Diodes-Incorporated-ZXTN25050DFHTA
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ZXTN25050DFH
50
V
,
S
OT23, NPN medium power transistor
Summary
BV
BV
BV
> 150V
> 50V
> 5V
CEX
CEO
ECO
I
= 4A
C(cont)
V
< 60mV @ 1A
CE(sat)
CE(sat)
R
= 40m
⍀
P =
1.25W
D
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
•
•
High power dissipation SOT23 package
High peak current
High gain
Low saturation voltage
150V forward blocking voltage
5V reverse blocking voltage
E
B
Applications
C
•
•
•
•
•
MOSFET gate drivers
Power switches
Motor control
Pinout – top view
DC fans
DC-DC converters
Ordering information
Device
Reel size
(inches)
T
a
pe width
(mm)
Quantity per
reel
ZXTN25050DFHTA
7
8
3,000
Device marking
017
© Zetex Semiconductors plc 2006
ZXTN25050DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
150
V
CBO
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
V
V
V
V
150
50
5
V
V
V
V
A
A
A
CEX
CEO
ECO
EBO
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
7
(c)
I
I
4
Continuous collector current
C
B
Base current
1
Peak pulse current
I
10
CM
(a)
P
P
P
P
0.73
5.84
W
mW/°C
D
D
D
D
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
amb
amb
amb
amb
(b)
(c)
(d)
1.05
8.4
W
mW/°C
Power dissipation at T
Linear derating factor
1.25
9.6
W
mW/°C
Power dissipation at T
Linear derating factor
1.81
14.5
W
mW/°C
Power dissipation at T
Linear derating factor
Operating and storage temperature range
T , T
– 55 to 150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
R
171
°C/W
⍜
JA
⍜
JA
⍜
JA
⍜
JA
Junction to ambient
(b)
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
(c)
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b
)
M
ounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d
)
A
s (c) above measured at t<5secs.
© Zetex Semiconductors plc 2006
ZXTN25050DFH
Characteristics
© Zetex Semiconductors plc 2006
ZXTN25050DFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Symbol Min.
Typ. Max. Unit
Conditions
Parameter
Collector-base breakdown voltage
BV
150
150
180
180
V
V
I =
100
A
C
CBO
CEX
Collector-emitter breakdown
voltage (forward blocking)
BV
I =
100
A, R
Յ
1k
⍀
or
C BE
-1V < V
< 0.25V
BE
(*)
Collector-emitter breakdown
voltage (base open)
BV
BV
50
5
67
8
V
V
CEO
ECX
I =
10mA
C
Emitter-collector breakdown
voltage (reverse blocking)
I =
100
A, R
Յ
1k
⍀
or
E
BC
> -0.25V
0.25V > V
BC
Emitter-collector breakdown
voltage (base open)
BV
BV
5
7
7.4
8.3
<1
V
V
I =
100
A,
E
ECO
EBO
Emitter-base breakdown
voltage
I =
100
A
E
Collector cut-off current
I
I
I
50
20
nA
A
V
V
= 150V
= 150V, T
CBO
CB
CB
= 100°C
amb
Collector-emitter cut-off
current
–
100
nA
V
= 150V; R
Յ
1k
⍀
or
CE BE
CEX
-1V < V
< 0.25V
BE
Emitter cut-off current
<1
50
50
60
nA
V
= 5.6V
EB
EBO
(*)
Collector-emitter saturation
voltage
V
mV
CE(sat)
I =
1A, I
= 100mA
C
B
(*)
160
180
190
160
970
260
250
mV
mV
mV
mV
mV
I =
1A, I
= 10mA
C
B
(*)
I =
2A, I
= 40mA
C
B
(*)
235
I =
3,5A, I
= 175mA
C
B
(*)
210
I =
4A, I
= 400mA
C
B
(*)
Base-emitter saturation
voltage
V
V
1070
BE(sat)
I =
4A, I
= 400mA
C
B
(*)
Base-emitter turn-on voltage
870
450
410
40
970
900
mV
BE(on)
FE
I =
4A, V
= 2V
C
CE
(*)
Static forward current transfer
h
ratio
300
240
20
I =
10mA, V
= 2V
C
CE
(*)
I =
1A, V
= 2V
C
CE
(*)
I =
4A, V
= 2V
C
CE
Transition frequency
Output capacitance
f
200
MHz I =
50mA, V
= 10V
T
C
CE
f = 100MHz
(*)
C
12
20
pF
OBO
V
V
= 10V, f = 1MHz
CB
CC
Delay time
Rise time
t
t
t
t
65
ns
ns
ns
ns
= 10V. I
= 1A,
C
= I
= 10mA.
B2
(d)
I
B1
111
429
140
(r)
(s)
(f)
Storage time
Fall time
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
© Zetex Semiconductors plc 2006
ZXTN25050DFH
Typical characteristics
© Zetex Semiconductors plc 2006
ZXTN25050DFH
Package outline – SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
–
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
–
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
–
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
–
–
–
–
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Kustermann-park
Balanstraße 59
D-81541 München
Germany
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
