Diodes-Incorporated-ZXTP03200BZTA

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

20

T

Features  

Mechanical Data  

•

•

•

•

•

Case: SOT-89  

•

•

•

•

•

•

•

•

•

•

BV

CEO

> -200V  

BV

ECO

> -2V  

Continuous current I

C(cont)

= 2A  

UL Flammability Rating 94V-0  

Moisture Sensitivity: Level 1 per J-STD-020  

Terminals: Matte Tin Finish  

V

R

Weight: 0.052 grams (approximate)  

P

D

= 2.4W  

2 Amps continuous current  

Up to 5 Amps peak current  

Very low saturation voltage  

Enhanced switching performance  

Applications  

•

DC-DC Convertors  

SOT-89  

Device symbol  

Pin Configuration  

Top View  

Ordering Information  

Product  

ZXTP03200BZTA  

Marking  

1N2  

Reel size (inches)  

Tape width (mm)  

Quantity per reel  

7

12  

1000  

Marking Information  

1N2 = Product type Marking Code  

1 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

Maximum Ratings

 

@T

A

= 25°C unless otherwise specified  

Characteristic  

Collector-Base Voltage  

Symbol  

V

CBO  

V

CEO  

V

EBO  

I

C  

Value  

-220  

-200  

-7  

Unit  

V

Collector-Emitter Voltage  

Emitter-Base Voltage  

V

V

Continuous Collector Current (Note a)  

Base Current  

-2  

A

-1  

A

I

B  

Peak Pulse Current  

-5  

A

I

CM  

Thermal Characteristics  

Characteristic  

Symbol  

Value  

1.1  

8.8  

Unit  

W

mW /

°

C  

W

mW /

°

C  

W

mW /

°

C  

W

Power Dissipation at T

A

= 25

°

C (Note a)  

P

D  

Linear derating factor  

1.8  

14.4  

Power Dissipation at T

A

= 25

°

C (Note b)  

P

D  

P

D  

P

D  

P

D  

Linear derating factor  

2.4  

19.2  

Power Dissipation at T

A

= 25

°

C (Note c)  

Linear derating factor  

4.46  

35.7  

Power Dissipation at T

A

= 25

°

C (Note d)  

mW /

°

C  

W

mW /

°

C  

Linear derating factor  

38.7  

309.6  

Power Dissipation at T

A

= 25

°

C (Note e)  

Linear derating factor  

Junction to Ambient (Note a)  

Junction to Ambient (Note b)  

Junction to Ambient (Note c)  

Junction to Ambient (Note d)  

Junction to Lead (Note e)  

117  

68  

°

C/W  

°

C/W  

°

C/W  

°

C/W  

°

C/W  

°

C  

R

θ  

R

θ  

R

θ  

R

θ  

JA  

JA  

JA  

JA  

51  

28  

3.23  

R

θ  

JL  

Operating and Storage Temperature Range  

-55 to +150  

T

J,

T

STG  

Notes:  

a. For a device surface mounted on 15mm X 15mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions  

b. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions.  

c. Mounted on 25mm X 25mm X 1.6mm FR4 PCB with high coverage of single sided 2 oz copper, in still air conditions.  

d. As (c) above measured at t<5 seconds  

e. Junction to lead from collector Tab. Typical  

2 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

Thermal Characteristics and Derating information  

3 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

Electrical Characteristics

@T

A

= 25°C unless otherwise specified  

Characteristic  

Symbol  

V

(BR)CBO  

V

(BR)CER  

V

(BR)CEO  

V

(BR)EBO  

Min  

-220  

-220  

-220  

-7  

Typ  

-245  

-245  

-225  

-8.4  

<1  

Max  

Unit  

V

Test Condition  

I

C

= -100µA  

Collector-Base Breakdown Voltage  

Collector-Emitter Breakdown Voltage  

Collector-Emitter Breakdown Voltage (Note f)  

Emitter-Base Breakdown Voltage  

V

I

C

= -1µA, R

BE

≤

1k

Ω  

I

C

= -10mA  

V

V

I

E

= -100µA  

V

CB

= -200V  

V

CB

= -200V, T

amb

= 100°C  

V

EB

= -6V  

-50  

-0.5  

nA  

µA  

Collector-Base Cutoff Current  

Emitter Cutoff Current  

I

CBO  

I

EBO  

<1  

-10  

nA  

I

I

100  

100  

20  

195  

179  

50  

300  

Static Forward Current Transfer Ratio

 

(Note f)  

Collector-Emitter Saturation Voltage (Note f)  

h

FE  

I

C

= -2A, V

CE

= -5V  

5

I

I

C

= -100mA, I

B

= -10mA  

I

C

= -500mA, I

B

= -25mA  

-37  

-50  

mV  

mV  

mV  

mV  

-120  

-130  

-160  

-155  

-160  

-260  

V

CE(SAT)  

I

I

C

= -2A, I

B

= -400mA  

I

C

= -2A, I

B

= -400mV  

I

C

= -2A, V

CE

= -5V  

V

CB

= -10V. f = 1MHz  

Base-Emitter Saturation Voltage (Note f)  

Base-Emitter Turn-On Voltage (Note f)  

Output Capacitance (Note f)  

-940  

-840  

31  

-1100  

-1000  

mV  

mV  

pF  

V

BE(sat)  

V

BE(ON)  

C

obo  

V

CE

= -10V, I

C

= -100mA  

f = 50MHz  

Transition Frequency  

105  

MHz  

f

T  

Delay Time  

Rise Time  

Storage Time  

Fall Time  

21  

18  

ns  

ns  

ns  

ns  

t

d  

t

r  

V

680  

75  

T

s  

T

f  

I

B1

= -I

B2

= -100mA  

Notes:  

f. Measured under pulsed conditions. Pulse width = 300 µs. Duty cycle

≤

2%  

4 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

Typical Characteristics  

5 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

Package Outline Dimensions  

Suggested Pad Layout  

6 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2  

A Product Line of  

Diodes Incorporated  

ZXTP03200BZ  

200V PNP LOW V

C

E(sat)

T

RANSISTOR IN SOT-89  

IMPORTANT NOTICE  

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,  

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR  

PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  

changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising  

out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under  

its patent or trademark rights, nor the rights of others.

 

Any Customer or user of this document or products described herein in such  

applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are  

represented on Diodes Incorporated website, harmless against all damages.  

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales  

channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  

indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising  

out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  

Products described herein may be covered by one or more United States, international or foreign patents pending.

 

Product names and  

markings noted herein may also be covered by one or more United States, international or foreign trademarks.  

LIFE SUPPORT  

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the  

express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  

A. Life

 

support devices or systems are devices or systems which:  

1. are

 

intended to implant into the body, or  

2. support

 

or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in  

the labeling can be reasonably expected to result in significant injury to the user.  

B. A

 

critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause  

the failure of the life support device or to affect its safety or effectiveness.  

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems,  

and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their  

products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices-  

or systems-related information or support that may be provided by Diodes Incorporated.

 

Further, Customers must fully indemnify Diodes  

Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life  

support devices or systems.  

Copyright © 2009, Diodes Incorporated  

7 of 7  

August 2009  

© Diodes Incorporated  

ZXTP03200BZ  

Document Number DS31902 Rev. 2 – 2