Diodes-Incorporated-ZXTN25040DFHTA
| Part # | Diodes-Incorporated-ZXTN25040DFHTA |
| Download | Diodes-Incorporated-ZXTN25040DFHTA |
A Product Line of
Diodes Incorporated
ZXTN25040DFH
40V NPN MEDIUM POWER PLANAR TRANSISTOR IN SOT23
Features and Benefits
Mechanical Data
•
•
•
•
•
•
•
•
•
•
•
•
•
BV
CEO
> 40V
I
C
= 4A Continuous Collector Current
Low Saturation Voltage V
CE(sat)
< 55mV @ 1A
•
•
Case: SOT23
Case material: Molded Plastic. “Green” Molding Compound
(Note 2) UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Matte Tin Finish; Solderable per MIL-STD-202,
Method 208
Weight: 0.008 grams (Approximate)
R
CE(sat)
= 35m
Ω
•
•
h
FE
characterised up to 10A
High h
FE
min 300 @ 1A
1.25W power dissipation
130V forward blocking voltage
•
6V reverse blocking voltage
Complementary part number ZXTP25040DFH
“Lead-Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free. “Green” Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
Applications
•
•
•
MOSFET gate drivers
Power switches
Motor control
•
•
DC fans
DC-DC converters
SOT23
Top View
Device Symbol
Top View
Pin Configuration
Ordering Information
(Note 3)
Product
ZXTN25040DFHTA
Marking
1A4
Reel size (inches)
Tape width (mm)
Quantity per reel
7
8
3,000
Notes:
1. No purposefully added lead.
3. Devices with lot number starting from PID0155145 (March 2010) are “Green” products.
Marking Information
1A4
1A4 = Product Type Marking Code
1 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Maximum Ratings
@T
A
= 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
V
CBO
V
CEX
V
CEO
V
ECO
V
EBO
I
C
Value
130
130
40
6
Unit
V
Collector-Emitter Voltage (Forward Blocking)
Collector-Emitter Voltage
V
V
Emitter-Collector Voltage (Reverse Blocking)
Emitter-Base Voltage
V
7
V
Continuous Collector Current
Peak Pulse Current
Base Current
(Note 6)
4
A
10
1
A
I
CM
A
I
B
Thermal Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
Symbol
Value
0.73
5.84
1.05
8.4
Unit
(Note 4)
(Note 5)
(Note 6)
(Note 7)
P
D
–
W
mW/
°
C
Power Dissipation
Linear Derating Factor
1.25
9.6
1.81
14.5
171
119
100
69
(Note 4)
(Note 5)
(Note 6)
(Note 7)
(Note 8)
Thermal Resistance, Junction to Ambient
R
θ
JA
°
C/W
Thermal Resistance, Junction to Lead
74.95
R
θ
JL
°
C/W
°
C
Operating and Storage Temperature Range
-55 to +150
T
J,
T
STG
Notes:
4. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
5. For a device surface mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
6. For a device surface mounted on 50mm X 50mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. As note 6 above, measured at t < 5 seconds
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
2 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Typical Thermal Characteristics
1m
100µ
10µ
1µ
50
m
mX50mm FR4
2oz Cu
V
CE(sat)
Failure may occur
in this region
Limited
10
BV
(BR)CEO
=40V
1
DC
1s
100ms
100m
10ms
1ms
Single Pulse
T
amb
=25°C
BV
(BR)CEX
=130V
100µs
T
amb
=25°C
20
10m
100m
1
Collector-Emitter Vo
1
lt
0
age (V)
0
40
60
80
120 140
Collector-Emitte
r
1
V
0
o
0
ltage (V)
V
V
CE
CE
Safe Operating Area
Safe Operating Area
100
80
60
40
20
0
T
amb
=25°C
Single Pulse
T
amb
=25°C
100
10
1
50mmX50mm FR4
2oz Cu
50mmX50mm FR4
2oz Cu
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
100µ 1m
10m 100m
1
10
100
1k
100µ 1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
1.4
50mmX50mm FR4
2oz Cu
1.2
1.0
0.8
0.6
0.4
0.2
0.0
25mmX25mm FR4
2oz Cu
15mmX15mm FR4
1oz Cu
0
20
40
80 100
120 140 160
Tem
p
6
0
erature (°C)
Derating Curve
3 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Electrical Characteristics
