Diodes-Incorporated-ZXTP25020DFHTA
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ZXTP25020DFH
20
V
,
S
OT23, PNP medium power transistor
Summary
BV
BV
> -20V
CEO
ECO
> -4V
I
= 4A
C(cont)
V
< 60 mV @ 1A
= 39 m
⍀
CE(sat)
CE(sat)
R
P =
1.25W
D
Complementary part number ZXTN25020DFH
Description
C
E
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
B
Features
•
•
•
•
High power dissipation SOT23 package
High peak current
High gain
Low saturation voltage
E
B
Applications
C
•
•
•
MOSFET gate drivers
Power switches
Motor control
Pinout – top view
Ordering information
Device
Reel size
(inches)
T
a
pe width
(mm)
Quantity per reel
ZXTP25020DFHTA
7
8
3000
Device marking
1A3
© Zetex Semiconductors plc 2006
ZXTP25020DFH
Absolute maximum ratings
Parameter
Symbol
Limit
Unit
Collector-base voltage
V
V
V
V
-25
V
CBO
CEO
ECO
EBO
Collector-emitter voltage (forward blocking)
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
-20
-4
V
V
-7
V
(c)
I
-4
A
A
A
W
Continuous collector current
C
Base current
I
-1
B
Peak pulse current
I
-10
0.73
CM
(a)
P
P
P
P
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
Power dissipation at T
Linear derating factor
=25°C
=25°C
=25°C
=25°C
D
D
D
D
amb
amb
amb
amb
5.84
1.05
mW/°C
W
(b)
(c)
(d)
8.4
mW/°C
W
1.25
9.6
mW/°C
W
1.81
14.5
mW/°C
°C
Operating and storage temperature range
T , T
-55 to 150
j
stg
Thermal resistance
Parameter
Symbol
Limit
Unit
(a)
R
171
°C/W
Junction to ambient
⍜
JA
(b)
R
119
100
69
°C/W
°C/W
°C/W
Junction to ambient
⍜
JA
(c)
R
Junction to ambient
⍜
JA
(d)
R
Junction to ambient
⍜
JA
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b
)
F
or a device surface mounted on 25mm x 25mm x 0.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(c) For a device surface mounted on 50mm x 50mm x 0.6mm FR4 PCB with high coverage of single sided 2oz copper, in
still air conditions.
(d
)
A
s (c) above measured at t<5 seconds.
© Zetex Semiconductors plc 2006
ZXTP25020DFH
Electrical characteristics (at T
= 25°C unless otherwise stated)
amb
Parameter
Symbol Min.
Typ.
Max.
Unit Conditions
Collector-base breakdown
voltage
BV
-25
-20
-7
-55
V
V
V
V
I =
-100
A
C
CBO
CEO
EBO
ECO
(*)
Collector-emitte
r
b
reakdown BV
voltage (base open)
-45
-8.3
-8.5
<-1
I =
-10mA
C
Emitter-base breakdown
voltage
BV
I =
-100
A
E
(*)
Emitter-collector breakdown
BV
voltage (reverse blocking)
-4
I =
-100
A
C
Collector cut-off current
I
-50
-20
-50
-60
nA
A
nA
mV
V
V
V
= -20V
CBO
CB
CB
EB
= -20
V
, T
= 100°C
amb
Emitter cut-off current
I
<-1
-50
= -5.6V
EBO
(*)
Collector-emitter saturation
voltage
V
I =
-1A, I
= -100mA
CE(sat)
C
B
(*)
(*)
-150
-180
-155
-210
-240
-180
mV
mV
mV
mV
I =
-1A, I
= -10mA
C
B
I =
-2A, I
= -40mA
C
B
(*)
(*)
I =
-4A, I
= -400mA
C
B
Base-emitter saturation
voltage
V
V
h
-960 -1050
I =
-4A, I
= -400mA
BE(sat)
BE(on)
C
B
(*)
Base-emitter turn-on
voltage
-815
-900
900
mV
I =
-4A, V
= -2V
C
CE
(*)
Static forward current
transfer ratio
300
200
70
450
310
100
20
I =
-10mA, V
= -2V
FE
C
CE
(*)
I =
-1A, V
= -2V
C
CE
(*)
I =
-4A, V
= -2V
C
CE
(*)
I =
-10A, V
= -2V
C
CE
T
r
ansition frequency
Output capacitance
f
290
MHz I
= -50mA, V
= -10V
T
C
CE
f = 50MHz
(*)
C
21
30
pF
V
V
= -10
V
, f =
1
MHz
OBO
CB
CC
Delay time
Rise time
t
t
t
t
14.2
16.3
186
= -10V. I
= -1A, I
C B1
(d)
= I
= -50mA.
B2
(r)
(s)
(f)
Storage time
Fall time
32.7
NOTES:
(*) Measured under pulsed conditions. Pulse width
Յ
300
s; duty cycle
Յ
2%.
© Zetex Semiconductors plc 2006
ZXTP25020DFH
Typical characteristics
© Zetex Semiconductors plc 2006
ZXTP25020DFH
Package outline – SOT23
L
H
G
N
D
3 leads
A
M
B
C
K
F
Dim.
Millimeters
Inches
Dim.
Millimeters
Inches
Max.
Min.
2.67
1.20
–
Max.
3.05
1.40
1.10
0.53
0.15
Min.
0.105
0.047
–
Max.
0.120
0.055
0.043
0.021
0.0059
Min.
0.33
0.01
2.10
0.45
Max.
0.51
0.10
2.50
0.64
Max.
0.020
0.004
0.0985
0.025
A
B
C
D
F
H
K
L
0.013
0.0004
0.083
0.018
0.37
0.085
0.015
0.0034
M
N
–
0.95 NOM
0.0375 NOM
G
1.90 NOM
0.075 NOM
–
–
–
–
Note:
Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe
Americas
Asia Pacific
Corporate Headquarters
Zetex GmbH
Zetex Inc
Zetex (Asia Ltd)
Zetex Semiconductors plc
Zetex
T
e
chnology Park, Chadderton
Oldham, OL9 9LL
Streitfeldstraße 19
D-81673 München
Germany
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Hauppauge, NY 11788
USA
3701-04 Metroplaza
T
o
wer 1
Hing Fong Road, Kwai Fong
Hong Kong
United Kingdom
T
e
lefon: (49) 89 45 49 49 0
Fax: (49) 89 45 49 49 49
T
e
lephone: (1) 631 360 2222
Fax: (1) 631 360 8222
T
e
lephone: (852) 26100 611
Fax: (852) 24250 494
T
e
lephone: (44) 161 622 4444
Fax: (44) 161 622 4446
This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or
reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned.
The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
© Zetex Semiconductors plc 2006
