Doeshare-DN2304

Part #Doeshare-DN2304
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Doeshare-DN2304
DN2304  
N-Channel MOSFET  
General description  
SOT-23 Plastic-Encapsulate Mosfet  
SOT-23  
FEATURES  
•
•
•
Lead free product is acquired  
Surface mount package  
DC/DC Converter  
MECHANICAL DATA  
•
•
•
SOT-23 Small Outline Plastic Package  
Epoxy UL: 94V-0  
Mounting Position: Any  
Marking:S4  
Maximum Ratings & Thermal Characteristics
 
T

A

= 25°C unless otherwise noted  
Parameters  
Symbol  
VDS  
VGS  
ID  
Value  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Continuous Drain Current  
Pulsed Drain Current  
30  
V
±
20  
3.3  
IDM  
IS  
15  
A
Continuous Source-Drain Diode Current  
Power Dissipation  
0.9  
PD  
350  
150  
mW  
℃
Junction Temperature  
Tj  
Storage Temperature  
Tstg  
-50-+150  
357  
℃
Thermal Resistance From Junction to Ambient  
RθJA  
℃
/W  
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DN2304  
Electrical Characteristics  
T

A

= 25°C unless otherwise noted  
Limits  
Typ  
Parameter  
Symbols  
Test Condition  
Unit  
Min  
Max  
Static  
Drain-Source Breakdown Voltage  
Gate-Threshold voltage*  
Gate-body Leakage  
V
(BR)DSS  
V
GS (th)  
I
GSS  
V
GS
=0V, I
D
=250uA  
V
DS
=V
GS
, I
D
=250uA  
V
DS
=0V, V
GS
=±20V  
V
DS
=30V, V
GS
=0V  
V
GS
=10V, I
D
=3.2A  
V
GS
=4.5V, I
C
=2.8A  
V
DS
=4.5V, I
D
=2.5A  
I
S
=2.7A, V
GS
=0V  
Tc=25
℃  
30  
1
V
V
nA  
uA  
1.55  
2.2  
±100  
1
60  
75  
Zero Gate Voltage Drain current  
I
DSS  
37  
57  
R
DS(ON)  
Drain-Source On-Resistance (a)  
mΩ  
Forward trans conductance (a)  
Diode forward voltage  
g
fs  
V
SD  
2.5  
S
V
A
A
0.8  
1.2  
1.4  
15  
Continuous source-drain diode current  
Pulse diode forward current  
Dynamic  
Is  
I
SM  
Input capacitance(b)  
Output capacitance(b)  
Reverse Transfer capacitance(b)  
Ciss  
Coss  
Crss  
235  
45  
17  
4.5  
2.1  
0.85  
0.65  
4.4  
V
DS
=15V, V
GS
=0V,f=1MHz  
V
DS
=15V, V
GS
=10V,I
D
=3.4A  
V
DS
=15V, V
GS
=4.5V,I
D
=3.4A  
F=1.0MHz  
pF  
6.7  
3.2  
Q
g  
Total gate charge  
nC  
Ω
Gate-source charge  
Gate-drain charge  
Gate resistance  
Switching (b)  
Turn-on Time  
Rise time  
Turn-off Time  
Fall time  
Turn-on Time  
Rise time  
Q
gs  
Q
gd  
Rg  
0.8  
8.8  
td(on)  
tr  
td(off)  
tf  
td(on)  
tr  
td(off)  
tf  
12  
50  
12  
22  
5
12  
10  
5
20  
75  
20  
35  
10  
20  
15  
10  
V
DD
=15V, R
L
=5.6Ω,  
V
GEN
=4.5V, I
D
≈2.7A,  
R
G
=1Ω  
ns  
V
DD
=15V, R
L
=5.6Ω,  
V
GEN
=10V, I
D
≈2.7A,  
R
G
=1Ω  
Turn-off Time  
Fall time  
Notes:  
a. Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%.  
b. These parameters have no way to verify.  
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DN2304  
Typical characteristics  
3 / 5  

DN2304  
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package  
Recommended land dimensions for SOT-23 diode. Electrode patterns for PCBs  
4 / 5  

DN2304  
Important Notice and Disclaimer  
DOESHARE has used reasonable care in preparing the information included in this  
document, but DOESHARE does not warrant that such information is error free.  
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resulting from errors in or omissions from the information included herein.  
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circuits and products specification, DOESHARE reservation rights to make changes  
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Purchasers are solely responsible for the choice, selection and use of the  
DOESHARE products and services described herein, and DOESHARE assumes no  
liability whatsoever relating to the choice, selection or use of the products and  
services described herein.  
No license, express or implied, by implication or otherwise under any intellectual  
property rights of DOESHARE.  
Resale of DOESHARE products with provisions different from the statements  
and/or technical features set forth in this document shall immediately void any  
warranty granted by DOESHARE for the DOESHARE product or service described  
herein and shall not create or extend in any manner whatsoever, any liability of  
DOESHARE.  
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