Diodes-Incorporated-ZXTD718MCTA

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Diodes-Incorporated-ZXTD718MCTA
A Product Line of  
Diodes Incorporated  
ZXTD718MC  
DUAL 20V PNP LOW SATURATION SWITCHING TRANSISTOR  
Features and Benefits  
Mechanical Data  
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Case: DFN3020B-8  
Case material: Molded Plastic. “Green” Molding Compound.  
UL Flammability Rating 94V-0  
Terminals: Pre-Plated NiPdAu leadframe.  
Nominal package height: 0.8mm  
Moisture Sensitivity: Level 1 per J-STD-020  
Solderable per MIL-STD-202, Method 208  
Weight: 0.013 grams (approximate)  
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BV

CEO

> -20V;  
I

C

= -3.5A Continuous Collector Current  
R

SAT

= 64 m
Ω
for Low Equivalent On Resistance  
Low Saturation Voltage (-220mV @
 
-1A)  
hFE characterized up to -6A for high current gain holds up  
Dual NPN saving footprint and component count  
Low profile 0.8mm high package for thin applications  
R

θ
JA

efficient, 40% lower than SOT26  
6mm

2

footprint, 50% smaller than TSOP6 and SOT26  
Lead-Free, RoHS Compliant (Note 1)  
Halogen and Antimony Free. “Green” Device (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
Applications  
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Battery charging circuits  
Load disconnect switches  
DC-DC converters  
Motor drive  
LED backlighting circuits  
Portable applications  
C2  
C1  
DFN3020B-8  
C2  
C2  
C1  
C1  
C2  
C1  
B2  
B1  
E2  
B2  
E1  
B1 Pin
 
1  
E1  
PNP Transistor  
E2  
PNP Transistor  
Bottom View  
Pin Out  
Top View  
Bottom View  
Equivalent Circuit  
Ordering Information
(Note 3)  
Product  
ZXTD718MCTA  
Marking  
D22  
Reel size (inches)  
Tape width (mm)  
Quantity per reel  
7
8
3,000  
Notes:  
1. No purposefully added lead.  
2. Diodes Inc’s “Green” Policy can be found on our websit

3. For Packaging Details, go to our website at

Marking Information  
D22 = Product type Marking Code  
Top view, dot denotes Pin 1  
D22  
1 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
Maximum Ratings
@ T

A

= 25°C unless otherwise specified  
Parameter  
Collector-Base Voltage  
Symbol  
V

CBO  

V

CEO  

V

EBO  

I

CM  

Limit  
-25  
-20  
-7  
Unit  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
Peak Pulse Current  
-6  
Continuous Collector Current (Notes 4 and 7)  
Base Current  
-3.5  
-1  
A
I

C  

I

B  

Thermal Characteristics
@ T

A

= 25°C unless otherwise specified  
Characteristic  
Symbol  
Value  
1.5  
12  
Unit  
(Notes 4 & 7)  
2.45  
19.6  
1.13  
8
(Notes 5 & 7)  
W
mW/
°
C  
Power Dissipation  
Linear Derating Factor  
P

D  

(Notes 6 & 7)  
1.7  
(Notes 6 & 8)  
(Notes 4 & 7)  
13.6  
83.3  
51.0  
111  
73.5  
(Notes 5 & 7)  
Thermal Resistance, Junction to Ambient  
(Notes 6 & 7)  
R

θ  

JA  
°
C/W  
°
C  
(Notes 6 & 8)  
Thermal Resistance, Junction to Lead  
(Notes 7 & 9)  
17.1  
R

θ  

JL  
Operating and Storage Temperature Range  
-55 to +150  
T

J

, T

STG  

Notes:  
4. For a dual device surface mounted on 28mm x 28mm (8cm

2

) FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is  
measured when operating in a steady-state condition.
 
