Diodes-Incorporated-ZXTP2039FTC
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ZXTP2039F
SOT23 80 volt PNP silicon planar medium power
transistor
Summary
V
V
> -80V
> -60V
(BR)CEV
(BR)CEO
I
= -1A
c(cont)
V
< -600mV @ -1A
ce(sat)
Complementary type
ZXTN2038F
Description
This transistor combines high gain, high current operation and low saturation voltage making it
ideal for power MOSFET gate driving and low loss power switching.
Features
■
Low saturation voltage for reduced power dissipation
■
1 to 2 amp high current capability
■
Pb-free
■
SOT23 package
Applications
■
Power MOSFET gate driving
■
Low loss power switching
Ordering information
Pin out – top view
Device
Reel size
7”
T
a
pe width
8mm
Quantity per reel
3,000
ZXTP2039FTA
ZXTP2039FTC
13”
8mm
10,000
Device marking
P39
© Zetex Semiconductors plc 2005
ZXTP2039F
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-80
V
CBO
CEV
CEO
EBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
-80
-60
-5.0
-2
V
V
V
I
I
I
A
CM
*
-1
A
C
Continuous collector current
Peak base current
-1
A
BM
*
P
350
mW
Power dissipation @ T
=25°C
D
A
Operating and storage temperature
T :T
-55 to +150
°C
j
stg
NOTES:
*
For a device surface mounted on a 15mm x 15mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
© Zetex Semiconductors plc 2005
ZXTP2039F
Electrical characteristics (@T
= 25°C)
AMB
Parameter
Symbol
Min.
Max.
Unit
Conditions
I =-100
A
Collector-base breakdown
voltage
V
-80
V
(BR)CBO
C
Collector-emitter breakdown
voltage
V
-80
V
I =-1
A
C
(BR)CEV
-0.3V < V
< 1V
BE
*
Collector-emitter breakdown
voltage
V
V
-60
-5
V
V
(BR)CEO
(BR)EBO
I =-10mA
C
Emitter-base breakdown
voltage
I =-100
µ
A
E
Collector-emitter cut-off current
Collector-base cut-off current
Emitter-base cut-off current
I
-100
-100
-100
nA
nA
nA
V
V
V
=-60V
=-60V
=-4V
CES
CBO
EBO
CE
CB
EB
I
I
Static forward current transfer
ratio
h
100
100
80
I =-1mA,
V =-5V
C CE
FE
*
I =-500mA,
V =-5V
300
C
CE
*
I =-1A,
V =-5V
C
CE
*
I =-2A,
V =-5V
15
C
CE
*
Collector-emitter saturation
voltage
V
-0.2
-0.3
-0.6
V
V
V
CE(sat)
BE(sat)
I =-100mA,
I =-2mA
C
B
*
I =-500mA,
I =-50mA
C
B
*
I =-1A,
I =-100mA
C
B
*
Base-emitter saturation voltage
Base-emitter turn-on voltage
T
r
ansition frequency
V
-1.2
-1.0
V
V
I =-1A,
I =-100mA
C
B
*
V
BE(on)
I =-1A,
V =-5V
C
CE
f
150
I =-50mA,
V =-10V
T
C
CE
f=100MHz
Output capacitance
C
10
pF
V
=-10V, f=1MHz
CB
obo
NOTES:
*
Measured under pulsed conditions. Pulse width=300
S. Duty cycle
Յ
2%
Spice parameter data is available upon request for this device
© Zetex Semiconductors plc 2005
ZXTP2039F
Typical characteristics
0.6
0.5
0.4
0.3
0.2
0.1
0
0.6
+25 ° C
I
C
/I
B
=10
0.5
0.4
0.3
-55 °C
I
C
/I
/I
B
=10
=50
+25 °C
+100 °C
I
C
B
0.2
0.1
0
10mA
100mA
1A
10A
10A
10A
10mA
100mA
1A
10A
1mA
1mA
I
C
-Collector Current
I
C
-Collector Current
V
CE(sat)
v I
C
V
CE(sat)
v I
C
400
300
200
100
0
V
CE
=5V
I
C
/I
B
=10
1.0
0.8
0.6
0.4
0.2
0
+100 °C
+25 °C
-55 °C
-55 °C
+25 °C
+100 °C
1mA
10mA
100mA
1A
10A
1mA
10mA
100mA
1A
I
C
-Collector Current
FE
V I
I
C
-Collector Current
h
C
V
BE(sat)
v I
C
10
1.2
1.0
0.8
0.6
0.4
0.2
0
V
CE
=5V
1
0.1
DC
1s
-55 °C
+25 °C
+100 °C
100ms
10ms
1ms
100us
0.01
1mA
10mA
100mA
1A
0.1V
1V
10V
100V
I
C
-Collector Current
BE(on)
v I
V
CE
– Collector Emitter Voltage (V)
V
C
Safe Operating Area
© Zetex Semiconductors plc 2005
ZXTP2039F
Packaging details – SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Package dimensions
Dimensions in inches are control dimensions, dimensions in millimeters are approximate.
Dim.
Millimeters
Inches
Min.
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
–
Max.
Max.
0.120
0.055
0.043
0.021
Min.
0.33
0.01
2.10
0.45
Max.
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
3.05
1.40
1.10
0.53
0.15
0.105
0.047
–
H
K
L
0.51
0.10
2.50
0.64
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
M
N
–
0.0034 0.0059
0.075 Nom.
0.95 Nom.
0.0375 Nom.
G
1.90 Nom.
–
–
–
–
Europe
Zetex GmbH
Streitfeldstraße 19
D-81673 München
Germany
Americas
Asia Pacific
Corporate Headquarters
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone (44) 161 622 4444
Fax: (44) 161 622 4446
These offices are supported by agents and distributors in major countries world-wide.
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2005
