Diodes-Incorporated-ZXMS6004FFQTA
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ZXMS6004FFQ
60V N-CHANNEL SELF PROTECTED ENHANCEMENT MODE
IntelliFET MOSFET
Product Summary
Features and Benefits
Continuous Drain Source Voltage: 60V
On-
State Resistance: 500mΩ
Compact High Power Dissipation Package
Low Input Current
Nominal Load Current (V
IN
= 5V): 1.3A
Clamping Energy: 90mJ
Logic Level Input (3.3V and 5V)
Short Circuit Protection with Auto Restart
Overvoltage Protection (Active Clamp)
Thermal Shutdown with Auto Restart
Overcurrent Protection
Description
The ZXMS6004FFQ is a self-protected low side IntelliFET
™
MOSFET
with logic level input. It integrates overtemperature, overcurrent,
overvoltage (active clamp) and ESD protected logic level functionality.
The ZXMS6004FFQ is ideal as a general purpose switch driven from
3.3V or 5V microcontrollers in harsh environments where standard
MOSFETs are not rugged enough.
Input Protection (ESD)
High Continuous Current Rating
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Mechanical Data
Applications
Case: SOT23F
Especially Suited for Loads with a High In-Rush Current such as
Lamps and Motors
Case Material:
Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish
All Types of Resistive, Inductive and Capacitive Loads in
Switching Applications
μC
Compatible Power Switch for 12V and 24V DC Applications
Automotive Rated
Weight: 0.012 grams (Approximate)
Replaces Electromechanical Relays and Discrete Circuits
Linear Mode Capability
–
the current-limiting protection circuitry
is designed to de-activate at low V
DS
to minimize on state power
dissipation. The maximum DC operating current is therefore
determined by the thermal capability of the package/board
combination, rather than by the protection circuitry. This does not
compromise the product’s ability to self
-protect at low V
DS
.
SOT23F
S
D
IN
Top view
Pin Out
Top View
Ordering Information
(Note 5)
Product
ZXMS6004FFQTA
Marking
1K6
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
7
12
3,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
http://www.diodes.com/quality/lead_free.html
fo
r more information about Diodes Incorporated’s definitions of Hal
ogen- and Antimony-free, “Green”
and Lead-free.
3. Halogen- and Antimony-
free “Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q10x qualified and are PPAP capable. Refer to
http://www.diodes.com/quality/product_compliance_definitions/.
IntelliFET is a trademark of Diodes Incorporated
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Marking Information
Y: Year: 0~9
W: Week: A-Z : 1~26
a~z: 27~52
z: Represents 52 & 53 Week
1K6 = Product Type Marking Code
Functional Block Diagram
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Continuous Drain-Source Voltage
Symbol
V
DS
Value
60
Units
V
V
V
Drain-Source Voltage for Short Circuit Protection
Continuous Input Voltage
36
V
DS(SC)
V
IN
-0.5 … +6
No limit
│I
IN
│≤2
Continuous Input Current @V
IN
< -0.2V or V
IN
> 6V
Pulsed Drain Current @V
IN
= 3.3V
mA
I
IN
2
2.5
1
A
A
A
A
I
DM
I
DM
I
S
Pulsed Drain Current @V
IN
= 5V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Unclamped Single Pulse Inductive Energy,
T
J
= +25°C, I
D
= 0.5A, V
DD
= 24V
5
I
SM
90
mJ
E
AS
Electrostatic Discharge (Human Body Model)
Charged Device Model
4,000
1,000
V
V
V
ESD
V
CDM
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Units
0.83
6.66
W
mW/°C
Power Dissipation @T
A
= +25°C (Note 6)
Linear Derating Factor
P
D
P
D
1.5
12.0
W
mW/°C
Power Dissipation @T
A
= +25°C (Note 7)
Linear Derating Factor
Thermal Resistance, Junction to Ambient (Note 6)
150
83
R
θ
JA
R
θ
JA
R
θ
JC
T
J
C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient (Note 7)
Thermal Resistance, Junction to Case (Note 8)
Operating Temperature Range
44
-40 to +150
-55 to +150
Storage Temperature Range
°C
T
STG
Notes:
6. For a device surface mounted on 15mm x 15mm single sided, 1oz weight copper on 1.6mm FR4 board, in still air conditions.
7. For a device surface mounted on 50mm x 50mm single sided, 2oz weight copper on 1.6mm FR4 board, in still air conditions.
8. Thermal resistance from junction and the mounting surfaces of the drain pins.
Recommended Operating Conditions
The ZXMS6004FF is optimized for use with µC operating from 3.3V and 5V supplies.
