Diodes-Incorporated-ZXTN23015CFHTA
| Part # | Diodes-Incorporated-ZXTN23015CFHTA |
Download  | Diodes-Incorporated-ZXTN23015CFHTA |
ZXTN23015CFH
15
V
,
S
OT23,
NPN medium power transistor
Summary
V
> 60V, V
> 15V
(BR)CEO
(BR)CEX
I
= 6A
C(CONT)
R
= 19m
⍀
typical
CE(SAT)
V
< 30mV
@ 1A
CE(SAT)
P =
1.25W
D
Complementary part number : ZXTP23015CFH
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
Features
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
60V forward blocking voltage
Applications
E
B
•
•
•
•
DC – DC converters
MOSFET and IGBT gate driving
Motor drive
C
Relay, lamp, and solenoid drive
Pinout – top view
Ordering information
Device
Reel size
(inches)
Tape
width
Quantity per REEL
ZXTN23015CFHTA
7
8mm
3000
Device marking
327
© Zetex Semiconductors plc 2006
ZXTN23015CFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
60
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
V
60
15
7.0
12
6
V
V
(BR)CEX
V
V
I
CEO
EBO
CM
V
A
A
A
W
(c)
I
I
Continuous collector current
C
B
Base current
1.2
o
(a)
(b)
(c)
(d)
P
P
P
P
0.73
5.84
D
D
D
D
Power dissipation @ T
=25 C
A
o
mW/ C
(a)
Linear derating factor
o
1.05
8.4
W
Power dissipation @ T
=25 C
A
o
mW/ C
(b)
Linear derating factor
o
1.25
9.6
W
Power dissipation @ T
=25 C
A
o
mW/ C
(c)
Linear derating factor
o
1.81
14.5
W
Power dissipation @ T
=25 C
A
o
mW/ C
(d)
Linear derating factor
o
Operating and storage temperature
T :T
-55 to +150
j
stg
C
Thermal resistance
Parameter
Symbol
Value
Unit
(a)
o
R
⍜
R
⍜
R
⍜
R
⍜
171
JA
JA
JA
JA
Junction to ambient
C/W
(b)
o
119
100
69
Junction to ambient
C/W
(c)
o
Junction to ambient
C/W
(d)
o
Junction to ambient
C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b
)
M
ounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d
)
A
s (c) above measured at t<5secs.
© Zetex Semiconductors plc 2006
ZXTN23015CFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
AMB
Parameter
Symbol
Min. Typ. Max. Unit
Conditions
Collector-base breakdown
voltage
Collector-emitter breakdown
voltage
V
V
60
85
V
I =100
A
C
(BR)CBO
(BR)CEX
60
85
V
I =100
A,
C
R
< 1k
⍀
OR
BE
-1V < V
< 0.25V
BE
(*)
Collector-emitter breakdown
voltage
V
15
23
V
(BR)CEO
I =10mA
C
Emitter-base breakdown voltage
V
7.0
8.3
–
V
I =100
A
E
(BR)EBO
Collector-emitter cut-off current
I
100
nA
V
R
= 48V,
< 1k
⍀
OR
CEX
CE
BE
-1V < V
< 0.25V
BE
Collector-base cut-off current
Emitter-base cut-off current
I
I
<1
<1
20
10
nA
nA
V
V
=48V
=6V
CBO
CB
EB
EBO
(*)
Static forward current transfer
ratio
H
160
200
190
150
300
FE
I =10mA,
V =2V
C CE
(*)
350
330
280
7
560
I =500mA,
V =2V
C
CE
(*)
I =3A,
V =2V
C
CE
(*)
I =6A,
V =2V
C
CE
(*)
Collector-emitter saturation
voltage
V
15
30
mV
mV
mV
mV
V
CE(sat)
I =0.1A,
I =5mA
C
B
(*)
22
I =1A,
I =100mA
C
B
(*)
70
90
I =3A,
I =60mA
C
B
(*)
130
0.83
0.89
0.81
235
180
0.93
0.98
0.91
I =6A,
I =120mA
C
B
(*)
Base-emitter saturation voltage
V
V
BE(sat)
I =3A,
I =60mA
C
B
(*)
V
I =6A,
I =120mA
C
B
(*)
Base-emitter turn-on voltage
T
r
ansition frequency
V
BE(on)
I =6A,
V =2V
C
CE
f
MHz Ic=500mA,
V =2V,
T
CE
f=50MHz
Output capacitance
Delay time
C
56
15
pF
ns
ns
ns
ns
V
=10V, f=1MHz
obo
CB
t
t
t
t
V
I
=5V, I
=3A,
C
(d)
CC
=I =150mA
Rise time
38.5
213
19.7
B1 B2
(r)
Storage time
Fall time
(stg)
(f)
NOTES:
(*) Measured under pulsed conditions. Pulse width = 300
S. Duty cycle
Յ
2%.
© Zetex Semiconductors plc 2006
ZXTN23015CFH
Typical characteristics
© Zetex Semiconductors plc 2006
ZXTN23015CFH
Package outline – SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
–
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
–
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
–
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
–
–
–
–
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
