DIYI-Elec-Tech-2N7002KW
| Part # | DIYI-Elec-Tech-2N7002KW |
Download  | DIYI-Elec-Tech-2N7002KW |
2N7002
KW
N-Channel Enhancement Mode Field Effect Transistor
Features
● High density cell design for low RDS
(ON
● Voltage controlled small signal switch.
● Rugged and reliable.
.
）
SOT-
3
23
3
● High saturation current capability.
Mechanical Data
● Case:Molded Plastic,SOT-
3
23 .
1
2
● Epoxy:UL 94V-0 rate flame retardant
● Marking:
72K
.
1. Gate
● Mounting Position : Any.
2. Source
3. Drain
Maximum Ratings
Rating at 25
℃
ambient temperature unless otherwise specified.
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
V
V
GSS
Gate-Source Voltage
±
20
V
340
800
200
Drain Current (Continuous)
Pulsed Drain Current(note1)
T
o
tal power Dissipation
I
D
I
DM
P
D
mA
mA
mW
Thermal Resistance Junction to Ambient Air
R
θJA
625
℃
/W
Operating
T
emperature Range,
Storage
T
emperature Range
T
j
150
℃
℃
T
STG
-55
一
+150
Electrical Characteristics
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source Breakdown Voltage
GateThreshold Voltage
(note 2)
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
V
(BR) DSS
V
GS(th)
I
DSS
V
GS
= 0V, I
D
=250μA
V
DS
=V
GS
, I
D
=1mA
V
DS
=48V,V
GS
= 0V
V
GS
=±20V, V
DS
= 0V
V
GS
=4.5V, I
D
=200mA
V
GS
=10V, I
D
=500mA
60
1
V
V
ꢀꢁꢂ
1
1.3
μA
μA
Ω
I
GSS
±10
3
1.1
0.9
Drain-Source On-Resistance
(note 2)
R
DS(on)
Ω
2.5
DYNAMIC PARAMETERS
(note 3)
Input Capacitance
C
iss
C
oss
C
rss
40
30
10
pF
pF
pF
Output Capacitance
V
DS
=10V,V
GS
=0V,f =1MHz
Reverse Transfer Capacitance
– 1 –
Version 00
2N7002
KW
N-Channel Enhancement Mode Field Effect Transistor
SWITCHING PARAMETERS
(note 3)
Turn-on Delay Time
Turn-off Delay Time
t
d(on)
t
d(off)
10
15
ns
ns
V
GS
=10V,V
DD
=50V, R
G
=50
ȍ
GS
=50
ȍ
, R
L
=250
ȍ
R
V
GS
=0V,I
S
=300mA,V
R
=25V,
dIs/dt=-100A/us
Reverse Recovery Time
Recovered Charge
t
rr
30
30
ns
V
GS
=0V,I
S
=300mA,V
R
=25V
Qr
nC
dIs/dt=-100A/us
GATE-SOURCE ZENER DIODE
Gate-Source Breakdown Voltage
DRAIN-SOURCE DIODE
BV
GSO
Igs=
f
1mA(Open Drain)
I
S
=300mA, V
GS
= 0V
f
21.5
f
30
V
Diode Forward Voltage
(note 2)
Continuous
Diode Forward Current
Pulsed Diode Forward Current(note1)
Notes :
V
SD
I
S
1.5
0.2
V
A
A
I
SM
0.53
1. Repetitive
rating
˖
Pluse width limited by junction temperature.
2. Pulse
T
e
st : Pulse width
300μs, duty cycle
ꢀ
%.
3. Guaranteed
by design, not subject to production testing.
Electrical Characteristics Ta = 25
℃
unless otherwise specified
Output Characteristics
Transfer Characteristics
1.2
0.8
0.4
0.0
1.2
0.8
0.4
0.0
V
DS
=3V
Pulsed
T
a
=25
℃
V
GS
=5V,6V,7V,10V
Pulsed
V
GS
=4V
T
a
=100
℃
T
a
=25
℃
V
GS
=3V
0
1
2
3
4
5
0
2
4
6
8
DRAIN TO SOURCE VOLTAGE
V
DS
(V)
GATE TO SOURCE VOLTAGE
V
GS
(V)
– 2 –
Version 00
2N7002
KW
N-Channel Enhancement Mode Field Effect Transistor
Electrical Characteristics Ta = 25
℃
unless otherwise specified
R
DS(ON)
V
GS
——
R
DS(ON)
I
D
——
5
4
3
2
1
0
10
8
T
a
=25
℃
T
a
=25
℃
Pulsed
Pulsed
I
D
=500mA
6
4
V
GS
=4.5V
2
V
GS
=10V
300
0
0
600
900
1200
1500
0
2
4
6
8
10
DRAIN CURRENT
I
D
(mA)
GATE TO SOURCE VOLTAGE
V
GS
(V)
Threshold Voltage
I
S
——
V
SD
2
1
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Pulsed
0.1
0.01
1E-3
I
D
=250uA
T
a
=100
℃
T
a
=25
℃
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
SOURCE TO DRAIN VOLTAGE
V
SD
(V)
JUNCTION TEMPERATURE
T
j
(
℃
)
– 3 –
Version 00
2N7002
KW
N-Channel Enhancement Mode Field Effect Transistor
SOT-323 Package Outline Dimensions
Dimensions In Millimeters
Dimensions In Inches
Symbol
Min
Max
Min
Max
0.043
0.004
0.039
0.016
0.006
0.087
0.053
0.096
A
A1
A2
b
c
D
E
E1
e
e1
L
0.900
0.000
0.900
0.200
0.080
2.000
1.150
2.150
1.100
0.100
1.000
0.400
0.150
2.200
1.350
2.450
0.035
0.000
0.035
0.008
0.003
0.079
0.045
0.085
0.650 TYP
0.525 REF
0.026 T
Y
P
0.021 REF
1.200
1.400
0.047
0.055
L1
θ
0.260
0°
0.460
8°
0.010
0°
0.018
8°
– 4 –
Version 00
2N7002
KW
N-Channel Enhancement Mode Field Effect Transistor
Important Notice and Disclaimer
● Reproducing and modifying information of the document is prohibited without from XINNUO.
● XINNUO reserves the right to make changes to this document and its products and
specifications.
● XINNUO disclaims any and all liability arising out of the application or use of any product
including damages incidentally and consequentially occurred.
● XINNUO does not assume any and all implied warranties, including warranties of fitness for
particular purpose, non-infringement and merchantability.
●Applications shown on the here in document are examples of standard use and operation.
Customers are responsible in comprehending the suitable use in particular applications.XINNUO
makes no representation or warranty that such applications will be suitable for the specified use
without further testing or modification.
● The products shown her are not designed and authorized for equipments requiring high level of
reliability or relating to human life and for any applications concerning life-saving or life-sustaining,
such as medical instruments, transportation equipment, aerospace machinery et cetera.
Customers using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify XINNUO for any damages resulting from such improper use or sale.
● Since XINNUO uses lot number as the tracking base, please provide the lot number for tracking
when complaining.
–
5
–
Version 00
