-DIOTEC-MMBT3906

MMBT3906  

MMBT3906  

I

C  

= -200 mA  

V

CES

= -40 V  

h

FE

= 100 … 300  

T

jmax

= 150°C  

P

tot

= 250 mW  

SMD General Purpose PNP Transistors  

SMD Universal-PNP-Transistoren  

Version 2018-01-18  

Typical Applications  

Signal processing,  

Typische Anwendungen  

Signalverarbeitung,  

SOT-23  

(TO-236)  

Switching, Amplification  

Commercial grade

)  

Schalten, Verstärken  

Standardausführung

1

)  

+0.1  

-0.2  

2.

9

±0.1  

1.1  

Features  

General Purpose  

Compliant to RoHS, REACH,  

Conflict Minerals

1

)  

Besonderheiten  

Universell anwendbar  

Konform zu RoHS, REACH,  

Konfliktmineralien

1  

0.4

+

–

0

0

.

.

0

1

5  

3

R

Pb  

Type  

Code  

V

Mechanical Data

1

)  

Mechanische Daten

1

)  

1

2

Taped and reeled  

3000 / 7“  

0.01 g  

Gegurtet auf Rolle  

1.9

±0.1  

Weight approx.  

Gewicht ca.  

1 = B  

2 = E  

3 = C  

Case material  

UL 94V-0  

260°C/10s  

MSL = 1  

Gehäusematerial  

Dimensions – Maße [mm]  

Solder & assembly conditions  

Löt- und Einbaubedingungen  

Type  

Code  

Recommended complementary NPN transistors  

Empfohlene komplementäre NPN-Transistoren  

MMBT3906 = 2A or 3E  

MMBT3904  

Maximum ratings

)  

Grenzwerte

2

)  

Collector-Emitter-voltage – Kollektor-Emitter-Spannung  

Collector-Base-voltage – Kollektor-Basis-Spannung  

Emitter-Base-voltage – Emitter-Basis-Spannung  

Power dissipation – Verlustleistung  

B open  

E open  

C open  

– V

CEO  

– V

CBO  

– V

EBO  

P

tot  

40 V  

40 V  

5 V  

250 mW

)  

Collector current – Kollektorstrom  

DC  

– I

C  

200 mA  

Junction temperature – Sperrschichttemperatur  

Storage temperature – Lagerungstemperatur  

T

j  

T

S  

-55…+150°C  

-55…+150°C  

Characteristics  

Kennwerte  

T

j

= 25°C  

Min.  

Typ.  

Max.  

DC current gain – Kollektor-Basis-Stromverhältnis

)  

– V

CE

= 1 V  

– I

C

= 0.1 mA  

– I

C

= 1 mA  

40  

80  

–

–

– I

C

= 10 mA  

– I

C

= 50 mA  

– I

C

= 100 mA  

h

FE  

100  

60  

30  

–

300  

–

–

1

Please note the

or at the beginning of the data book  

Bitte beachten Sie die

bzw. am Anfang des Datenbuches  

T

A

= 25°C, unless otherwise specified – T

A

= 25°C, wenn nicht anders angegeben  

Mounted on P.C. board with 3 mm

2

copper pad at each terminal  

2

3

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss  

4

Tested with pulses t

p

= 300 µs, duty cycle ≤ 2%

 

– Gemessen

 

mit Impulsen t

p

= 300 µs, Schaltverhältnis ≤ 2%  

© Diotec Semiconductor AG  

1

MMBT3906  

Characteristics  

Kennwerte  

Max.  

T

j

= 25°C  

– V

CEsat  

Min.  

Typ.  

Collector-Emitter saturation voltage – Kollektor-Sättigungsdivnung

)  

– I

C

= 10 mA, – I

B

= 1 mA  

– I

C

= 50 mA, – I

B

= 5 mA  

–

–

–

–

0.25 V  

0.4 V  

Base-Emitter saturation voltage – Basis-Sättigungsdivnung

1

)  

– I

C

= 10 mA, – I

B

= 1 mA  

– I

C

= 50 mA, – I

B

= 5 mA  

0.65 V  

–

–

–

0.85 V  

0.95 V  

– V

BEsat  

Collector-Emitter cutoff current – Kollektor-Emitter-Reststrom  

– V

CE

= 30 V, – V

EB

= 3 V  

– I

CEX  

I

EBV  

f

T  

–

–

–-  

–

50 nA  

50 nA  

–

Emitter-Base cutoff current – Emitter-Basis-Reststrom  

– V

CE

= 30 V, – V

EB

= 3 V  

–

Gain-Bandwidth Product – Transitfrequenz  

– I

C

= 10 mA, – V

CE

= 20 V, f = 100 MHz  

Collector-Base Capacitance – Kollektor-Basis-Kapazität  

– V

CB

= 5 V, I

E

= i

e

= 0, f = 1 MHz  

250 MHz  

C

CBO  

–

–

–

4.5 pF  

10 pf  

Emitter-Base Capacitance – Emitter-Basis-Kapazität  

– V

EB

= 0.5 V, I

C

= i

c

= 0, f = 1 MHz  

C

EBO  

–

Switching times – Schaltzeiten (between 10% and 90% levels)  

delay time  

t

d  

t

r  

t

s  

t

f  

–

–

–

–

–

–

–

–

35 ns  

35 ns  

225 ns  

75 ns  

– V

CC

= 3 V, – V

BE

= 0.5 V  

– I

C

= 10 mA, – I

B1

= 1mA  

rise time  

storage time  

– V

CC

= 3 V, – I

C

= 10 mA  

– I

B1

= I

B2

= 1 mA  

fall time  

Thermal resistance junction to ambient  

Wärmewiderstand Sperrschicht – Umgebung  

R

thA  

< 200 K/W

)  

Disclaimer:

See data book page 2 or

Haftungssauschluss:

Siehe Datenbuch Seite 2 oder

1

2

Tested with pulses t

p

= 300 µs, duty cycle ≤ 2%

 

– Gemessen

 

mit Impulsen t

p

= 300 µs, Schaltverhältnis ≤ 2%  

Mounted on P.C. board with 3 mm

2

copper pad at each terminal  

Montage auf Leiterplatte mit 3 mm

2

Kupferbelag (Lötpad) an jedem Anschluss  

2

© Diotec Semiconductor AG