@T
A
= 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Test Condition
I
C
= 100µA
130
130
170
170
–
–
V
V
BV
CBO
BV
CEX
I
C
= 100µA; R
BE
< 1k
Ω
or
-1V < V
BE
< 0.25V
Collector-emitter breakdown voltage
(forward blocking)
Collector-Emitter Breakdown Voltage
(base open) (Note 9)
Emitter-Base Breakdown Voltage
40
7
63
–
–
V
V
BV
CEO
BV
EBO
BV
ECX
I
C
= 10mA
8.3
I
E
= 100µA
I
E
= 100µA; R
BC
< 1k
Ω
or
-0.25V < V
BC
< 0.25V
Emitter-collector breakdown voltage
(reverse blocking)
6
6
–
7.4
7.4
–
–
V
V
Emitter-collector breakdown voltage
(base open)
BV
ECO
I
CBO
I
E
= 100µA;
V
CB
= 100V
<1
–
50
20
nA
µA
Collector-base Cut-off Current
Collector-emitter Cut-off Current
V
CB
= 100V, T
A
= 100°C
V
CE
= 100V; R
BE
< 1k
Ω
or
-1V < V
BE
< 0.25V
V
EB
= 5.6V
–
–
–
100
50
nA
nA
I
CEX
I
EBO
Emitter-base Cut-off Current
<1
ON CHARACTERISTICS (Note 9)
I
C
= 10mA, V
CE
= 2V
I
C
= 1A, V
CE
= 2V
C
= 4A, V
CE
= 2V
I
C
= 10A, V
CE
= 2V
300
300
30
–
450
450
60
900
–
–
–
Static Forward Current Transfer Ratio
Collector-Emitter Saturation Voltage
–
h
FE
I
10
I
I
C
= 1A, I
B
= 100mA
C
= 1A, I
B
= 10mA
45
55
120
135
140
210
210
190
–
mV
V
CE(sat)
I
C
= 2A, I
B
= 40mA
C
= 4A, I
B
= 400mA
I
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
–
–
960
840
1050
950
mV
mV
V
BE(sat)
V
BE(on)
I
C
= 4A, I
B
= 400mA
I
C
= 4A, V
CE
= 2V
SMALL SIGNAL CHARACTERISTICS (Note 9)
I
C
= 50mA, V
CE
= 10V,
f = 100MHz
Transition Frequency
–
190
–
MHz
f
T
Collector Output Capacitance
Delay time
–
–
–
–
–
11.7
64
20
–
pF
ns
ns
ns
ns
C
obo
t
d
V
CB
= 10V, f = 1MHz
V
CC
= 10V,
I
C
= 1A,
Rise time
108
428
130
–
t
r
Storage time
–
t
s
I
B1
= I
B2
= 10mA
Fall time
–
t
f
Notes:
9. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%
4 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Typical Electrical Characteristics
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
Tamb=25°C
I
C
/I
B
=10
I
C
/I
B
=100
100m
150°C
100°C
25°C
I
C
/I
B
=50
I
C
/I
B
=20
I
C
/I
B
=10
10m
1m
-55°C
10
1m
10m
100m
1
10
10m
100m
1
I
C
Collector Current (A)
I
C
Collector Current (A)
V
CE(SAT)
v I
C
V
CE(SAT)
v I
C
1.2
1.0
0.8
0.6
0.4
825
750
675
600
525
450
375
300
225
150
75
1.6
V
CE
=2V
150°C
I
C
/I
B
=10
-55°C
25°C
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
100°C
25°C
100°C
150°C
-55°C
0
1m
10m
100m
1
10
1m
10m
100m
1
10
I
C
Collector Current (A)
I
C
Collector Current (A)
h
FE
v I
C
V
BE(SAT)
v I
C
V
CE
=2V
-55°C
1.0
0.8
0.6
0.4
0.2
25°C
100°C
150°C
1
1m
10m
100m
10
I
C
Collector Current (A)
V
BE(ON)
v I
C
5 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
Package Outline Dimensions
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
0.075 NOM
Min.
Max.
1.12
0.10
0.50
0.20
3.04
Min.
Max.
Min.
Max.
Min.
A
A1
b
–
–
0.044
0.004
0.020
0.008
0.120
e1
E
1.90 NOM
0.01
0.30
0.085
2.80
0.0004
0.012
0.003
0.110
2.10
1.20
0.25
0.45
–
2.64
1.40
0.60
0.62
–
0.083
0.104
0.055
0.0236
0.024
–
E1
L
0.047
0.0098
0.018
–
c
D
e
L1
–
0.95 NOM
0.037 NOM
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Suggested Pad Layout
0.95
0.037
2.0
0.079
0.9
0.035
mm
inches
0.8
0.031
6 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
A Product Line of
Diodes Incorporated
ZXTN25040DFH
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others.
Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending.
Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated.
Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2012, Diodes Incorporated
7 of 7
January 2012
© Diodes Incorporated
ZXTN25040DFH
Document number: DS33697 Rev. 2 – 2
