Doeshare-DN2300
| Part # | Doeshare-DN2300 |
Download  | Doeshare-DN2300 |
DN2300
N-Channel Enhancement MOSFET
General description
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
•
Pb−Free, RoHS Compliant V
DS
=20V
•
I
D
=6A
•
R
DS(ON)
( at V
GS
=4.5V)
＜
18 mΩ
•
R
DS(ON)
( at V
GS
=2.5V)
＜
22 mΩ
•
R
DS(ON)
( at V
GS
=1.8V)
＜
39 mΩ
•
Trench Power LV MOSFET technology
•
High Power and current handing capability
APPLICATIONS
•
PWM application
•
Load switch
Device Marking Code:
Device Type
DN2300
Device Marking
2300 or AE9T
Absolute Maximum Ratings
Parameter
Symbol
V
DS
Limit
Unit
Drain-source Voltage
Gate-source Voltage
20
V
V
V
GS
±
10
T
A
=25
℃
@ Steady State
Drain Current
6
I
D
A
TA=70
℃
@ Steady State
5.4
Pulsed Drain Current
A
I
DM
27
1.2
A
W
T
o
tal Power Dissipation @ T
A
=25
℃
P
D
Thermal Resistance Junction-to-Ambient @ Steady State
B
Junction and Storage
T
emperature Range
R
θ
JA
104
℃
/
W
℃
-55
～
+150
TJ ,TSTG
Page
1
of
5
Electrical Characteristics
Parameter
Symbol
Conditions
Min
Typ
Max Units
Static Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Gate Threshold Voltage
BV
DSS
I
DSS
V
GS
= 0
V
,
I
D
=250μA
V
DS
=20
V
,
V
GS
=0V,T
C
=25
℃
V
GS
=
±
10V, V
DS
=0V
V
DS
= V
GS
, I
D
=250μA
V
GS
= 4.5V, I
D
=6.8A
V
GS
= 2.5V, I
D
=3.0A
V
GS
= 1.8V, I
D
=2.5A
I
S
=6A,V
GS
=0V
20
V
1
±
100
1.0
18
μA
nA
V
I
GSS
V
GS(th)
0.45
0.62
15
Static Drain-Source On-Resistance
Diode Forward Voltage
R
DS(ON)
19
22
mΩ
27
39
V
SD
1.2
6
V
A
Maximum Body-Diode Continuous
Current
I
S
Dynamic Parameters
Input Capacitance
C
iss
C
oss
C
rss
900
165
75
Output Capacitance
Reverse Transfer Capacitance
Switching Parameters
T
o
tal Gate Charge
V
DS
=10
V
,
V
GS
=0V,f=1MHZ
pF
Q
g
Q
gs
Q
gd
t
D(on)
t
r
9.2
1.7
2.9
12
Gate Source Charge
Gate Drain Charge
V
GS
=4.5
V
,
V
DS
=10
V
,
I
D
=6A
nC
Turn-on Delay Time
Turn-on Rise Time
V
GS
=4.5
V
,
V
DD
=10V, R
L
=1.5Ω,
R
GEN
=3Ω
ns
52
Turn-off Delay Time
Turn-off Fall Time
t
D(off)
17
10
t
f
Note :
A. Pulse Test: Pulse Width
≤
300us,Duty cycle
≤
2%.
B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch
Page
2
of
5
Typical Characteristics
Figure1. Output
Characteristics
Figure2. Transfer
Characteristics
Figure3. Capacitance
Characteristics
Figure4. Gate Charge
Figure5. Drain-Source on Resistance
Figure6. Drain-Source on Resistance
Page
3
of
5
Figure7. Safe Operation Area
Figure8. Switching wave
SOT-23 Package
information
SOT-23 Suggested Pad Layout
Page
4
of
5
Important Notice and Disclaimer
DOESHARE has used reasonable care in preparing the information included in this
document, but DOESHARE does not warrant that such information is error free.
DOESHARE assumes no liability whatsoever for any damages incurred by you
resulting from errors in or omissions from the information included herein.
DOESHARE no warranty, representation or guarantee regarding the documents,
circuits and products specification, DOESHARE reservation rights to make changes
for any documents, products, circuits and specifications at any time without notice.
Purchasers are solely responsible for the choice, selection and use of the
DOESHARE products and services described herein, and DOESHARE assumes no
liability whatsoever relating to the choice, selection or use of the products and
services described herein.
No license, express or implied, by implication or otherwise under any intellectual
property rights of DOESHARE.
Resale of DOESHARE products with provisions different from the statements and/or
technical features set forth in this document shall immediately void any warranty
granted by DOESHARE for the DOESHARE product or service described herein and
shall not create or extend in any manner whatsoever, any liability of DOESHARE.
Page
5
of
5
