
On-Resistance v Drain Current
Source-Drain Diode Forward Voltage
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ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Typical Characteristics
(cont.)
10
8
V
GS
= 0V
f = 1MHz
I
D
= -0.6A
200
150
C
ISS
6
C
OSS
100
50
0
4
C
RSS
2
V
DS
= -50V
0
0.1
1
10
100
0
1
2
3
4
-V
DS
– Drain – Source Voltage (V)
Q – Charge (nC)
Gate-Source Voltage v Gate Charge
Capacitance v Drain-Source Voltage
Test Circuits
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ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
Package Outline Dimensions
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
J
Min
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0.25
J
0.37
1.20
2.30
0.89
0.45
1.78
2.80
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
0.013 0.10
K
K1
L
L1
M
a
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
All Dimensions in mm
G
F
Suggested Pad Layout
Y
Dimensions Value
(in mm)
Z
X
Y
C
E
2.9
0.8
0.9
2.0
1.35
Z
C
X
E
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© Diodes Incorporated
ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
ZXMP10A13F
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference.
Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2015, Diodes Incorporated
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April 2015
© Diodes Incorporated
ZXMP10A13F
Document number: DS33596 Rev. 4 – 2