The heatsink is split in half with the exposed collector pads connected to each half.  
5. Same as note (4), except the device is measured at t <5 sec.  
6. Same as note (4), except the device is surface mounted on 31mm x 31mm (10cm

2

) FR4 PCB with high coverage of single sided 1oz copper.  
7. For a dual device with one active die.  
8. For dual device with 2 active die running at equal power.  
9. Thermal resistance from junction to solder-point (at the end of the collector lead).  
2 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
Thermal Characteristics  
10  
2.0  
1.5  
1.0  
0.5  
0.0  
V

CE(SAT)  

T

amb

=25°C  
Limited  
10sqcm 1oz Cu  
Two active die  
1
DC  
1s  
8sqcm 2oz Cu  
One active die  
100ms  
10ms  
0.1  
8sqcm 2oz Cu  
One active die  
1ms  
100us  
10sqcm 1oz Cu  
One active die  
0.01  
Single Pulse, T

amb

=25°C  
0.1  
1
10  
0
25  
50  
75  
100  
125  
150  
V

CE

Collector-Emitter Voltage (V)  
Temperature (°C)  
Derating Curve  
Safe Operating Area  
225  
200  
175  
150  
125  
100  
75  
8sqcm 2oz Cu  
One active die  
1oz Cu  
One active die  
80  
60  
40  
20  
0
1oz Cu  
Two active die  
D=0.5  
Single Pulse  
D=0.05  
D=0.1  
D=0.2  
2oz Cu  
One active die  
50  
2oz Cu  
Two active die  
25  
0
100µ 1m
 
10m 100m  
1
10  
100  
1k  
0.1  
1
10  
100  
Pulse Width (s)  
Board Cu Area (sqcm)  
Thermal Resistance v Board Area  
Transient Thermal Impedance  
3.5  
T

amb

=25°C  
T

j
m
ax

=150°C  
Continuous  
2oz Cu  
Two active die  
3.0  
2.5  
2.0  
1.5  
1.0  
0.5  
0.0  
2oz Cu  
One active die  
1oz Cu  
Two active die  
1oz Cu  
One active die  
0.1  
1
10  
100  
Board Cu Area (sqcm)  
Power Dissipation v Board Area  
3 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
Electrical Characteristics
@T

A

= 25°C unless otherwise specified  
Characteristic  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage (Note 10)  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
Symbol  
BV

CBO  

BV

CEO  

BV

EBO  

I

CBO  

Min  
-25  
Typ  
-35  
-25  
8.5  
–
Max  
–
Unit  
V
Test Condition  
I

C

= -100µA  
-20  
–
V
I

C

= 10mA  
I

E

= -100µA  
V

CB

= -20V  
V

EB

= -6V  
V

CES

= -16V  
-7  
–
V
–
-100  
-100  
-100  
–
nA  
nA  
nA  
Emitter Cutoff Current  
–
–
I

EBO  

Collector Emitter Cutoff Current  
–
–
I

CES  

300  
475  
450  
230  
30  
I

C

= -10mA, V

CE

= -2V  
300  
–
I

C

= -100mA, V

CE

= -2V  
I

C

= -2A, V

CE

= -2V  
I

C

= -6A, V

CE

= -2V  
Static Forward Current Transfer Ratio (Note 10)  
Collector-Emitter Saturation Voltage (Note 10)  
–
h

FE  

150  
–
15  
–
–
-19  
-170  
-190  
-240  
-225  
-0.87  
-1.01  
21  
-30  
-220  
-250  
-350  
-300  
-0.95  
-1.12  
30  
I

C

= – 0.1A, I

B

= -10mA  
–
I

C

= -1A, I

B

= -20mA  
I

C

= -1.5A, I

B

= -50mA  
I

C

= -2.5A, I

B

= -150mA  
I

C

= -3.5A, I

B

= -350m  
I

C

= -3.5A, V

CE

= -2V  
I

C

= -3.5A, I

B

= -350mA  
V

CB

= 10V, f = 1MHz  
–
mV  
V

CE(sat)  

