Diodes-Incorporated-ZXTP23140BFHTA
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ZXTP23140BFH
140V SOT23 PNP medium power transistor
Summary
V
> -160V, V
> -140V
(BR)CEO
(BR)CEX
I
= -2.5A
C(CONT)
R
= 76m
⍀
typical
CE(sat)
V
< -95mV @ -1A
CE(sat)
P =
1.25W
D
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
Higher power dissipation SOT23 package
High peak current
Low saturation voltage
160V forward blocking voltage
Applications
E
B
•
•
•
DC – DC converters
Motor drive
C
High side switches
Pinout – top view
Ordering information
Device
Reel size
(inches)
T
a
pe width
Quantity per reel
ZXTP23140BFHTA
7
8mm
3,000
Device marking
955
© Zetex Semiconductors plc 2006
ZXTP23140BFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
-160
V
CBO
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Peak pulse current
V
-160
-140
-7.0
-5
V
V
V
A
A
A
(BR)CEX
V
V
I
CEO
EBO
CM
(b)
I
I
-2.5
-1
Continuous collector current
C
B
Base current
(a)
P
P
P
P
0.73
5.84
W
D
D
D
D
Power dissipation @ T
=25°C
A
(a)
mW/°C
Linear derating factor
(b)
(c)
(d)
1.05
8.4
W
Power dissipation @ T
=25°C
A
(b)
mW/°C
linear derating factor
1.25
9.6
W
Power dissipation @ T
=25°C
A
(c)
mW/°C
linear derating factor
1.81
14.5
W
Power dissipation @ T
=25°C
A
(d)
mW/°C
linear derating factor
Operating and storage temperature
T :T
-55 to +150
°C
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
R
R
R
171
°C/W
⍜
JA
⍜
JA
⍜
JA
⍜
JA
Junction to ambient
(b)
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
(c)
Junction to ambient
(d)
Junction to ambient
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b
)
M
ounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d
)
A
s (c) above measured at t<5sec.
© Zetex Semiconductors plc 2006
ZXTP23140BFH
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated)
AMB
Parameter
Symbol Min. Typ. Max. Unit
Conditions
Collector-base breakdown
voltage
V
V
-160 -180
-160 -180
V
V
I =-100
A
C
(BR)CBO
(BR)CEX
Collector-emitter breakdown
voltage
I =-100
A,
C
R
Յ
1k
⍀
OR
BE
-0.25V < V
< 1V
BE
(*)
Collector-emitter breakdown
voltage
V
-140 -160
V
V
(BR)CEO
I =-10mA
C
Emitter-base breakdown voltage
V
-7.0
-8.2
–
I =-100
A
E
(BR)EBO
Collector-emitter cut-off
current I
-100
nA V
CE
=-130V;
Յ
1k
⍀
OR
CEX
R
BE
-0.25V < V
< 1V
BE
Collector-base cut-off current
Emitter-base cut-off current
I
I
<1
<1
-20
-10
nA
nA
V
V
=-130V
=-6V
CBO
CB
EB
EBO
(*)
Static forward current transfer
ratio
H
100
100
40
200
FE
I =
-10mA, V
=-5V
C
CE
(*)
180
300
I =-1A,
V =-5V
C
CE
100
-45
Ic=-2.5A, V
=-5V
CE
(*)
Collector-emitter saturation
voltage
V
-55
-95
mV
mV
CE(sat)
I =-100mA,
I =-5mA
C
B
(*)
-80
I =-1A,
I =-100mA
C
B
(*)
(*)
-190 -280
mV
I =-2.5A,
I =-250mA
C
B
Base-emitter saturation voltage
Base-emitter turn-on voltage
T
r
ansition frequency
V
V
-0.89 -1.00
-0.78 -0.90
130
V
V
BE(sat)
I =-2.5A,
I =-250mA
C
B
(*)
BE(on)
I =-2.5A,
V =-5V
C
CE
f
MHz Ic=-100mA,
V =-10
V
,
T
CE
f=50MHz
Output capacitance
T
u
rn–on time
C
30.9
pF
ns
V
=-10
V
,
f
=1MHz
obo
CB
t
132.4
V
=-10
V
, I
=
-2A,
C
(on)
CC
I
=I =-200mA
B1 B2
T
u
rn-off time
t
345.5
ns
(off)
NOTES:
(*) Measured under pulsed conditions. Pulse width=300
S. Duty cycle
Յ
2%.
© Zetex Semiconductors plc 2006
ZXTP23140BFH
Typical characteristics
© Zetex Semiconductors plc 2006
ZXTP23140BFH
Package outline – SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
–
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
–
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
–
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
–
–
–
–
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
700 Veterans Memorial Highway
Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
