Diodes-Incorporated-ZXMP7A17KTC
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ZXMP7A17K
70V P-channel enhancement mode MOSFET
Summary
V
=70V : R
=0.16
⍀
DSS
DS(on)
I =5.7A
D
Description
This new generation of trench MOSFE
T
s
f
rom Zetex utilizes a unique
structure that combines the benefits of low on-resistance with fast
switching speed. This makes them ideal for high efficiency, low voltage
power management applications.
Features
D
S
•
•
•
•
•
Low on-resistance
Fast switching speed
Low threshold
G
Low gate drive
DPAK package
Applications
•
•
•
•
•
DC-DC converters
D
D
Power management functions
Disconnect switches
Motor control
Class D audio output stages
G
S
Ordering information
Pinout – top view
Device
Reel size
(inches)
T
a
pe width
(mm)
Quantity per reel
ZXMP7A17KTC
13
16
2,500
Device marking
ZXMP
7A17
© Zetex Semiconductors plc 2006
ZXMP7A17K
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Drain-source voltage
V
-70
V
DSS
Gate-source voltage
V
Ϯ
20
V
A
GS
(b)
(b)
(a)
I
-5.7
D
Continuous drain current
@ V
=10V; T
=25°C
GS
A
-4.6
-3.8
@ V
=10V; T
=25°C
GS
A
@ V
=10V; T
=25°C
GS
A
(c)
I
I
-17.7
-9.2
A
A
A
DM
Pulsed drain current
(b)
I
S
Continuous source current
(body diode)
(c)
-17.7
Pulsed source current (body diode)
SM
(a)
P
P
P
4.17
33.3
W
mW/°C
D
D
D
Power dissipation at T
=25°C
Linear derating factor
A
(b)
9.25
74
W
mW/°C
Power dissipation at T
=25°C
A
Linear derating factor
(d)
2.11
16.8
W
mW/°C
Power dissipation at T
=25°C
A
Linear derating factor
Operating and storage temperature range
T , T
-55 to +150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
30
°C/W
⍜
JA
⍜
JA
⍜
JA
Junction to ambient
(b)
13.5
59.1
°C/W
°C/W
Junction to ambient
(c)
Junction to ambient
NOTES:
(a) For a device surface mounted on 50mm x 50mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(b
)
F
or a device surface mounted on FR4 PCB measured at t
Յ
10 sec.
(c) Repetitive rating 50mm x 50mm x 1.6mm FR4 PCB, D=0.02 pulse width=300
s – pulse width limited by maximum
junction temperature.
(d
)
F
or a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
© Zetex Semiconductors plc 2006
ZXMP7A17K
ELECTRICAL CHARACTERISTICS (at
T
a
mb = 25°C unless otherwise stated)
Parameter
Static
Symbol
Min.
Typ.
Max.
Unit Conditions
Drain-source breakdown
voltage
V
-70
V
I =
-250
A, V
=0V
D GS
(BR)DSS
Zero gate voltage drain
current
I
I
-1
A
V
= -70V, V
=0V
GS
DSS
DS
Gate-body leakage
100
nA
V
V
= 20V,
V =0V
DS
GSS
GS
Gate-source threshold voltage
V
-1.0
I =
-250
A, V
=V
D DS
GS
GS(th)
DS(on)
Static drain-source on-state
R
0.16
0.25
⍀
⍀
S
V
= -10V, I
= -2.1A
D
GS
GS
DS
(*)
resistance
V
V
= -4.5V, I
= -1.7A
D
(*)(‡)
g
4.4
= -15V, I
= -2.1A
D
fs
Forwar
d
t
ransconductance
(‡)
Dynamic
Input capacitance
C
C
C
635
52
pF
pF
pF
iss
V
= -40V, V
=0V
GS
DS
Output capacitance
oss
rss
f=1MHz
Reverse transfer capacitance
42.5
(†) (‡)
Switching
T
u
rn-on-delay time
Rise time
t
t
t
t
2.5
3.4
27.9
8
ns
ns
ns
ns
nC
d(on)
V
= -35V, I
= -1A
D
r
DD
R
≅
6.0
⍀
, V
= -10V
T
u
rn-off delay time
Fall time
G
GS
d(off)
f
T
o
tal gate charge
Q
9.6
V
= -35V, V
= -5V
DS GS
g
I =
-2.1A
D
T
o
tal gate charge
Gate-source charge
Gate drain charge
Source-drain diode
Q
Q
Q
18
nC
nC
nC
g
V
= -35V, V
= -10V
GS
DS
1.77
3.66
gs
gd
I =
-2.1A
D
(*)
V
-0.85 -0.95
V
T =25°C, I
= -2.0A,
j S
SD
Diode forward voltage
V
=0V
GS
(‡)
t
29.8
38.5
ns
T =25°C, I
= -2.1A,
j S
di/dt=100A/
s
rr
Reverse recovery time
(‡)
Q
nC
rr
Reverse recovery charge
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
(†) Switching characteristics are independent of operating junction temperature.
(‡) For design aid only, not subject to production testing.
© Zetex Semiconductors plc 2006
ZXMP7A17K
Typical characteristics
© Zetex Semiconductors plc 2006
ZXMP7A17K
Typical characteristics
© Zetex Semiconductors plc 2006
ZXMP7A17K
Intentionally left blank
© Zetex Semiconductors plc 2006
ZXMP7A17K
Package outline – DPAK
DIM
Inches
Min
0.086
–
Millimeters
DIM
Inches
Min Max
0.090 BSC
Millimeters
Max
0.094
0.005
0.035
0.045
0.215
0.024
0.023
0.245
–
Min
2.18
–
Max
2.39
0.127
0.89
1.14
5.46
0.61
0.584
6.22
–
Min
Max
A
A1
b
b2
b3
c
c2
D
D1
E
e
H
L
2.29 BSC
0.370
0.055
0.410
0.070
9.40
1.40
10.41
1.78
0.020
0.030
0.205
0.018
0.018
0.213
0.205
0.250
0.170
0.508
0.762
5.21
0.457
0.457
5.41
5.21
6.35
4.32
L1
L2
L3
L4
L5
⍜
1
°
⍜
°
–
0.108 REF
0.020 BSC
2.74 REF
0.508 BSC
0.035
0.065
0.040
0.060
10°
0.89
1.65
1.016
1.52
10°
0.025
0.045
0°
0.635
1.14
0°
0.265
–
6.73
–
0°
15°
0°
15°
E1
–
–
–
–
Note:
Controlling dimensions are in inches. Approximate dimensions are provided in millimeters
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
