Diodes-Incorporated-ZXTN2038FTA

A Product Line of  

Diodes Incorporated  

ZXTN2038F  

SOT23 80 volt NPN silicon planar medium power  

transistor  

Summary  

V

V

> 80V  

> 60V  

(BR)CEV  

(BR)CEO  

I

= 1A  

c(cont)  

V

< 500mV

 

@ 1A  

ce(sat)  

Complementary type  

ZXTP2039F  

Description  

This transistor combines high gain, high current operation and low saturation voltage making it  

ideal for power MOSFET gate driving and low loss power switching.  

Features  

•

•

•

•

Low saturation voltage for reduced power dissipation  

1 to 2 amp high current capability  

Pb-free  

SOT23 package  

Applications  

•

•

Power MOSFET gate driving  

Low loss power switching  

Ordering information  

Device  

Reel size  

T

a

pe width  

8mm  

Quantity per reel  

3,000  

ZXTN2038FTA  

ZXTN2038FTC  

7”  

13”  

8mm  

10,000  

Device marking  

N38  

© Diodes Incorporated, 2008  

.diodes.com  

ZXTN2038F  

Absolute maximum ratings  

Parameter  

Symbol  

Limit  

Unit  

Collector-base voltage  

V

V

V

V

80  

V

CBO  

CEV  

CEO  

EBO  

Collector-emitter voltage  

Collector-emitter voltage  

Emitter-base voltage  

Peak pulse current  

80  

60  

5.0  

2

V

V

V

I

I

I

A

CM  

(*)  

1

A

Continuous collector current  

C

Peak base current  

1

A

BM  

(*)  

P

350  

mW  

Power dissipation @ T

 

=25°C  

D

A

Operating and storage temperature  

T :T  

55 to +150  

°C  

j

stg  

NOTES:  

(*) For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air  

conditions.  

© Diodes Incorporated, 2008  

.diodes.com  

ZXTN2038F  

Electrical characteristics (@T  

= 25°C)  

AMB  

Parameter  

Symbol  

Min.  

Max.  

Unit  

Conditions  

Collector-base breakdown  

voltage  

V

80  

V

I =100

␮

A  

C

(BR)CBO  

Collector-emitter breakdown  

voltage  

V

V

80  

V

V

I =100

␮

A,  

C

(BR)CEV  

0.3V > V

 

> -1V  

BE  

(*)  

I =10mA  

C

Collector-emitter breakdown  

voltage  

60  

5

(BR)CEO  

Emitter-base breakdown voltage  

Collector-emitter cut-off current  

Collector-base cut-off current  

Emitter-base cut-off current  

V

V

I =100

␮

A  

E

(BR)EBO  

I

100  

100  

100  

nA  

nA  

nA  

V

V

V

=60V  

=60V  

=4V  

CES  

CE  

CB  

EB  

I

CBO  

I

EBO  

Static forward current transfer  

ratio  

h

100  

100  

80  

I =1mA,

 

V =5V  

C CE  

FE  

(*)  

(*)  

I =500mA, V

 

=5V  

300  

C

CE  

(*)  

I =1A, V

 

=5V  

C

CE  

(*)  

I =2A, V

 

=5V  

C

CE  

30  

Collector-emitter saturation  

voltage  

V

0.2  

0.25  

0.5  

V

V

V

I =100mA,

 

I =2mA  

CE(sat)  

C

B

I =500mA,  

C

(*)  

I =50mA  

B

(*)  

(*)  

I =1A,

 

I =100mA  

C

B

Base-emitter saturation voltage  

Base-emitter turn-on voltage  

T

r

ansition frequency  

V

1.1  

1.0  

V

V

I =1A,

 

I =100mA  

BE(sat)  

C

B

(*)  

V

I =1A,

 

V =5V  

BE(on)  

C

CE  

f

150  

I =50mA,

 

V =10V  

T

C

CE  

f=100MHz  

Output capacitance  

C

10  

pF  

V

=10V, f=1MHz  

CB  

obo  

NOTES:  

(*) Measured under pulsed conditions. Pulse width=300

␮

S. Duty cycle

Յ

2%  

Spice parameter data is available upon request for this device  

© Diodes Incorporated, 2008  

.diodes.com  

ZXTN2038F  

Typical characteristics  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0

0.6  

+25 ° C  

I

C

/I

B

=10  

0.5  

0.4  

0.3  

-55 °C  

I

C

/I  

/I  

B

=10  

=50  

+25 °C  

+100 °C  

I

C  

B

0.2  

0.1  

0

10mA  

100mA  

1A  

10A  

10A  

10A  

10mA  

100mA  

1A  

10A  

1mA  

1mA  

C

I -Collector

 

Current  

C

I -Collector

 

Current  

V

CE(sat)

v I  

C

V

CE(sat)

v I  

C

400  

300  

200  

100  

0

V

I

C

/I

B

=10  

1.0  

0.8  

0.6  

0.4  

0.2  

0

+100 °C  

+25 °C  

-55 °C  

-55 °C  

+25 °C  

+100 °C  

1mA  

10mA  

100mA  

1A  

10A  

1mA  

10mA  

100mA  

1A  

C

I -Collector

 

Current  

C

I -Collector

 

Current  

h

FE

V I  

C

V

BE(sat)

v I  

C

10  

1.2  

1.0  

0.8  

0.6  

0.4  

0.2  

0

V

CE

=5V  

1

0.1  

DC  

1s  

-55 °C  

+25 °C  

+100 °C  

100ms  

10ms  

1ms  

100us  

0.01  

1mA  

10mA  

100mA  

1A  

0.1V  

1V  

10V  

100V  

C

I -Collector

 

Current  

V

CE

– Collector Emitter Voltage (V)  

V

BE(on)

v I  

C

Safe Operating Area  

© Diodes Incorporated, 2008  

.diodes.com  

ZXTN2038F  

Packaging details – SOT23  

E

e

e1  

b

3 leads  

D

L1  

E1  

A

L

c

A1  

Package dimensions  

Dim.  

