Diodes-Incorporated-ZXTP25012EFHTA
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ZXTP25012EFH
12
V
,
S
OT23, PNP medium power transistor
Summary
BV
> -12V
CEO
h
> 500
FE
I
= 4A
C(cont)
R
= 40m
⍀
CE(sat)
V
< -65mV @ 1A
CE(sat)
P =
1.25W
D
Complementary part number ZXTN25012EFH
Description
C
E
Advanced process capability and package design have been used to
maximise the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
Very high gain, 500 minimum
Low saturation voltage
E
B
C
Applications
•
•
•
•
•
MOSFET and IGBT gate driving
DC – DC converters
Motor drive
Pinout – top view
High side driver
Line disconnect switch
Ordering information
Device
Reel size
(inches)
T
a
pe width
(mm)
Quantity
per reel
ZXTP25012EFHTA
7
8
3000
Device marking
1E8
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
-12
V
CBO
CEO
EBO
Collector-emitter voltage
Emitter-base voltage
-12
-7
V
V
(b)
I
-4
A
A
A
W
Continuous collector current
C
Base current
I
-1
B
Peak pulse current
I
-10
0.73
CM
(a)
(b)
(c)
(d)
P
P
P
P
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
D
D
D
D
amb
amb
amb
amb
5.84
1.05
mW/°C
W
8.4
mW/°C
W
1.25
9.6
mW/°C
W
1.81
14.5
mW/°C
°C
Operating and storage temperature range
T , T
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
171
°C/W
Junction to ambient
⍜
JA
(b)
R
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
⍜
JA
(c)
R
Junction to ambient
⍜
JA
(d)
R
Junction to ambient
⍜
JA
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b
)
M
ounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d
)
A
s (c) above measured at t<5secs
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol
BV
Min. Typ. Max. Unit
Conditions
Collector-base breakdown
voltage
-12
-12
-7
-35
-25
-8.5
<-1
V
V
V
I =
-100
A
C
CBO
(*)
Collector-emitter breakdown
BV
voltage (base open)
I =
-10mA
CEO
EBO
C
Emitter-base breakdown
voltage
BV
I =
-100
A
E
Collector-base cut-off
current
I
-50
-0.5
-50
-65
nA
A
nA
mV
V
V
V
= -12V
CBO
CB
CB
EB
= -12V, T
= 100°C
amb
Emitter-base cut-off current
I
<-1
-50
= -5.6V
EBO
(*)
Collector-emitter saturation
voltage
V
I =
-1A, I
= -100mA
CE(sat)
C
B
(*)
(*)
-150
-175
-160
-260
-350
-210
mV
mV
mV
I =
-1A, I
= -10mA
C
B
I =
-2A, I
= -40mA
C
B
(*)
(*)
I =
-4A, I
= -400mA
C
B
Base-emitter saturation
voltage
V
-970 -1050
mV
I =
-4A, I
= -400mA
BE(sat)
C
B
(*)
Base-emitter turn-on voltage
V
-825
800
450
100
310
-950
mV
I =
-4A, V
= -2V
BE(on)
C
CE
(*)
Static forward current
transfer ratio
h
500
300
50
1500
I =
-10mA, V
= -2V
FE
C
CE
(*)
I =
-1A, V
= -2V
C
CE
(*)
I =
-4A, V
= -2V
C
CE
T
r
ansition frequency
Output capacitance
f
MHz I
= -50mA, V
= -10V
T
C
CE
f = 100MHz
(*)
C
16.9
pF
V
V
= -10V, f = 1MHz
= -10V
obo
CB
CC
Delay time
Rise time
t
t
t
t
41
62
ns
ns
ns
ns
d
I =
-1A,
C
r
s
f
I
= I
= -10mA
B2
B1
Storage time
Fall time
179
65
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Typical characteristics
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Package outline – SOT23
E
e
e1
b
3 leads
D
L1
E1
A
L
c
A1
Dim.
Millimeters
Min. Max.
Inches
Dim.
Millimeters
Inches
Max. Max.
0.075 NOM
Min.
–
Max.
0.044
0.004
0.020
0.008
0.120
Min.
Max.
A
A1
b
–
1.12
0.10
0.50
0.120
3.04
e1
E
1.90 NOM
0.01
0.30
0.085
2.80
0.0004
0.012
0.003
0.110
2.10
1.20
0.25
0.45
–
2.64
1.40
0.62
0.62
–
0.083
0.104
0.055
0.024
0.024
–
E1
L
0.047
0.018
0.018
–
C
D
L1
–
e
0.95 NOM
0.0375 NOM
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Intentionally left blank
© Zetex Semiconductors plc 2007
ZXTP25012EFH
Definitions
Product change
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service. Customers are solely responsible for obtaining the latest relevant information before placing orders.
Applications disclaimer
The circuits in this design/application note are offered as design ideas. It is the responsibility of the user to ensure that the circuit is fit for
the user’s application and meets with the user’s requirements. No representation or warranty is given and no liability whatsoever is
assumed by Zetex with respect to the accuracy or use of such information, or infringement of patents or other intellectual property rights
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tort (including negligence), breach of statutory duty, restriction or otherwise) for any damages, loss of profit, business, contract,
opportunity or consequential loss in the use of these circuit applications, under any circumstances.
Life support
Zetex products are specifically not authorized for use as critical components in life support devices or systems without the express written
approval of the Chief Executive Officer of Zetex Semiconductors plc. As used herein:
A. Life
support devices or systems are devices or systems which:
1. are intended to implant into the body
or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A
critical component is any component in a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or to affect its safety or effectiveness.
Reproduction
The product specifications contained in this publication are issued to provide outline information only which (unless agreed by the
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e
rms and Conditions
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To
e
nsure quality of service and products we strongly advise the purchase of parts directly from Zetex Semiconductors or one of our
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of damage can vary from immediate functional or parametric malfunction to degradation of function or performance in use over time.
Devices suspected of being affected should be replaced.
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All Zetex components are compliant with the RoHS directive, and through this it is supporting its customers in their compliance with
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Product status key:
“Preview”
“Active”
Future device intended for production at some point. Samples may be available
Product status recommended for new designs
“Last time buy (LTB)”
Device will be discontinued and last time buy period and delivery is in effect
“Not recommended for new designs”
Device is still in production to support existing designs and production
“Obsolete”
Production has been discontinued
Datasheet status key:
“Draft version”
This term denotes a very early datasheet version and contains highly provisional information, which
may change in any manner without notice.
“Provisional version”
“Issue”
This term denotes a pre-release datasheet. It provides a clear indication of anticipated performance.
However, changes to the test conditions and specifications may occur, at any time and without notice.
This term denotes an issued datasheet containing finalized specifications. However, changes to
specifications may occur, at any time and without notice.
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e
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lephone: (1) 631 360 2222
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© 2007 Published by Zetex Semiconductors plc
© Zetex Semiconductors plc 2007