Characteristic
Symbol
Min
0
Max
5.5
Unit
V
Input Voltage Range
V
IN
T
A
Ambient Temperature Range
-40
3
+125
5.5
°C
V
High Level Input Voltage for MOSFET to be On
Low Level Input Voltage for MOSFET to be Off
Peripheral Supply Voltage (Voltage to which Load is Referred)
V
IH
V
IL
V
P
0
0.7
V
0
36
V
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Typical Thermal Characteristics
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
Limited by Over-Current Protection
Limited
by R
DS(on)
50X50mm FR4
2oz Cu
1
100m
10m
DC
1s
100ms
Single Pulse
10ms
T
=25°C
amb
1ms
15X15mm FR4
1oz Cu
15X15mm FR4
1oz Cu
Limit of s/c protection
10
1
0
25
50
75
100
125
150
V
DS
Drain-Source Voltage (V)
Temperature (°C)
Safe Operating Area
Derating Curve
160
140
120
100
80
T
=25°C
amb
Single Pulse
=25°C
100
10
1
15X15mm FR4
1oz Cu
T
amb
15X15mm FR4
1oz Cu
D=0.5
D=0.2
60
Single Pulse
D=0.05
D=0.1
40
20
0
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Transient Thermal Impedance
Pulse Width (s)
Pulse Power Dissipation
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Static Characteristics
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Clamp Voltage
60
—
—
65
—
—
70
500
1
V
nA
µA
V
V
DS(AZ)
I
DSS
V
IN(TH)
I
IN
I
D
= 10mA
V
DS
= 12V, V
IN
= 0V
V
DS
= 36V, V
IN
= 0V
V
DS
= V
GS
, I
D
= 1mA
V
IN
= +3V
Off-State Drain Current
Input Threshold Voltage
0.7
—
—
—
—
—
1
1.5
100
200
220
600
500
—
60
Input Current
μ
A
μ
A
120
—
V
IN
= +5V
—
Input Current while Overtemperature Active
Static Drain-Source On-State Resistance
V
IN
= +5V
400
350
—
V
IN
= +3V, I
D
= 0.5A
V
IN
= +5V, I
D
= 0.5A
V
IN
= 3V; T
A
= +25°C
V
IN
= 5V; T
A
= +25°C
V
IN
= 3V; T
A
= +25°C
V
IN
= 5V; T
A
= +25°C
V
IN
= +3V
m
Ω
R
DS(ON)
0.9
1.0
1.2
1.3
0.7
1
Continuous Drain Current (Note 6)
Continuous Drain Current (Note 7)
Current Limit (Note 9)
—
—
A
A
I
D
—
—
—
—
—
1.7
2.2
I
D(LIM)
—
V
IN
= +5V
Dynamic Characteristics
Turn-On Delay Time
—
—
—
—
—
—
—
—
5
t
D(ON)
t
R
t
D(OFF)
f
F
Rise Time
10
45
15
μ
s
V
DD
= 12V, I
D
= 0.5A, V
GS
= 5V
Turn-Off Delay Time
Fall Time
Overtemperature Protection
Thermal Overload Trip Temperature (Note 10)
Thermal Hysteresis (Note 10)
—
—
+150
+175
+10
—
—
°C
°C
T
JT
f
F
—
Notes:
9.
The drain current is restricted only when the device is in saturation (see graph ‘Typical Output Characteristic’
). This allows the device to be used in the
fully on-state without interference from the current limit. The device is fully protected at all drain currents, as the low power dissipation generated outside
saturation makes current limit unnecessary.
10. Overtemperature
protection is designed to prevent device destruction under fault conditions. Fault conditions are considered as “outside” nor
mal
operating range, so this part is not designed to withstand over-temperature for extended periods.
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Typical Performance Characteristics
120
100
80
60
40
20
0
T
A
= 25°C
3
V
IN
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.5V
2.0V
2
1
0
0
1
2
3
4
5
6
7
8
9
10 11 12
0
1
2
3
4
5
V
IN
Input Voltage (V)
Input Current vs Input Voltage
V
DS
Drain-Source Voltage (V)
Typical Output Characteristic
1.4
1.4
I
D
= 0.5A
V
IN
= V
DS
I
D
= 1mA
1.3
1.2
1.1
1.0
0.9
0.8
1.2
1.0
0.8
0.6
0.4
0.2
0.0
T
J
= 150°C
T
J
= 25°C
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-75 -50 -25
0
25 50 75
100 125 150
T
J
Junction Temperature (°C)
V
IN
Input Voltage (V)
On-Resistance vs Input Voltage
Threshold Voltage vs Temperature
0.9
10
0.8
0.7
0.6
0.5
0.4
0.3
0.2
T
J
=150°C
1
V
IN
= 3V
T
J
=25°C
0.1
V
IN
= 5V
0.01
-75 -50 -25
0
25 50 75
100 125 150
0.4
0.6
0.8
1.0
1.2
V
SD
Source-Drain Voltage (V)
Reverse Diode Characteristic
T
J
Junction Temperature (°C)
On-Resistance vs Temperature
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Typical Performance Characteristics
(continued)
12
12
10
8
I
D
=500mA
I
D
=500mA
V
DS
10
V
DS
8
6
6
V
IN
4
2
0
4
V
IN
2
0
-50
-50
0
50
100 150 200 250 300
0
50
100 150 200 250 300
Time (
s)
Switching Speed
Time (
s)
Switching Speed
2.5
2.0
1.5
1.0
0.5
0.0
V
IN
= 5V
V
DS
= 15V
R
D
= 0
0
5
10
15
20
Time (ms)
Typical Short Circuit Protection
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
Package Outline Dimensions
D
c
b
SOT23F
L1
Typ
0.90
0.44
0.16
2.90
Dim Min
Max
1.00
A
b
0.80
0.35
0.10
2.80
0.50
E1
E
c
0.20
D
e
3.00
0.95 REF
0.190 REF
2.50
e1
E
b
2.40
1.65
–
2.30
1.50
1.20
0.30
0.30
0.05
e1
E1
k
1.70
e
–
R
0.50
0.40
–
L
0.65
L
k
L1
R
0.50
0.15
A
All Dimensions in mm
Suggested Pad Layout
C
X
Dimensions Value
(in mm)
Y1
C
X
0.95
0.80
Y
Y
1.110
3.000
Y1
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
ZXMS6004FFQ
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2016, Diodes Incorporated
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ZXMS6004FFQ
Document number: DS37132 Rev. 4 – 2