Millimeters  

Min. Max.  

Inches  

Dim.  

Millimeters  

Inches  

Min.  

Max.  

0.044  

0.004  

0.020  

0.008  

0.120  

Min.  

Max.  

Min.  

Max.  

A

A1  

b

–

1.12  

0.10  

0.50  

0.20  

3.04  

–

e1  

E

1.90 NOM  

0.075 NOM  

0.01  

0.30  

0.085  

2.80  

0.0004  

0.012  

0.003  

0.110  

2.10  

2.64  

1.40  

0.60  

0.62  

–

0.083  

0.047  

0.104  

0.055  

E1  

L

1.20  

0.25  

0.45  

–

c

0.0098 0.0236  

D

e

L1  

–

0.018  

–

0.024  

–

0.95 NOM  

0.037 NOM  

Note:

Controlling dimensions are in millimeters. Approximate dimensions are provided in inches  

© Diodes Incorporated, 2008  

.diodes.com  

ZXTN2038F  

Definitions  

Product change  

Diodes Incorporated reserves the right to alter, without notice, specifications, design, price or conditions of supply of any product or  

service. Customers are solely responsible for obtaining the latest relevant information before placing orders.  

Applications disclaimer  

The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for  

the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is  

assumed by Diodes Inc. with respect to the accuracy or use of such information, or infringement of patents or other intellectual property  

rights arising from such use or otherwise. Diodes Inc. does not assume any legal responsibility or will not be held legally liable (whether  

in contract, tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business,  

contract, opportunity or consequential loss in the use of these circuit applications, under any circumstances.  

Life support  

Diodes Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express  

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are intended to implant into the body  

or  

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the  

labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to  

cause the failure of the life support device or to affect its safety or effectiveness.  

Reproduction  

The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the  

company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a  

representation relating to the products or services concerned.  

T

e

rms and Conditions  

All products are sold subjects to Diodes Inc. terms and conditions of sale, and this disclaimer (save in the event of a conflict between the  

two when the terms of the contract shall prevail) according to region, supplied at the time of order acknowledgement.  

For the latest information on technology, delivery terms and conditions and prices, please contact your nearest Diodes Zetex sales office.  

Quality of product  

Diodes Zetex Semconductors Limited is an ISO 9001 and TS16949 certified semiconductor manufacturer.  

To

e

nsure quality of service and products we strongly advise the purchase of parts directly from Diodes Inc. or one of our regionally  

authorized distributors. For a complete listing of authorized distributors please visit:

Diodes Inc.

does not warrant or accept any liability whatsoever in respect of any parts purchased through unauthorized sales channels.  

ESD (Electrostatic discharge)  

Semiconductor devices are susceptible to damage by ESD. Suitable precautions should be taken when handling and transporting devices.  

The possible damage to devices depends on the circumstances of the handling and transporting, and the nature of the device. The extent  

of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.  

Devices suspected of being affected should be replaced.  

Green compliance  

Diodes Inc. is committed to environmental excellence in all aspects of its operations which includes meeting or exceeding regulatory  

requirements with respect to the use of hazardous substances. Numerous successful programs have been implemented to reduce the use  

of hazardous substances and/or emissions.  

All Diodes Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance  

with WEEE and ELV directives.  

Product status key:  

“Preview”  

“Active”  

Future device intended for production at some point. Samples may be available  

Product status recommended for new designs  

“Last time buy (LTB)”  

Device will be discontinued and last time buy period and delivery is in effect  

“Not recommended for new designs”

Device is still in production to support existing designs and production  

“Obsolete”  

Production has been discontinued  

Datasheet status key:  

“Draft version”  

This term denotes a very early datasheet version and contains highly provisional information, which  

may change in any manner without notice.  

“Provisional version”  

“Issue”  

This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.  

However, changes to the test conditions and specifications may occur, at any time and without notice.  

This term denotes an issued datasheet containing finalized specifications. However, changes to  

specifications may occur, at any time and without notice.  

Sales offices  

The Americas  

Europe  

Taiwan  

Shanghai  

Shenzhen  

Korea  

3050 E. Hillcrest Drive  

Westlake Village,  

CA 91362-3154  

Kustermann-Park  

Balanstraße 59,  

D-81541 München  

Germany  

7F, No. 50,  

Min Chuan Road  

Hsin-Tien  

Rm. 606, No.1158  

Changning Road  

Shanghai, China  

ANLIAN Plaza, #4018  

Jintian Road  

Futian CBD,  

6 Floor, Changhwa B/D,  

1005-5 Yeongtong-dong,  

Yeongtong-gu, Suwon-si,  

Gyeonggi-do, Korea 443-813  

Tel: (+1) 805 446 4800  

Taipei, Taiwan  

Tel: (+86) 215 241 4882  

Shenzhen, China  

Fax: (+1) 805 446 4850

 

Tel: (+49) 894 549 490  

Tel: (+886) 289 146 000

 

Fax (+86) 215 241 4891  

Tel: (+86) 755 882 849 88

 

Tel: (+82) 312 731 884  

Fax: (+86) 755 882 849 99

 

Fax: (+82) 312 731 885  

Fax: (+49) 894 549 4949

 

Fax: (+886) 289 146 639  

© Diodes Incorporated, 2008  

.diodes.com