–
–
Base-Emitter Turn-On Voltage (Note 10)  
Base-Emitter Saturation Voltage (Note 10)  
Output Capacitance  
–
V
V
V

BE(on)  

V

BE(sat)  

C

obo  

–
–
pF  
V

CE

= -10V,
I

C

= -50mA,  
Transition Frequency  
150  
180  
–
MHz  
f

T  

f = 100MHz  
Turn-On Time  
Turn-Off Time  
–
–
40  
–
–
ns  
ns  
t

on  

t

off  

V

CC

= -10V, I

C

= 1A  
670  
I

B1

= I

B2

= 20mA  
Notes:  
10. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%  
4 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
Typical Electrical Characteristics  
1
0.25  
0.20  
0.15  
0.10  
0.05  
0.00  
I

C

/I

B

=50  
Tamb=25°C  
100°C  
25°C  
100m  
I

C

/I

B

=100  
I

C

/I

B

=50  
10m  
-55°C  
I

C

/I

B

=10  
1m  
I

C

10
m

Collec

1

t
o

0

r

0
m

Current (A)  
I

C

10
m

Collec

1

t
o

0

r

0
m

Current (A)  
1
10  
1m  
1
10  
V

CE(SAT)

v I

C  

V

CE(SAT)

v I

C  

1.4  
1.2  
1.0  
0.8  
0.6  
0.4  
0.2  
0.0  
630  
540  
450  
360  
270  
180  
90  
V

CE

=2V  
I

C

/I

B

=50  
1.0  
0.8  
0.6  
0.4  
100°C  
25°C  
-55°C  
25°C  
-55°C  
100°C  
0
1m  
10m  
1
10  
1m  
1
10  
I

C

Collec
t

1

o

0

r

0
m

Current (A)  
I

C

10
m

Collec

1

t
o

0

r

0
m

Current (A)  
h

FE

v I

C  

V

BE(SAT)

v I

C  

V

CE

=2V  
1.0  
0.8  
0.6  
0.4  
0.2  
-55°C  
25°C  
100°C  
I

C

10
m

Collec

1

t
o

0

r

0
m

Current (A)  
1m  
1
10  
V

BE(ON)

v I

C  

5 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
Package Outline Dimensions  
DFN3020B-8  
Dim Min
 
Max Typ  
A
A3  
A
A1  
A3  
b
0.77 0.83 0.80  
A1  
0
–
0.05 0.02  
0.15  
–
D
0.25 0.35 0.30  
2.95 3.075 3.00  
D
D2
0.82 1.02 0.92  
D4
1.01 1.21 1.11  
D4  
D4  
e
–
–
0.65  
E
1.95 2.075 2.00  
D2  
E
E2
0.43 0.63 0.53  
L
Z
E2  
e
0.25 0.35 0.30  
0.375  
b
Z
–
–
All Dimensions in mm  
L
Suggested Pad Layout  
C
X
Dimensions  
Value (in mm)  
0.650  
Y1  
Y
C
G
G1  
X
X1  
Y
G1  
0.285  
0.090  
0.400  
1.120  
G
Y2  
0.730  
X1  
Y1  
Y2  
0.500  
0.365  
6 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2  

A Product Line of  
Diodes Incorporated  
ZXTD718MC  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE  
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the  
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or  
trademark rights, nor the rights of others.
 
Any Customer or user of this document or products described herein in such applications shall assume  
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated  
website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and  
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or  
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending.
 
Product names and markings  
noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express  
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life
 
support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  
labeling can be reasonably expected to result in significant injury to the user.  
B. A
 
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the  
failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and  
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any  
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related  
information or support that may be provided by Diodes Incorporated.
 
Further, Customers must fully indemnify Diodes Incorporated and its  
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2011, Diodes Incorporated  
7 of 7  
January 2011  
© Diodes Incorporated  
ZXTD718MC  
Document Number DS32000 Rev. 2 – 2