Doeshare-2N7002K

2N7002K  

2N7002K  

N-Channel MOSFET  

General description  

N-Channel MOSFET  

FEATURES  

•

•

•

•

•

•

•

Voltage controlled small signal switch  

Rugged and reliable  

P-Channel Switch with Low RDS(on)  

High saturation current capability.  

ESD protected  

Load Switch for Portable Devices  

DC/DC Converter.  

MECHANICAL DATA  

•

•

SOT-23 Small Outline Plastic Package.  

Epoxy UL: 94V-0  

V

(BR)DSS  

60V  

R

DS(ON)MAX  

I

D  

5Ω@10V  

340mA  

5.3Ω@4.5V  

Maximum Ratings & Thermal Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified.)  

Parameters  

Symbol  

V

DS  

Value  

60  

Unit  

V

Drain-Source Voltage  

Gate-Source Voltage  

V

GS  

V

±

20  

340  

350  

150  

Continuous Drain Current  

Power Dissipation  

I

D  

P

D  

T

j  

mA  

mW  

℃

Junction

T

emperature  

Storage

T

emperature  

Tstg  

-50-+150  

357  

℃

Thermal Resistance From Junction to Ambient  

R

θJA  

℃

/W  

Electrical Characteristics

(

Ratings at 25

℃

ambient temperature unless otherwise specified).  

Limits  

Parameter  

Symbols  

V

DS  

Test Condition  

V

GS

=0V, I

D

=250uA  

Unit  

Min  

60  

1

Typ  

Max  

V

Drain-Source Breakdown Voltage  

Gate-Threshold voltage*  

V

th(GS)  

I

GSS1  

V

DS

=V

GS

, I

D

=1mA  

V

DS

=0V, V

GS

=±20V  

V

1.3  

2.5  

±10  

±200  

±100  

1

uA  

I

GSS  

I

GSS  

I

DSS  

V

DS

=0V, V

GS

=±10V  

V

DS

=0V, V

GS

=±5V  

V

DS

=48V, V

GS

=0V  

V

GS

=10V, I

D

=500mA  

V

GS

=4.5V, I

C

=200mA  

I

S

=300mA, V

GS

=0V  

nA  

nA  

uA  

Gate-body Leakage  

Zero Gate Voltage Drain current  

Drain-Source On-Resistance*  

0.9  

1.1  

5

R

DS(ON)  

Ω

V

5.3  

1.50  

40  

V

SD  

Ciss  

Coss  

Crss  

td(on)  

td(off)  

trr  

Diode Forward voltage  

Input capacitance**  

Output capacitance**  

Reverse Transfer capacitance**  

Turn-on Time**  

V

DS

=10V, V

GS

=0V,f=1MHz  

pF  

ns  

30  

10  

V

DD

=50V, R

L

=250Ω, V

GS

=10V,  

R

GS

=50Ω, R

G

=50Ω  

10  

Turn-off Time**  

15  

V

GS

=0V, I

S

=300mA, V

R

=25V,  

Di

s/dt=-100a/uS  

Reverse recovery Time  

30  

ns  

V

±21.5  

±30  

BV

GSO  

Igs=±1mA(Open Drain)  

Gate-Source Breakdown Voltage  

Notes: * Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%.  

** These parameters have on way to verify.  

2N7002K  

Typical characteristics  

2N7002K  

SOT-23 PACKAGE OUTLINE

 

Plastic surface mounted package  

Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  

2N7002K  

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